IRFD110,111 OWMER MOS [FET Lps2B2;k2 FIELD EFFECT POWER TRANSISTOR 100, 60 VOLTS RDS(ON) = 0.6 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- D ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power 5 supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear CASE STYLE 4-PIN DIP transfer characteristics makes it well suited for many linear DIMENSIONS ARE IN INCHES AND (MILLIMETERS) applications such as audio amplifiers and servo motors. Features prawn jf Pe Polysilicon gate Improved stability and reliability e No secondary breakdown Excellent ruggedness ee 2 4 e Ultra-fast switching Independent of temperature to = e Voltage controlled High transconductance Tr pap e Low input capacitance Reduced drive requirement ove tyea ke 3m 0.15 (3.81) Excellent thermal stability Ease of paralleling Fe fore maximum ratings (T, = 25C) (unless otherwise specified) RATING SYMBOL IRFD110/D82BL2 | IRFD111/D82BK2 UNITS Drain-Source Voltage Vpss 100 60 Volts Drain-Gate Voltage, Ras = 1MO. Voar 100 60 Volts Continuous Drain Current @ Ta = 25C ID 1.0 1.0 A @ Ta = 100C" 0.63 0.63 A Pulsed Drain Current lpm 8.0 8.0 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Ta = 25C Pp 1.2 1.2 Watts Derate Above 25C 9.6 9.6 mW/C Operating and Storage Junction Temperature Range Ty, TstG ~55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Ambient Raa 105 105 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds TL 300 300 C (1) Device mounted to vertical pc board in free air with drain lead soldered to 0.20 in? minimum copper run area. (2) Repetitive Rating: Pulse width limited by max. junction temperature. 233electrical characteristics (T, = 25C) (unless otherwise specified) |. CHARACTERISTIC | SYMBOL | MIN | TYP MAX UNIT | off characteristics Drain-Source Breakdown Voltage IRFD110/D82BL2 BVpss 100 _ Volts (Vgg = OV, Ip = 250 WA) IRFD111/D82BK2 60 Zero Gate Voltage Drain Current Ipss (Vpg = Max Rating, V@g = OV, Ta = 25C) _ 250 HA (Vps = Max Rating, x 0.8, Vgg = OV, Ta = 125C) 1000 te-S Leakage Current . Ga Von vy ge Curren lass _ _ +500 nA on characteristics" Gate Threshold Voltage Ta = 25C | Vaqs(TH) 2.0 _ 4.0 Voits (Vos = Ves, Ip = 250 uA) On-State Drain Current i 1.0 _ _ A (V@s = 10V, Vpg = 10V) D(ON) Static Drain-Source On-State Resistance (Vas = 10V, Ip = 0.8A) Rps(ON) _ 0.5 0.6 Ohms Forward Transconductance _ (Vpg = 10V, Ip = 0.8A) Ofs 0.56 0.75 mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ 145 200 pF Output Capacitance Vps = 25V Coss _ 65 100 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 20 25 pF switching characteristics* Turn-on Delay Time Vos = 30V ta(on) _ 15 _ ns Rise Time Ip = 0.8A, Vag = 15V ty _ 15 ns Turn-off Delay Time Raen = 500, Reg = 12.659 ta (off) _ 30 _ ns Fall Time (Ras (Equiv.) = 109) tt _ 10 ns source-drain diode ratings and characteristics Continuous Source Current Is 1.0 A Pulsed Source Current Iso _ _ 8.0 A Diode Forward Voltage _ 0.9 25 Vol (Ta = 25C, Vag = OV, Is = 1.0A) Vsp olts Reverse Recovery Time ter _ 90 _ ns (Ig = 1.0A, dig/dt = 100A/us, Ta = 125C) Qrar 0.2 _ uC *Pulse Test: Pulse width < 300 us, duty cycle < 2% 18y8 100us ims 10ms 100ms Ip. DRAIN CURRENT (AMPERES) OPERATION IN THIS AREA MAY BE LIMITED BY Rogion) ' 1 SINGLE PULSE Ta 25C Dc 1.0 10.0 Vpg, ORAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 2.4 2.2 CONDITIONS: Rps(on) CONDITIONS: ip = 08 A, Vag = 10V V@g(TH) CONDITIONS: Ip = 250KA, Vpg = Vag 2.0 1.8 Rosion) 1.6 1.4 1.2 1.0 0.8 VesctH) 06 Rosion) AND Vege) NORMALIZED 10/D62BL2 11/DE23K2 0.4 0.2 0 40 80 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogion AND Vosiru) VS- TEMP. -40 0 120 160 234