SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT (Top View) SRAM MEMORY ARRAY 28-PIN SOJ (ECJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING * Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2 70ns access2 100ns access -12 -15 -20 -25 -35 -45 -55 -70 -1004 * Package(s)3 Ceramic DIP (300 mil) Ceramic DIP (600 mil) Ceramic LCC (28 leads) Ceramic LCC (32 leads) Ceramic Flat Pack Ceramic SOJ C CW EC ECW F ECJ * Operating Temperature Ranges Military -55oC to +125oC Industrial -40oC to +85oC XT IT * 2V data retention/low power L 4 3 2 1 32 31 30 A6 A5 A4 A3 A2 A1 A0 NC DQ1 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A8 A9 A11 NC OE\ A10 CE\ DQ8 DQ7 14 15 16 17 18 19 20 28-Pin LCC (EC) 28-Pin Flat Pack (F) A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS No. 108 No. 110 No. 204 No. 208 No. 302 No. 500 1 2 3 4 5 6 7 8 9 10 11 12 13 14 3 2 1 28 27 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 4 5 6 7 8 9 10 11 12 26 25 24 23 22 21 20 19 18 A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 13 14 15 16 17 GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. The "L" version provides a battery backup/low voltage data retention mode, offering 2mW maximum power dissipation at 2 volts. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. NOTES: 1. -12 and -15 available in IT only. 2. Electrical characteristics identical to those provided for the 45ns access devices. 3. Plastic SOJ (DJ Package) is available on the AS5C2568 datasheet. 4. Available in CW, ECW, and F packages only. For more products and information please visit our web site at www.austinsemiconductor.com MT5C2568 Rev. 1.0 9/99 VCC WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 A7 A12 A14 VCC WE\ Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS double-metal process Single +5V (+10%) Power Supply Easy memory expansion with CE\ All inputs and outputs are TTL compatible 28 27 26 25 24 23 22 21 20 19 18 17 16 15 DQ3 VSS DQ4 DQ5 DQ6 * * * * * * * 1 2 3 4 5 6 7 8 9 10 11 12 13 14 A7 A12 A14 NC VCC WE\ A13 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS *SMD 5962-88662 *MIL-STD-883 32-Pin LCC (ECW) DQ2 DQ3 VSS NC DQ4 DQ5 DQ6 AVAILABLE AS MILITARY SPECIFICATIONS Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 SRAM MT5C2568 Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM A0 Vcc 256 x 1024 MEMORY ARRAY DECODER GND A14 I/O0 I/O DATA CIRCUIT COLUMN I/O I/O7 9A128-1 CE\ CONTROL CIRCUIT OE\ WE\ TRUTH TABLE MODE STANDBY READ READ WRITE MT5C2568 Rev. 1.0 9/99 OE\ X L H X CE\ H L L L WE\ X H H L DQ HIGH-Z Q HIGH-Z D POWER STANDBY ACTIVE ACTIVE ACTIVE Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM MT5C2568 Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage on Any Input or DQ Relative to Vss..................................................................-0.5V to Vcc +0.5V Voltage on Vcc Supply Relative to Vss.......................-1V to +7V Storage Temperature..............................................-65oC to +150oC Power Dissipation.......................................................................1W Short Circuit Output Current.................................................50mA Lead Temperature (soldering 10 seconds)........................+260oC Max. Junction Temperature.................................................