1. Product profile
1.1 General description
NPN Resistor-Equipped Transistors (RET) family.
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 04 — 16 November 2009 Product data sheet
Table 1. Product overview
Type number Package PNP complement
NXP JEITA JEDEC
PDTC123YE SOT416 SC-75 - PDTA123YE
PDTC123YK SOT346 SC-59A TO-236 PDTA123YK
PDTC123YM SOT883 SC-101 - PDTA123YM
PDTC123YS[1] SOT54 SC-43A TO-92 PDTA123YS
PDTC123YT SOT23 - TO-236AB PDTA123YT
PDTC123YU SOT323 SC-70 - PDTA123YU
Built-in bias resistors Reduces component count
Simplifies circuit design Reduces pick and place costs
General-purpose switching and
amplification
Circuit drivers
Inverter and interface circuits
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 50 V
IOoutput current (DC) - - 100 mA
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 3.6 4.5 5.5
PDTC123Y_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 16 November 2009 2 of 11
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
SOT54
1 input (base)
2 output (collector)
3 GND (emitter)
SOT54A
1 input (base)
2 output (collector)
3 GND (emitter)
SOT54 varia nt
1 input (base)
2 output (collector)
3 GND (emitter)
SOT23; SOT323; SOT346; SOT416
1 input (base)
2 GND (emitter)
3 output (collector)
SOT883
1 input (base)
2 GND (emitter)
3 output (collector)
001aab34
7
1
2
3
006aaa145
2
3
1
R1
R2
001aab34
8
1
2
3
006aaa145
2
3
1
R1
R2
001aab44
7
1
2
3
006aaa145
2
3
1
R1
R2
006aaa14
4
12
3
sym007
3
2
1
R1
R2
3
1
2
Transparent
top view
sym007
3
2
1
R1
R2
PDTC123Y_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 16 November 2009 3 of 11
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
3. Ordering information
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4. Orderin g i nformation
Type number Package
Name Description Version
PDTC123YE SC-75 plastic surface mounted package; 3 leads SOT416
PDTC123YK SC-59A plastic surface mounted package; 3 leads SOT346
PDTC123YM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 ×0.6 ×0.5 mm SOT883
PDTC123YS[1] SC-43A plastic single -ended leaded (through hole) package;
3 leads SOT54
PDTC123YT - plastic surface mounted package; 3 le ads SOT23
PDTC123YU SC-70 plastic surface mounted package; 3 leads SOT323
Table 5. Marking codes
Type number Marking code[1]
PDTC123YE 19
PDTC123YK 31
PDTC123YM G7
PDTC123YS TC123Y
PDTC123YT *AL
PDTC123YU *19
PDTC123Y_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 16 November 2009 4 of 11
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5 V
VIinput voltage
positive - +12 V
negative - 5V
IOoutput current (DC) - 100 mA
ICM peak collector current single pulse;
tp1ms -100mA
Ptot total power dissipation Tamb 25 °C
SOT416 [1] -150mW
SOT346 [1] -250mW
SOT883 [2][3] -250mW
SOT54 [1] -500mW
SOT23 [1] -250mW
SOT323 [1] -200mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air
SOT416 [1] --833K/W
SOT346 [1] --500K/W
SOT883 [2][3] --500K/W
SOT54 [1] --250K/W
SOT23 [1] --500K/W
SOT323 [1] --625K/W
PDTC123Y_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 16 November 2009 5 of 11
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
7. Characteristics
Table 8. Characteristics
Tamb =25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =50V; I
E= 0 A - - 100 nA
ICEO collector-emitter
cut-off current VCE =30V; I
B=0A - - 1 μA
VCE =30V; I
B=0A;
Tj=150°C--50μA
IEBO emitter-base cut-off
current VEB =5V; I
C= 0 A - - 700 μA
hFE DC current gain VCE =5V; I
C=5mA 35 - -
VCEsat collector-emitter
saturation voltage IC=10 mA; IB= 0.5 mA - - 150 mV
VI(off) off-state input voltage VCE =5V; I
C=100μA - 0.75 0.3 V
VI(on) on-state input voltage VCE = 300 mV; IC= 20 mA 2.5 1.15 - V
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 3.6 4.5 5.5
Cccollector capacit ance VCB =10V; I
E=i
e=0A;
f=1MHz --2pF
PDTC123Y_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 16 November 2009 6 of 11
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 40 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 40 °C
Fig 1. DC current gain as a function of collector
current; typical values Fig 2. Collector- em itter saturation voltage as a
function of collector current; typical values
VCE = 0.3 V
(1) Tamb = 40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
