SOT-227
IS OTO P
®
file # E145592
"UL Recognized"
GS
S
D
N-Channel FREDFET
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die FREDFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
V
oz
g
in·lbf
N·m
Ratings
58
37
270
±30
1845
42
Min Typ Max
540
0.23
0.15
-55 150
2500
1.03
29.2
10
1.1
Parameter
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
Terminals and Mounting Screws.
Symbol
ID
IDM
VGS
EAS
IAR
Symbol
PD
RθJC
RθCS
TJ,TSTG
VIsolation
WT
Torque
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
APT58F50J
500V, 58A, 0.065Ω Max, trr ≤320ns
APT58F50J
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in fl yback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
Microsemi Website - http://www.microsemi.com
050-8177 Rev C 9-2011
Static Characteristics TJ = 25°C unless otherwise specifi ed
Dynamic Characteristics TJ = 25°C unless otherwise specifi ed
Source-Drain Diode Characteristics
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 2.08mH, RG = 25Ω, IAS = 42A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is defi ned as a fi xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defi ned as a fi xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
V
DS less than V(BR)DSS, use this equation: Co(er) = -3.14E-7/VDS^2 + 7.31E-8/VDS + 2.09E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
G
D
S
Unit
V
V/°C
Ω
V
mV/°C
μA
nA
Unit
S
pF
nC
ns
Unit
A
V
ns
μC
A
V/ns
Min Typ Max
500
0.60
0.055 0.065
2.5 4 5
-10
250
1000
±100
Min Typ Max
65
13500
185
1455
845
425
340
75
155
60
70
155
50
Min Typ Max
58
270
1.0
290 320
500 600
1.67
4.36
12
17.8
20
Test Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 250μA
VGS = 10V, ID = 42A
VGS = VDS, ID = 2.5mA
V
DS = 500V TJ = 25°C
V
GS = 0V TJ = 125°C
VGS = ±30V
Test Conditions
VDS = 50V, ID = 42A
VGS = 0V, VDS = 25V
f = 1MHz
VGS = 0V, VDS = 0V to 333V
VGS = 0 to 10V, ID = 42A,
VDS = 250V
Resistive Switching
VDD = 333V, ID = 42A
RG = 2.2Ω 6 , VGG = 15V
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
ISD = 42A, TJ = 25°C, VGS = 0V
T
J = 25°C
T
J = 125°C
ISD = 42A 3 T
J = 25°C
diSD/dt = 100A/μs TJ = 125°C
V
DD = 100V TJ = 25°C
T
J = 125°C
ISD ≤ 42A, di/dt ≤1000A/μs, VDD = 333V,
TJ = 125°C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi cient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coeffi cient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
Symbol
VBR(DSS)
∆VBR(DSS)/∆TJ
RDS(on)
VGS(th)
∆VGS(th)/∆TJ
IDSS
IGSS
Symbol
gfs
Ciss
Crss
Coss
Co(cr)
4
Co(er)
5
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Symbol
IS
ISM
VSD
trr
Qrr
Irrm
dv/dt
050-8177 Rev C 9-2011
APT58F50J
VGS= 7,8 & 10V
TJ = 125°C
TJ = 25°C
TJ = -55°C
VGS = 10V
6V
VDS> ID(ON) x RDS(ON) MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
VGS = 10V @ 42A
TJ = 125°C
TJ = 25°C
TJ = -55°C
Coss
Ciss
ID = 42A
VDS = 400V
VDS = 100V
VDS = 250V
TJ = 125°C
TJ = 25°C
TJ = -55°C
TJ = 150°C
TJ = 25°C
TJ = 125°C
TJ = 150°C
Crss
5V
4.5V
V
GS, GATE-TO-SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (A)
I
SD, REVERSE DRAIN CURRENT (A) C, CAPACITANCE (pF) ID, DRAIN CURRENT (A) ID, DRIAN CURRENT (A)
V
DS(ON), DRAIN-TO-SOURCE VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics Figure 2, Output Characteristics
TJ, JUNCTION TEMPERATURE (°C) VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 3, RDS(ON) vs Junction Temperature Figure 4, Transfer Characteristics
ID, DRAIN CURRENT (A) VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 7, Gate Charge vs Gate-to-Source Voltage Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
0 5 10 15 20 25 0 5 10 15 20 25 30
-55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8
0 10 20 30 40 50 60 70 80 90 0 100 200 300 400 500
0 100 200 300 400 500 0 0.3 0.6 0.9 1.2 1.5
350
300
250
200
150
100
50
0
2.5
2.0
1.5
1.0
0.5
0
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
160
140
120
100
80
60
40
20
0
280
240
200
160
120
80
40
0
20,000
10,000
1000
100
10
280
240
200
160
120
80
40
0
APT58F50J
050-8177 Rev C 9-2011
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M 4
(4 places )
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source Drai n
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
t1 = Pulse Duration
1ms
100ms
Rds(on)
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Scaling for Different Case & Junction
Temperatures:
ID = ID(TC = 25°C)*(TJ - TC)/125
DC line
100μs
IDM
10ms
13μs100μs
IDM
100ms
10ms
13μs
Rds(on)
DC line
TJ = 150°C
TC = 25°C
1ms
TJ = 125°C
TC = 75°C
ID, DRAIN CURRENT (A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
ID, DRAIN CURRENT (A)
1 10 100 800 1 10 100 800
0.25
0.20
0.15
0.10
0.05
0
300
100
10
1
0.1
300
100
10
1
0.1
APT58F50J
050-8177 Rev C 9-2011