+175oC *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC or -40oC to +85oC; VCC = 5.0V +10%) DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current CONDITIONS 0V VIN Vcc Output(s) disabled 0V < VOUT < Vcc IOH = -4.0mA IOL = 8.0mA Output Leakage Current Output High Voltage Output Low Voltage ! " 56 *,, *+7 ,8+9 SYMBOL VIH VIL IL I $ " # " % MIN 2.2 -0.5 -5 MAX Vcc+0.5 0.8 5 UNITS V V A -5 2.4 5 A 0.4 V V ILO VOH VOL NOTES 1 1, 2 1 1 # & '() *+,*+ , ! " # $ " # " % & '() *+,*+ , 56 *,, *+7 +8:; ! +- ,*+ . / " # $ " 01 .23! " # 43 . 23! $ " 01 CAPACITANCE PARAMETER Input Capacitance Input/Output Capacitance MT5C2568 Rev. 1.0 9/99 CONDITIONS SYM MAX UNITS NOTES TA = 25oC, f = 1MHz Vcc = 5V CIN 8 pF 4 CIO 10 pF 4 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 SRAM MT5C2568 Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC or -40oC to +85oC; VCC = 5.0V +10%) DESCRIPTION SYM MIN -12 MAX -15 MIN MAX MIN -20 MAX -25 MIN MAX -35 MIN MAX -45 MIN MAX UNITS NOTES READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Chip Enable to power-up time Chip disable to power-down time Output Enable access time Output Enable to output in Low-Z Output disable to output in High-Z t RC AA t ACE t OH t LZCE t HZCE t PU t PD t AOE t LZOE t HZOE 12 t 15 12 12 2 2 20 15 15 2 2 7 0 2 2 8 0 2 2 0 0 7 14 ns ns ns ns ns ns ns ns ns ns 15 0 35 14 0 10 15 2 2 0 0 ns ns ns ns ns ns ns ns ns ns ns 45 45 14 25 10 8 45 35 35 10 20 8 0 6 2 2 0 15 7 35 25 25 9 0 12 6 25 20 20 45 15 0 14 7 6,7 4 4 6 WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z MT5C2568 Rev. 1.0 9/99 t WC CW t AW t AS t AH t WP t DS t DH t LZWE t HZWE t 12 9 9 0 0 10 7 0 2 0 7 15 10 10 0 0 12 8 0 2 0 7 20 12 12 0 0 15 10 0 2 0 9 25 15 15 0 0 17 12 0 2 0 10 35 17 17 0 0 20 15 0 2 0 13 45 22 22 0 0 25 20 0 2 0 7 6,7 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM MT5C2568 Austin Semiconductor, Inc. +5V AC TEST CONDITIONS Input pulse levels....................................................Vss to 3V Input rise and fall times.....................................................5ns Input timing reference level.............................................1.5V Output reference level......................................................1.5V Output load.................................................See figures 1 & 2 480 4. 5. 6. 480 Q 30 pF 255 Q All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f= 1 Hz. t RC (MIN) This parameter is guaranteed but not tested. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. t HZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured 500mV typical from steady state voltage, allowing for actual tester RC time constant. 5 pF 255 Fig. 2 OUTPUT LOAD EQUIVALENT Fig. 1 OUTPUT LOAD EQUIVALENT NOTES 1. 2. 3. +5V At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. 12. Chip enable (CE\) and write enable (WE\) can initiate and terminate a WRITE cycle. 7. