ATP304-TL-H/BKN - ON Semiconductor

60513 TKIM TC-00002952 No.A2192-1/6

Semiconductor Components Industries, LLC, 2013

June, 2013

http://onsemi.com

ATP304

Features

• On-resistance RDS(on)1=5.0mΩ(typ.) • 4.5V drive

• Input Capacitance Ciss=13000pF(typ.) • Halogen Free compliance

Specifications

Absolute Maximum Ratings at Ta = 25°C

Parameter Symbol Conditions Ratings Unit

Drain to Source Voltage VDSS -60 V

Gate to Source Voltage VGSS ±20 V

Drain Current (DC) ID -100 A

Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% -400 A

Allowable Power Dissipation PD Tc=25°C 90 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg - 55 to +150 °C

Avalanche Energy (Single Pulse) *1 EAS 656 mJ

Avalanche Current *2 IAV -75 A

Note : *1 VDD=-36V, L=100μH, IAV=-75A

*2 L≤100μH, Single pulse

Package Dimensions

unit : mm (typ)

7057-001

P-Channel Power MOSFET

-60V, -100A, 6.5m

Ω

, ATPAK

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

C onditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Ordering & Package Information

Device Package

Shipping note

ATP304-TL-H

ATPAK 3,000

pcs. / reel

Pb-Free

and

Halogen-Free

Packing Type: TL Marking

Electrical Connection

Orderin

numbe

: ENA2192

ATPAK

0.7

0.4

0.55

9.5

7.3 0.5

1.7

4.6

6.05

6.5

0.6

0.8

0.5

1.5

0.4 2.6

4.6

0.4

0.1

2.3 2.3

1: Gate

2: Drain

3: Source

4: Drain

TP304-TL-H

ATP304

LOT No.

2,4

ATP304

No.A2192-2/6

Electrical Characteristics at Ta = 25°C

Parameter Symbol Conditions Ratings Unit

min typ max

Drain to Source Breakdown Voltage V(BR)DSS I

D=-1mA, VGS=0V -60 V

Zero-Gate Voltage Drain Current IDSS V

DS=-60V, VGS=0V -10 μA

Gate to Source Leakage Current IGSS V

GS=±16V, VDS=0V

±10 μA

Cutoff Voltage VGS(off) VDS=-10V, ID=-1mA -1.2 -2.6 V

Forward Transfer Admittance | yfs | VDS=-10V, ID=-50A 100 S

Static Drain to Source On-State

Resistance

RDS(on)1 ID=-50A, VGS=-10V 5.0 6.5 mΩ

RDS(on)2 ID=-50A, VGS=-4.5V 6.4 8.9 mΩ

Input Capacitance Ciss

VDS=-20V, f=1MHz

13000 pF

Output Capacitance Coss 1080 pF

Reverse Transfer Capacitance Crss 760 pF

Turn-ON Delay Time td(on)

See Fig.2

80 ns

Rise Time tr 650 ns

Turn-OFF Delay Time td(off) 780 ns

Fall Time tf 460 ns

Total Gate Charge Qg

VDS=-36V, VGS=-10V, ID=-100A

250 nC

Gate to Source Charge Qgs 55 nC

Gate to Drain “Miller” Charge Qgd 50 nC

Diode Forward Voltage VSD I

S=-100A, VGS=0V -1.0 -1.5 V

Reverse Recoverry Time trr See Fig.3

IS=-100A, VGS= 0V, di/dt=--100A/μs

90 ns

Reverse Recoverry Charge Qrr 245 nC

Fig.1 Unclamped Inductive Switching Test Circuit

Fig.2 Switching Time Test Circuit

Fig.3 Reverse Recovery Time Test Circuit

VDD

ATP304

Driver MOSFET

ATP304

No.A2192-3/6

ATP304

No.A2192-4/6

ATP304

No.A2192-5/6

Outline Drawing Land Pattern Example

ATP304-TL-H

Mass (g) Unit

0.266

* For reference

mm Unit: mm

6.5

6.71.6 2

2.3 2.3

1.5

ATP304

PS No.A2192-6/6

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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual

performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical

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Note on usage : Since the ATP304 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.