MJ10012
NPN Silicon Power Darlington Transistor
TO3 Type Package
Description:
The MJ10012 is high−voltage, high−current Darlington transistor in a TO3 type package designed
for automotive ignition, switching regulation and motor control applications.
Features:
DCollector−Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min)
D175 Watts Capability at 50 Volts
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 400V.....................................................
Collector−Emitter Voltage (RBE = 273), VCER 550V.........................................
Collector−Base Voltage, VCBO 600V......................................................
Emitter−Base Voltage, VEBO 8V..........................................................
Collector Current, IC
Continuous 10A..................................................................
Peak (Note 1) 15A................................................................
Base Current, IB2A....................................................................
Total Power Dissipation, PD
TC = +255C 175W................................................................
TC = +1005C 100W...............................................................
Derate Above 255C 1.0W/5C....................................................
Operating Junction Temperature Range, TJ−655 to +2005C..................................
Storage Temperature Range, Tstg −655 to +2005C..........................................
Thermal Resistance, Junction−to−Case, RthJC 1.05C/W.....................................
Lead Temperature (During Soldering, 1/8” from case, 5 sec), TL+2755C.......................
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 3 10%.
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 2)
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Vclamp = 400V 400 − − V
VCER(sus) IC = 200mA, RBE = 273, Vclamp = 400V 425 − − V
Collector Cutoff Current ICER VCER = 550V, RBE = 273− − 1.0 mA
ICBO VCBO= 600V, IE = 0 − − 1.0 mA
Emitter Cutoff Current IEBO VEB = 6V, IC = 0 − − 40 mA
ON Characteristics (Note 3)
DC Current Gain hFE VCE = 6V, IC = 3A 300 550 −
VCE = 6V, IC = 6A 100 350 2000
VCE = 6V, IC = 10A 20 150 −
Collector−Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 600mA − − 1.5 V
IC = 6A, IB = 600mA − − 2.0 V
IC = 10A, IB = 2A − − 2.5 V
Base−Emitter Saturation Voltage VBE(sat) IC = 6A, IB = 600mA − − 2.5 V
IC = 10A, IB = 2A − − 3.0 V
Base−Emitter ON Voltage VBE(on) IC = 10A, VCE = 6V − − 2.8 V
Diode Forward Voltage VFIF = 10A −2.0 3.5 V
Dynamic Characteristics
Output Capacitance Cob VCB = 10V, IE = 0, ftest = 100kHz 165 −350 pF
Switching Characteristics
Storage Time tsVCC = 12V, IC = 6A, IB1 = IB2 = 300mA −7.5 15 5s
Fall Time tf−5.2 15 5s
Functional Tests
Pulsed Energy Test IC2L/2 − − 180 mJ
Note 2. Pulse Test: Pulse Width = 3005s, Duty Cycle = 2%.
B
C
E
1k 30
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