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) DESCRIPTION VCC for Retention Data CONDITIONS CE\ > (VCC - 0.2V) VIN > (VCC - 0.2V) or < 0.2V Data Retention Current SYMBOL VDR ICCDR VCC = 2V MIN 2 VCC = 3V t Chip Deselect to Data Retention Time Operation Recovery Time MAX -1.0 UNITS V mA 2.0 mA 0 CDR NOTES ns 4 ns 4, 11 -t R t RC LOW Vcc DATA RETENTION WAVEFORM DATA RETENTION MODE VCC 4.5V VDR > 2V t t CDR CE\ VIH VIL 123 12345678 12 12345678 12 123 12345678 12 123 12345678 12 123 12345678 12 4.5V R V DR 12345678 1234 123 12345678 1234 123 12345678 1234 123 12345678 1234 123 12345678 123 123 123 123 123 DON'T CARE 1234 1234 1234 1234UNDEFINED MT5C2568 Rev. 1.0 9/99 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 SRAM MT5C2568 Austin Semiconductor, Inc. READ CYCLE NO. 1 8, 9 tRC ADDRESS VALID tAA tOH DQ PREVIOUS DATA VALID DATA VALID READ CYCLE NO. 2 7, 8, 10, 12 tRC CE\ tAOE tHZOE tLZOE OE\ tLZCE tACE tHZCE DQ DATA VALID tPU tPD Icc MT5C2568 Rev. 1.0 9/99 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM MT5C2568 Austin Semiconductor, Inc. WRITE CYCLE NO. 1 12 (Chip Enabled Controlled) tWC ADDRESS tAW tAH tAS tCW CE\ tWP1 WE\ tDS D tDH DATA VAILD Q HIGH Z WRITE CYCLE NO. 2 7, 12 (Write Enabled Controlled) tWC ADDRESS tAW tAH tCW CE\ tAS tWP1 WE\ tDH D DATA VALID Q HIGH-Z NOTE: Output enable (OE\) is inactive (HIGH). MT5C2568 Rev. 1.0 9/99 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 SRAM MT5C2568 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #108 (Package Designator C) SMD 5962-88662, Case Outline N D S2 A Q L E S1 b2 e b eA c SMD SPECIFICATIONS MIN MAX SYMBOL A --0.225 b 0.014 0.026 b2 0.045 0.065 c 0.008 0.018 D --1.485 E 0.240 0.310 eA 0.300 BSC e 0.100 BSC L 0.125 0.200 Q 0.015 0.070 S1 0.005 --S2 0.005 --NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C2568 Rev. 1.0 9/99 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM MT5C2568 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #110 (Package Designator CW) SMD 5962-88662, Case Outline X D S2 A Q L E S1 b2 e b eA c SYMBOL A b b2 c D E eA e L Q S1 S2 SMD SPECIFICATIONS MIN MAX --0.232 0.014 0.026 0.045 0.065 0.008 0.018 --1.490 0.500 0.610 0.600 BSC 0.100 BSC 0.125 0.200 0.015 0.060 0.005 --0.005 --- NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C2568 Rev. 1.0 9/99 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM MT5C2568 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #204 (Package Designator EC) SMD 5962-88662, Case Outline U D1 B2 D2 L1 E3 E e E1 E2 D hx45 o L B1 D3 A A1 SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L1 SMD SPECIFICATIONS MIN MAX 0.060 0.120 0.050 0.088 0.022 0.028 0.072 REF 0.342 0.358 0.200 BSC 0.100 BSC --0.358 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C2568 Rev. 1.0 9/99 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 SRAM MT5C2568 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #208 (Package Designator ECW) SMD 5962-88662, Case Outline Y D1 B2 D2 L1 E3 E e E1 E2 D hx45o L B1 D3 A A1 SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L1 SMD SPECIFICATIONS MIN MAX 0.060 0.120 0.050 0.088 0.022 0.028 0.072 REF 0.442 0.458 0.300 BSC 0.150 BSC --0.458 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C2568 Rev. 1.0 9/99 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 SRAM MT5C2568 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #302 (Package Designator F) SMD 5962-88662, Case Outline T e b D S Top View E L A c Q E2 E3 SYMBOL A b c D E E2 E3 e L Q S SMD SPECIFICATIONS MIN MAX 0.090 0.130 0.015 0.019 0.004 0.009 --0.740 0.380 0.420 0.180 --0.030 --0.050 BSC 0.250 0.370 0.026 0.045 0.000 0.045 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C2568 Rev. 1.0 9/99 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 12 SRAM