FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ aBo & (T, = 25C) 2 * F tf (T, = 25C) oh RTH BUR iB [Wi] Wooo | Veno | Te | Pe | 1) | Teno MXM YR St A ret TAL Me i | ak nov | Fe] So [ncltena| | ) | CV) | (mA) | (mW) | CCC) THA) | Vea(V)) Vee(V)|fc(mA} Ver(V)Ie(mA)| 476* | (a) [(x10-)| (uo) |} (Me) | @F) | (0) 2 2spee7|H 32] AF. PA Si.T | 60 4a | 2o%] 150 | 100 | 50 | oo | 5 | 500 268 goa] on | | 80 aa | GOW) 150 | 100 | so | 100 | 5 | 500 268 929 |w44#t| PA siTP| 200 | 6 | 5A | POW.1 150 | 1mA} 200 J >700] 4 | 1a 102 4 930 931 [+R] PA siTP] 200 | 6 | 5A |,PO%.) 150 ]1mA | 200 |>700; 4 | 1A 102 932)8 sx) 7 sit | 500 | 7 | 6A |, POM.) 150 | 100 | 500 | 1500} 2 | 4a 332 | 99> be 933} on | on {300 1 7 | 6A |20M.) 150 | 100 | 300 | 1500] 2 | 4a 102 | youre #934, on | | 300 | 7 {| 6A |,SM.) 150 f 100 | 300 | 1500} 2 | 4A 332 | she 935 [#8 F| si.TP] 250 | 7, | 5A | COW] 150 | 1ma| 200 | 100 | 4 | 1A 152 a 936 |# | SW SitMe| 300 | 6 | +304) 400M) 150 | 600 | 300 | >150] 5 | 30a Belipas 7? bes 319 937, | on | 400 | 6 | 304) 400W ) 50 | 6oo | 400 | >250) 5 | 30a el lS vm? Ks 319 n93gf | on | 600 | 6 | +300) 400W 1 150 | 600 | 600 | >150} 5 | 30A fe IR 12 5S 319 939} 7 | on | 300 | 6 | +494] 2001 i150 | 800 | 300 J >150| 5 | 40a ins AS NO? BS 319 #940; | om | 400 | 6 | +494) 400W | iso | goo | 400 | >150/ 5 | 40a y U2 Sus 319 oor] on | on | 600 | 6 | +4? |.400W | 150 | goo | soo J >150] 5 | 40a p 42 BAS 319 v2} | | 300 | 6 | +594 | S00W | 359 [ama | 300 | >150; 5 | 50A , 2 bus 319 y9aBfon [on | 400 | 6 [+894] 400W.) iso [ima | 400 [>150/ 5 | 50a feos La m2 bus 319 944 9 945 946 | TF] AF SiEP| 30 5 | 1A |12w] 150 ] 0.1 | 25 1790855; 10 | 1A 236 | #-v by #947 n 948 [ts F| SW SiTMe| 1600} 5 | 1A | 28%.) 130 | 10 | 750 | 4 5 | 1A bte< 12S, t7<1.2uS 153 | AF wg4ag] on | on {1500 | 5 | 2A | f8%) 130 | 50 | 750 | 4 5 | 2A tare <13US, /<1.248 102 | FR "950 9 | # | 1500} 5 | fen, | A2W. | 130 3~10 102 | 72-5 "91pm | om | 1500} 5 |r, | 658.) 130 4~15 U<0.948 102 | > i gpa) | | 1500 | 5 | 7a, | 7OW.) 130 4~12 <0.94S 102 | > - pil #953) | # | 1500] 5 | 47, | 28.) 130 3~8 ts < 0.848 102 | 7> sie 7 ie | 1500} 5 | 5A [25%] 130 | 50 | 750 | 7 | 10 | 4A tereS16 HS, <1 4S 102 [RFE #955\H u:) AF SiE | 120] 5 | 50 | 625 | 150 | 10 | 120 } 120] 5 | 10 | 138D 956| | Sw sit | 1500] 6 | 2.5a [20%] 150 | ees | 1500 y<1us 102 [AFB