Data Sheet 1 of 10 Rev. 02, 2009-03-27
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
Description
The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs
designed for use in cellular power amplifier applications in the 725 to
770 MHz frequency band. These devices feature internal I/O matching
and thermally-enhanced, open-cavity ceramic packages.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior reliability.
PTFA072401EL
Package H-33288-2
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 725 – 770 MHz
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.9 A, ƒ = 765 MHz
15
16
17
18
19
20
21
30 35 40 45 50 55
Output Power (dBm)
Gain (dB)
5
15
25
35
45
55
65
Drain Efficiency (%)
Efficiency
Gain
PTFA072401FL
Package H-34288-2
Features
•Broadband internal matching
•Typical two-carrier WCDMA performance at
770 MHz, 30 V
- Average output power = 40 W
- Linear Gain = 19 dB
- Efficiency = 25%
- Intermodulation distortion = –39 dBc
•Typical CW performance, 770 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 58%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
•Thermally-enhanced packages, Pb-free and RoHS
compliant with low gold (<0.25 micron) plating
*See Infineon distributor for future availability.
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1800 mA, POUT = 40 W average
ƒ1 = 760 MHz, ƒ2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps —19 —dB
Drain Efficiency ηD—25 —%
Intermodulation Distortion IMD —–39 —dBc
Data Sheet 2 of 10 Rev. 02, 2009-03-27
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
*See Infineon distributor for future availability.
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1800 mA, POUT = 220 W PEP, ƒ = 765 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 18 19 —dB
Drain Efficiency ηD43 45 —%
Intermodulation Distortion IMD —–29 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS ——10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —1.82 —Ω
Operating Gate Voltage VDS = 30 V, IDQ = 2100 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD700 W
Above 25°C derate by 4.0 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 240 W CW) RθJC 0.28 °C/W
Ordering Information
Type and Version Package Outline Package Description Shipping Marking
PTFA072401EL V4 H-33288-2 Thermally-enhanced slotted flange, Tray PTFA072401EL
single-ended
PTFA072401FL V4 H-34288-2 Thermally-enhanced earless flange, Tray PTFA072401FL
single-ended
Data Sheet 3 of 10 Rev. 02, 2009-03-27
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
Broadband Performance
VDD = 30 V, IDQ = 1800 mA, POUT = 126 W
15
20
25
30
35
40
45
50
700 730 760 790
Frequency (MHz)
Gain (dB), Efficiency (%)
-35
-30
-25
-20
-15
-10
-5
0
Input Return Loss (dB)
Gain
Efficiency
Return Loss
Two-tone Drive-up
VDD = 30 V, IDQ = 1800 mA,
ƒ = 765 MHz, tone spacing = 1 MHz
-60
-55
-50
-45
-40
-35
-30
-25
42 44 46 48 50 52 54 56
Output Power, PEP (dBm)
15
20
25
30
35
40
45
50
Drain Efficiency (%)
IM5
Efficiency
IM7
Intermodulation Distortion (dBc)
IM3
Power Sweep
VDD = 30 V, ƒ = 770 MHz
15
16
17
18
19
20
21
30 35 40 45 50 55
Output Power (dBm)
Power Gain (dB)
IDQ
= 1.6 A
IDQ
= 1.8 A
IDQ
= 1.4 A
IDQ
= 2.2 A
IDQ
= 2.0 A
CW Performance, selected voltages
IDQ = 1.8 A, ƒ = 770 MHz
36
40
44
48
52
56
60
64
49 50 51 52 53 54 55
Output Power (dBm)
Drain Efficiency (%)
15
16
17
18
19
20
Gain (dB)
Efficiency
Gain
VDD = 26 V
VDD = 28 V
VDD = 32 V
Typical Performance (data taken in Infineon production test fixture)
Data Sheet 4 of 10 Rev. 02, 2009-03-27
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 020 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
2.334 A
4.65 A
9.33 A
11.64 A
13.98 A
16.32 A
18.66 A
21 A
2-Carrier WCDMA Performance
VDD = 30 V, IDQ = 1.9 A, ƒ = 765 MHz
0
10
20
30
40
50
60
30 32 34 36 38 40 42 44 46 48 50
Output Power (dBm)
Drain Efficiency (%)
-60
-55
-50
-45
-40
-35
-30
-25
-20
ACPR (dBc)
TCASE = 25°C
TCASE = 90°C
Efficiency
IM3
ACPR
Typical Performance (cont.)
