OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B 03/2012
Page 1 of 3
Miniature Surface Mount
LED—OPR5200
Phototransistor—OPR5500
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Description:
The OPR5200 is a miniature high efficiency GaAIAs light emitting diode in a high temperature polyamide chip
carrier that is well suited to space-limited applications which require close channel spacing.
The OPR5500 is a miniature NPN silicon phototransistor housed in a high temperature polyamide chip carrier that
is well suited to space-limited applications which require close channel spacing.
When combing the OPR5200 and OPR5500 (miniature phototransistor), this lateral mounting option can be used
to create a non-focused reflective or slotted switch configuration.
These parts can be automatically placed with standard SMD equipment and can be reflow soldered by virtually
any conventional means. Wraparound contacts allow it to be mounted face up or on edge for a beam direction
parallel to the seating plane.
See Application Bulletin 237 for handling instructions
Features:
Stackable on 2 mm centers
Vertical or horizontal mounting
Automatic pick-and-place compatible
Combine OPR5200 and OPR5500 to create miniature switch
Applications:
Slotted switches
Industrial environments
Space-limited applications
RoHS
Pin # LED
1 Anode
2 Cathode
3 N.C.
OPR5200
INCHES
[MILLIMETERS]
DIMENSIONS ARE IN:
TOLERANCE IS ± .005 [0.13]
1
2
3
Pin # Transistor
1 Collector
2 Emitter
3 Base
OPR5500
Trans.
NPN
Base
Collector
Emitter
1
2
3
Ordering Information
Part
Number
LED Peak
Wavelength
Output Power
(µW) Min
IF (mA)
Typ / Max
Total Beam
Angle
(Degrees)
Rise / Fall
Times (nS) Typ Packaging
OPR5200 890 nm 350 20 / 50 90 500 / 250 Chip Tray
Part
Number
Sensor
Light Current
IC(ON) (µA) Min VCE
Max Input Power EE
(µW/cm2) Viewing Angle
(Degrees) Packaging
OPR5500 Transistor 36 30 150 120 Chip Tray
Warning: Front
Window is pressure
sensitive. Do not
apply pressure or
high vacuum to
window.
Miniature Surface Mount
LED—OPR5200
Phototransistor—OPR5500
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B 03/2012
Page 2 of 3
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPR5200 Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
PO Output Power 350 - - µW IF = 20 mA
VF Forward Voltage - - 1.8 V IF = 20 mA
IR Reverse Current - - 100 µA VR = 2 V
λP Peak Wavelength - 890 - nm IF = 20 mA
λBW Spectral Bandwidth - 80 - nm IF = 20 mA
θHP Emission Angle - ±45° - - at half power points
tr Output Rise Time - 500 - ns
tf Output Fall Time - 250 - ns
IP = 100 mA, PW = 10.0 µs, D.C. =
10%
OPR5200 Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage and Operating Temperature -55° C to +125° C
Continuous Forward Current 50 mA
Peak Forward Current (1 µs pulse width, 10% duty cycle) 1.0 A
Power Dissipation(1) 100 mW
Solder reflow time within 5°C of peak temperature is 20 to 40 seconds(2) 250° C
Notes:
(1) Derate
at 1.00 mW/° C above 25° C.
(2) Solder time less than 5 seconds at temperature extreme.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B 03/2012
Page 3 of 3
Miniature Surface Mount
LED—OPR5200
Phototransistor—OPR5500
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPR5500 Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
IC(ON) On-State Collector Current 36 - - µA VCE = 5 V, Ee = 150 µW/cm2
(890 nm light source)
ICEO Dark Current - - 100 nA VCE = 5 V, Ee = 0
V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V IC = 100 µA
V(BR)ECO Emitter-CollectorBreakdown Voltage 5 - - V IE = 100 µA
V(SAT) Saturation Voltage - - 0.4 V IC = 100 µA, Ee = 5 mW/cm2
tr, tf Output Rise and Fall Time - 2.5 - µs VCC = 5 V, IC = 800 µA, RL = 100
OPR5500 Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage and Operating Temperature -55° C to +125° C
Collector-Emitter Voltage 30 V
Emitter-Collector Voltage 5 V
Power Dissipation(1) 100 mW
Solder reflow time within 5°C of peak temperature is 20 to 40 seconds(2) 250° C
Notes:
(1) Derate
at 1.00 mW/° C above 25° C.
(2) Solder time less than 5 seconds at temperature extreme.