Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
SCOTTSDALE DIVISION
1N6511
WWW.Microsemi .COM 1N6511
DESCRIPTION APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
by a planar process and mounted in a 14-PIN ceramic DIP package for use as
steering diodes protecting up to seven I/O ports from ESD, EFT, or surge by directing
them either to the positive side of the power supply line or to ground (see Figure 1).
An external TVS diode may be added between the positive supply line and ground to
prevent overvoltage on the supply rail. They may also be used in fast switching core-
driver applications. This includes computers and peripheral equipment such as
magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or
encoding applications. These arrays offer many advantages of integrated circuits such
as high-density packaging and improved reliability. This is a result of fewer pick and
place operations, smaller footprint, smaller weight, and elimination of various discrete
packages that may not be as user friendly in PC board mounting.
14-PIN Ceramic DIP
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLICATIONS / BENEFITS
• Hermetic Ceramic Package
• Isolated Diodes to Eliminate Cross-Talk Voltages
• High Breakdown Voltage VBR > 75 V at 5 µA
• Low Leakage IR< 100nA at 40 V
• Low Capacitance C < 4.0 pF
• Switching Speeds less than 10 ns
• Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N6511 for a JANTX screen.
• High Frequency Data Lines
• RS-232 & RS-422 Interface Networks
• Ethernet: 10 Base T
• Computer I/O Ports
• LAN
• Switching Core Drivers
• IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20 µs
MAXIMUM RATINGS MECHANICAL AND PACKAGING
• Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)
• Continuous Forward Current of 300 mA dc (Note 1 & 3)
• Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
• 400 mW Power Dissipation per Junction @ 25oC
• 600 mW Power Dissipation per Package @ 25oC (Note 4)
• Operating Junction Temperature range –65 to +150oC
• Storage Temperature range of –65 to +200oC
• 14-PIN Ceramic DIP
• Weight 2.05 grams (approximate)
• Marking: Logo, part number, date code
• Pin #1 to the left of the indent on top of package
• Carrier Tubes; 25 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/oC above +25oC
NOTE 4: Derate at 4.8 mW/oC above +25oC
.
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
VF1
IF = 100 mA
(Note 1)
MAXIMUM
REVERSE
CURRENT
IR1
VR = 40 V
MAXIMUM
REVERSE
CURRENT
IR2
VR = 20 V
MAXIMUM
CAPACITANCE
(PIN TO PIN)
Ct
VR = 0 V
F = 1 MHz
MAXIMUM
FORWARD
RECOVERY
TIME
tfr
IF = 100 mA
MAXIMUM
REVERSE
RECOVERY TIME
trr
IF = IR = 10 mAdc
irr = 1 mAdc
RL = 100 ohms
MAXIMUM
FORWARD
VOLTAGE
MATCH
VF5
IF = 10 mA
PART
NUMBER V µA nA pF ns ns mV
1N6511 1 0.1 25 4.0 15 10 5
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright 2003
5-03-2004 REV A
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright 2003
5-03-2004 REV A
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6511
1N6511 6511
SYMBOLS & DEFINITIONS
Symbol DEFINITION
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Ct Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
SCHEMATIC PACKAGE DIMENSIONS
CIRCUIT
Supply rail (+VCC)
GND (or -VCC)
Steering Diode Application
FIGURE 1
I/O Port