MT5C2568 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #500 (Package Designator ECJ) A D e D1 B1 E2 b E1 E A2 * All measurements are in inches. MT5C2568 Rev. 1.0 9/99 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 13 SRAM MT5C2568 Austin Semiconductor, Inc. ORDERING INFORMATION EXAMPLE: MT5C2568L CW-25/XT MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 L L L L L L L L L L L L L L L L Package Type C CW C CW C CW C CW C CW C CW C CW C CW MT5C2568 L CW Device Number Options** EXAMPLE: MT5C2568L ECW-15/IT Speed ns Process -12 -12 -15 -15 -20 -20 -25 -25 -35 -35 -45 -45 -55 -55 -70 -70 /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 MT5C2568 L L L L L L L L L L L L L L L L Package Type EC ECW EC ECW EC ECW EC ECW EC ECW EC ECW EC ECW EC ECW -100 /* MT5C2568 L ECW EXAMPLE: MT5C2568F-55/XT Device Number Options** Device Number Options** Speed ns Process -12 -12 -15 -15 -20 -20 -25 -25 -35 -35 -45 -45 -55 -55 -70 -70 /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* -100 /* Package Type Speed ns Process EXAMPLE: MT5C2568L ECJ-70/IT Package Type Speed ns Process Device Number Options** MT5C2568 L F -12 /* MT5C2568 L ECJ -12 MT5C2568 L F -15 /* MT5C2568 L ECJ -15 MT5C2568 L F -20 /* MT5C2568 L ECJ -20 MT5C2568 L F -25 /* MT5C2568 L ECJ -25 MT5C2568 L F -35 /* MT5C2568 L ECJ -35 MT5C2568 L F -45 /* MT5C2568 L ECJ -45 MT5C2568 L F -55 /* MT5C2568 L ECJ -55 MT5C2568 L F -70 /* MT5C2568 L ECJ -70 MT5C2568 L F -100 /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* /* *AVAILABLE PROCESSES IT = Industrial Temperature Range -40oC to +85oC XT = Extended Temperature Range -55oC to +125oC 883C = Full Military Processing -55oC to +125oC 12ns & 15ns offered in IT only **DEFINITION OF OPTIONS 2V Data Retention / Low Power MT5C2568 Rev. 1.0 9/99 L Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 14 SRAM Austin Semiconductor, Inc. MT5C2568 ASI TO DSCC PART NUMBER CROSS REFERENCE* ASI Package Designator C & CW ASI Package Designator EC & ECW ASI Part # MT5C2568C-20/883C MT5C2568C-25/883C MT5C2568C-35/883C MT5C2568C-45/883C MT5C2568C-55/883C MT5C2568C-70/883C SMD Part # 5962-8866207NX 5962-8866206NX 5962-8866205NX 5962-8866204NX 5962-8866203NX 5962-8866202NX ASI Part # MT5C2568EC-20/883C MT5C2568EC-25/883C MT5C2568EC-35/883C MT5C2568EC-45/883C MT5C2568EC-55/883C MT5C2568EC-70/883C SMD Part # 5962-8866207UX 5962-8866206UX 5962-8866205UX 5962-8866204UX 5962-8866203UX 5962-8866202UX MT5C2568CW-20/883C MT5C2568CW-25/883C MT5C2568CW-35/883C MT5C2568CW-45/883C MT5C2568CW-55/883C MT5C2568CW-70/883C MT5C2568CW-100/883C 5962-8866207XX 5962-8866206XX 5962-8866205XX 5962-8866204XX 5962-8866203XX 5962-8866202XX 5962-8866201XX MT5C2568ECW-20/883C MT5C2568ECW-25/883C MT5C2568ECW-35/883C MT5C2568ECW-45/883C MT5C2568ECW-55/883C MT5C2568ECW-70/883C MT5C2568ECW-100/883C 5962-8866207YX 5962-8866206YX 5962-8866205YX 5962-8866204YX 5962-8866203YX 5962-8866202YX 5962-8866201YX ASI Package Designator F ASI Part # MT5C2568F-20/883C MT5C2568F-25/883C MT5C2568F-35/883C MT5C2568F-45/883C MT5C2568F-55/883C MT5C2568F-70/883C MT5C2568F-100/883C SMD Part # 5962-8866207TX 5962-8866206TX 5962-8866205TX 5962-8866204TX 5962-8866203TX 5962-8866202TX 5962-8866201TX * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT5C2568 Rev. 1.0 9/99 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 15