See next page for impedance data
Data Sheet 5 of 10 Rev. 02, 2009-03-27
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source Z Load
G
S
D
0.1
0.3
0.5
0.2
0.4
0.1
0.1
0
.2
-
W
AV
E
LE
N
GT
H
S T
O
W
AR
D
G
E
NE
R
A
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Z Load
Z Source
770 MHz
725 MHz
725 MHz
770 MHz
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
725 2.53 –4.83 1.64 –1.54
736 2.48 –4.64 1.55 –1.48
748 2.44 –4.41 1.46 –1.33
759 2.41 –4.22 1.42 –1.17
770 2.37 –4.04 1.36 –1.11
Z0 = 50 Ω
Data Sheet 6 of 10 Rev. 02, 2009-03-27
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
Reference Circuit
VDD
R9
2K V
C22
3.9pF
l11
L2
l12
C14
10µF
L1
R4
2K V
R1
1.2K V
C9
62pF
l4
R8
10 V
DUT
J1 J2
C6
4.7µF
C5
10µF
35V
C4
0.1µF
C7
0.1µF
C8
62pF
R7
5.1KV
R6
10 V
l1
C10
3.9pF
C12
62pF
C13
2.2µF
C16
10µF
35V
C23
3.9pF
C24
62pF
C11
9.1pF
l2l3l6
l5C15
0.1µF
l7
l8
l9l10 l13
C17
62pF
C20
0.1µF
C18
2.2µF
C19
10µF
C21
10µF
35V
R3
2K V
C3
0.001µF
C2
0.001µF
Q1
BCP56
R2
1.3K V
QQ1
LM7805
C1
0.001µF
VDD
R5
10 V
Reference circuit schematic for ƒ = 770 MHz
Circuit Assembly Information
DUT PTFA072401EL or PTFA072401FL LDMOS Transistor
PCB 0.76 mm [.030"] thick, er = 3.48 Rogers RO4350 1 oz. copper
Microstrip Electrical Characteristics at 770 MHz Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.025 λ, 50.7 Ω5.84 x 1.65 0.230 x 0.065
l2, l30.048 λ, 38.4 Ω11.18 x 2.54 0.440 x 0.100
l40.002 λ, 76.8 Ω0.51 x 0.76 0.020 x 0.030
l50.145 λ, 76.8 Ω35.43 x 0.76 1.395 x 0.030
l60.094 λ, 7.8 Ω20.32 x 17.78 0.800 x 0.700
l7, l80.108 λ, 44.5 Ω25.40 x 2.03 1.000 x 0.080
l90.140 λ, 6.5 Ω29.97 x 21.59 1.180 x 0.850
l10 (taper) 0.058 λ, 6.5 Ω / 29.4 Ω13.13 x 21.59 / 3.68 0.517 x 0.850 / 0.145
l11 (taper) 0.004 λ, 29.4 Ω / 38.4 Ω0.84 x 3.68 / 2.54 0.033 x 0.145 / 0.100
l12 0.005 λ, 38.4 Ω1.27 x 2.54 0.050 x 0.100
l13 0.016 λ, 50.7 Ω3.76 x 1.65 0.148 x 0.065
Data Sheet 7 of 10 Rev. 02, 2009-03-27
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
a072401efl_cd_3-18-09
RF_IN RF_OUT
LM
VDD
VDD
VDD
Reference Circuit (cont.)
Reference circuit asembly diagram* (not to scale)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4, C7, C15, C20 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C5, Tantalum Capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C6 Capacitor, 4.7 µF, 16 V Digi-Key PCS3475CT-ND
C8, C9, C12, C17, C24 Ceramic capacitor, 62 pF ATC 100B 620
C10, C22, C23 Ceramic capacitor, 3.9 pF ATC 100B 3R9
C11 Ceramic capacitor, 9.1 pF ATC 100B 9R1
C13, C18 Capacitor, 2.2 µF Digi-Key 445-1447-2-ND
C14, C16, C19, C21 Tantalum Capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND
L1, L2 Ferrite, 8.9 mm Digi-Key 240-2511-2-ND
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage Regulator National Semiconductor LM7805
R1 Chip resistor, 1.2k ΩDigi-Key P1.2KGCT-ND
R2 Chip resistor, 1.3k ΩDigi-Key P1.3KGCT-ND
R3, R9 Chip resistor, 2k ΩDigi-Key P2KECT-ND
R4 Variable Resistor 2k ΩDigi-Key 3224W-202ETR-ND
R5, R6, R8 Chip resistor, 10 ΩDigi-Key P10ECT-ND
R7 Chip resistor 5.1k ΩDigi-Key P5.1KECT-ND
Data Sheet 8 of 10 Rev. 02, 2009-03-27
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-33288-2
C66065-A0003-C723-01-0027 H-33288-2.dwg
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating less than 0.25 micron [10 microinch].
Data Sheet 9 of 10 Rev. 02, 2009-03-27
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
C66065-A0003-C724-01-0027 H-34288-2.dwg
Package Outline Specifications (cont.)
Package H-34288-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating less than 0.25 micron [10 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