VCE = 5 V
(1) Tamb = 40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values Fig 4. Off-state input voltage as a function of
collector current; typical values
IC (mA)
101102
101
006aaa095
102
10
103
hFE
1
(1)
(2)
(3)
IC (mA)
110
2
10
006aaa096
101
1
VCEsat
(V)
102
(1)
(3)
(2)
006aaa097
IC (mA)
101102
101
1
10
VI(on)
(V)
101
(1)
(3)
(2)
IC (mA)
101101
006aaa098
1
10
VI(off)
(V)
101
(1)
(2)
(3)
PDTC123Y_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 16 November 2009 7 of 11
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
8. Package outline
Fig 5. Pac kage outline SOT416 (SC-75) Fig 6. Pa ckage outline SOT346 (SC-59A/TO-236)
Fig 7. Package outline SOT883 (SC-101) Fig 8. Package outline SOT54 (SC-43A/TO-92)
Fig 9. Pac kage outline SOT54A Fig 10. Package outline SOT54 variant
04-11-04Dimensions in mm
0.95
0.60
1.8
1.4
1.75
1.45
0.9
0.7
0.25
0.10
1
0.30
0.15
12
30.45
0.15
04-11-11Dimensions in mm
3.0
2.5
1.7
1.3
0.26
0.10
12
3
1.9
0.50
0.35
1.3
1.0
3.1
2.7
0.6
0.2
03-04-03Dimensions in mm
0.62
0.55
0.55
0.47
0.50
0.46
0.65
0.20
0.12
3
21
0.30
0.22
0.30
0.22
1.02
0.95
0.35
04-11-16Dimensions in mm
5.2
5.0
14.5
12.7
4.8
4.4
4.2
3.6
0.45
0.38
0.48
0.40
1.27
2.54
3
2
1
04-06-28Dimensions in mm
5.2
5.0
14.5
12.7
4.8
4.4
4.2
3.6
0.45
0.38
0.48
0.40
2.54
5.08
3 max
3
2
1
05-01-10Dimensions in mm
5.2
5.0
14.5
12.7
4.8
4.4
4.2
3.6
0.45
0.38
0.48
0.40
1.27
1.27
2.54
2.5
max
3
2
1
PDTC123Y_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 16 November 2009 8 of 11
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
9. Packing information
[1] For further information and the availability of packing methods, see Section 12.
Fig 11. Package outline SOT23 (TO-236AB) Fig 12. Package outline SOT323 (SC-70)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
04-11-04Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0
1.35
1.15
1.3
0.4
0.3
0.25
0.10
12
3
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 5000 10000
PDTC123YE SOT416 4 mm pitch, 8 mm tape and reel -115 - -135
PDTC123YK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135
PDTC123YM SOT883 2 mm pitch, 8 mm tape and reel - - -315
PDTC123YS SOT54 bulk, straight leads - -412 -
SOT54A tape and reel, wide pitch - - -116
tape ammopack, wide pitch - - -126
SOT54 variant bulk, delta pinning - -112 -
PDTC123YT SOT23 4 mm pitch, 8 mm tape and reel -215 - -235
PDTC123YU SOT323 4 mm pitch, 8 mm tape and reel -115 - -135
PDTC123Y_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 16 November 2009 9 of 11
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
10. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTC123Y_SER_4 20091116 Product data sheet - PDTC123Y_SER_3
Modifications: This data sheet was changed to reflec t the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
PDTC123Y_SER_3 20050324 Product data sheet - PDTC123YT_2
PDTC123YT_2 200 40510 Objective data sheet - PDTC123YT_1
PDTC123YT_1 200 40406 Objective data sheet - -
PDTC123Y_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 16 November 2009 10 of 11
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warrant ies as to t he accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short dat a sheet is an extract from a full dat a sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
11.3 Disclaimers
General — In formation in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any repr esentatio ns or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ra tings System of IEC 60134) may cause permane nt
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — NXP Semiconductors product s are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Not hing in this document may be interpret ed or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respective ow ners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of rele ase: 16 November 2009
Document identifier: PDTC123Y_SER_4
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Packing information . . . . . . . . . . . . . . . . . . . . . 8
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Contact information. . . . . . . . . . . . . . . . . . . . . 10
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11