S S D D G G 27 2 T- SO APT8018JN S 800V 0.18 40A "UL Recognized" File No. E145592 (S) ISOTOP(R) POWER MOS IV (R) SINGLE DIE ISOTOP(R) PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage UNIT 800 Volts 40 Continuous Drain Current @ TC = 25C 1 APT 8018JN Amps IDM, lLM Pulsed Drain Current VGS Gate-Source Voltage 30 Volts Total Power Dissipation @ TC = 25C 690 Watts Linear Derating Factor 5.52 W/C PD TJ,TSTG TL 160 and Inductive Current Clamped -55 to 150 Operating and Storage Junction Temperature Range C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number APT8018JN Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 A) On State Drain Current MIN TYP MAX 800 Volts 2 APT8018JN 40 Amps (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance UNIT 2 0.18 APT8018JN Ohms (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts MAX UNIT Gate Threshold Voltage (VDS = VGS, I D = 5.0mA) 2 THERMAL CHARACTERISTICS Characteristic MIN RJC Junction to Case RCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) TYP 0.18 0.05 C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 050-8038 Rev E Symbol APT8018JN DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 11715 14000 Coss Output Capacitance VDS = 25V 1430 2000 Crss Reverse Transfer Capacitance f = 1 MHz 460 690 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) VGS = 10V 468 700 VDD = 0.5 VDSS 72 110 ID = ID [Cont.] @ 25C 176 265 3 VGS = 15V 21 40 VDD = 0.5 VDSS 19 40 ID = ID [Cont.] @ 25C 70 105 RG = 0.6 13 25 TYP MAX Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions Continuous Source Current (Body Diode) IS MIN APT8018JN 40 APT8018JN 160 UNIT Amps ISM Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) 945 1800 ns Q rr Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s) 36 60 C TYP MAX UNIT (VGS = 0V, IS = -ID [Cont.]) 1.8 Volts PACKAGE CHARACTERISTICS Symbol Characteristic / Test Conditions MIN LD Internal Drain Inductance (Measured From Drain Terminal to Center of Die.) 3 LS Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) 5 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) CIsolation Drain-to-Mounting Base Capacitance (f = 1MHz) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. nH 2500 Volts 70 pF 13 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.1 D=0.5 0.05 0.2 0.1 0.01 0.005 0.05 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-8038 Rev E 0.2 0.01 t1 t2 0.001 0.0005 10-5 SINGLE PULSE 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION in-lbs APT8018JN 100 100 80 5.5V 60 5V 40 4.5V 20 ID, DRAIN CURRENT (AMPERES) VGS=10 & 15V 8V 5.5V 60 5V 40 4.5V 20 4V 4V 0 0 TJ = +125C 80 60 40 TJ = +125C 20 TJ = +25C TJ = -55C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) 40 30 20 10 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE TJ = +25C 3.5 1.2 TJ = 25C 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE NORMALIZED TO V = 10V @ 0.5 I [Cont.] 3.0 GS D 2.5 VGS=10V 2.0 1.5 VGS=20V 1.0 0.5 0 40 80 120 160 200 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) TJ = -55C 0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 6V 80 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-8038 Rev E ID, DRAIN CURRENT (AMPERES) VGS=6, 8, 10 & 15V APT8018JN OPERATION HERE LIMITED BY RDS (ON) 50 1mS 10 5 10mS 1 100mS DC TC =+25C TJ =+150C SINGLE PULSE .5 .1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1 5 10 50 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 I = I [Cont.] D VDS=80V D VDS=160V 16 Ciss 100S VDS=400V 12 8 4 0 200 400 600 800 1000 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE C, CAPACITANCE (pF) 100 0 50,000 10S 10,000 5,000 Coss Crss 1,000 500 100 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 200 400 100 TJ =+150C TJ =+25C 50 TJ =-55C 10 5 1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE APT Reserves the right to change, without notice, the specifications and information contained herein. SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) Hex Nut M4 (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) * Source * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) 050-8038 Rev E * Source Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. Drain Gate