© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 500 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C -13 A
IDM TC= 25°C, pulse width limited by TJM - 60 A
IAR TC= 25°C - 20 A
EAS TC= 25°C 2.5 J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 190 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
VISOL 50/60 Hz, RMS t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
MdMounting force 20..120 / 4.5..27 N/lb.
Weight 5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA - 500 V
VGS(th) VDS = VGS, ID = - 250μA - 2.5 - 4.5 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS - 25 μA
VGS = 0V TJ = 125°C - 200 μA
RDS(on) VGS = -10V, ID = -10A, Note 1 490 mΩ
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR20P50P VDSS = - 500V
ID25 = - 13A
RDS(on) ≤≤
≤≤
≤ 490mΩΩ
ΩΩ
Ω
Preliminary Technical Information
G = Gate D = Drain
S = Source
Isolated Tab
ISOPLUS247 (IXTR)
E153432
DS99983(5/08)
Features
zSilicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
zAvalanche rated
zThe rugged PolarPTM process
zLow QG
zLow Drain-to-Tab capacitance
zLow package inductance
- easy to drive and to protect
Applications
zHigh side switching
zPush-pull amplifiers
zDC Choppers
zAutomatic test equipment
zLoad-Switch Application
zFuel Injection Systems
IXTR20P50P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
ISOPLUS247 (IXTR) Outline
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = -10V, ID = -10A, Note 1 11 18 S
Ciss 5120 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 525 pF
Crss 75 pF
td(on) 26 ns
tr 32 ns
td(off) 80 ns
tf 34 ns
Qg(on) 103 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = -10A 28 nC
Qgd 38 nC
RthJC 0.66 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
ISVGS = 0V - 20 A
ISM Repetitive, pulse width limited by TJM - 80 A
VSD IF = -10A, VGS = 0V, Note 1 - 2.8 V
trr 406 ns
QRM 8.93 μC
IRM - 44 A
IF = -10A, -di/dt = -150A/μs
VR = -100V, VGS = 0V
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = -10A
RG = 3Ω (External)
© 2008 IXYS CORPORATION, All rights reserved
IXTR20P50P
Fi g . 1. Ou tp u t C h ar acter isti c s
@ 25ºC
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0-9-8-7-6-5-4-3-2-10
V
DS
- Vo lt s
I
D
- A mpe re s
V
GS
= -10V
- 7V
- 5
V
- 6
V
Fi g . 2. Exten d ed Ou tp u t C h ar acteri sti cs
@ 25º C
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0-30-27-24-21-18-15-12-9-6-30
V
DS
- Vo lts
I
D
- Am peres
V
GS
= - 10V
- 7V
- 6
V
- 5
V
Fig. 3. Output Characteristics
@ 125ºC
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0-18-16-14-12-10-8-6-4-20
V
DS
- Volts
I
D
- Am peres
V
GS
= - 10V
- 7V
- 6
V
- 5
V
Fig. 4. R
DS(on)
Normalized to I
D
= -10A vs.
Junction T emp erature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- No rm a lize d
V
GS
= - 10V
I
D
= - 20
A
I
D
= -10
A
Fig. 5. R
DS(on)
Normalized to I
D
= -10A vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50-45-40-35-30-25-20-15-10-50
I
D
- Amp e res
R
DS(on)
- No rm a lize d
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fig. 6. Maximum Drain Current vs.
Case Temper at u r e
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0-50 -25 0 25 50 75 100 125 150
T
J
- Deg rees Centigrade
I
D
- Am peres
IXTR20P50P
IXYS reserves the right to change limits, test conditions, and dimensions.
Fi g . 7. In p u t Admi ttanc e
-35
-30
-25
-20
-15
-10
-5
0-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Volts
I
D
- Am peres
T
J
= 125ºC
25ºC
- 40ºC
Fig . 8. Transco nductance
0
5
10
15
20
25
30
35
40
-35-30-25-20-15-10-50
I
D
- Amp eres
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Fo r w ar d Vol tage D r op o f
Intrinsic Diode
-60
-50
-40
-30
-20
-10
0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Volts
I
S
- Am peres
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
00 102030405060708090100110
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= - 250V
I
D
= - 10A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - P icoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1.0
10.0
100.0
10 100 1000
VDS - Volts
ID - Am peres
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
----
100ms
-
-
© 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_20P50P(B7) 5-13-08
IXTR20P50P
Fig. 13. Maxim um T ransient Therm al Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
