BCP5216TA - Diodes [Zetex] - Datasheet.Directory

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2 1 of 7

www.diodes.com June 2011

BCP 51 / 52 / 53

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features

• I

C = -1A Continuous Collector Current

• Low Saturation Voltage VCE(sat) < -500mV @ -0.5A

• Gain groups 10 and 16

• Epitaxial Planar Die Construction

• Complementary NPN types: BCP54, 55 and 56

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Devices (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT223

• Case Material: Molded Plastic, “Green” Molding

Compound (Note 2)

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.112 grams (Approximate)

Applications

• Medium Power Switching or Amplification Applications

• AF driver and output stages

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

BCP51TA BCP 51 7 12 1,000

BCP5110TA BCP 5110 7 12 1,000

BCP5116TA BCP 5116 7 12 1,000

BCP5116TC BCP 5116 13 12 4,000

BCP52TA BCP 52 7 12 1,000

BCP5210TA BCP 5210 7 12 1,000

BCP5216TA BCP 5216 7 12 1,000

BCP53TA BCP 53 7 12 1,000

BCP5310TA BCP 5310 7 12 1,000

BCP5316TA BCP 5316 7 12 1,000

BCP5316TC BCP 5316 13 12 4,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website http://www.diodes.com

Marking Information

BCP = Product Type Marking Code, Line 1.

xxxx = Product Type Marking Code, Line 2 as follows:

BCP51 = 51 BCP52 = 52 BCP53 = 53

BCP5110 = 5110 BCP5210 = 5210 BCP5310 = 5310

BCP5116 = 5116 BCP5216 = 5216 BCP5316 = 5316

Top View Device Symbol

SOT223

C

E

B

Top View

Pin-Out

CC

B

E

xxxx

BCP

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2 2 of 7

www.diodes.com June 2011

BCP 51 / 52 / 53

Maximum Ratings @ TA = 25°C unless otherwise specified

Characteristic Symbol BCP51 BCP52 BCP53 Unit

Collector-Base Voltage VCBO -45 -60 -100 V

Collector-Emitter Voltage VCEO -45 -60 -80 V

Emitter-Base Voltage VEBO -5 V

Continuous Collector Current IC -1 A

Peak Pulse Collector Current ICM -2

Continuous Base Current IB -100 mA

Peak Pulse Base Current IBM -200

Thermal Characteristics @ TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4) PD2 W

Thermal Resistance, Junction to Ambient (Note 4) RθJA 62 °C/W

Thermal Resistance, Junction to Leads (Note 5) RθJL 19.4 °C/W

Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C

Notes: 4. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

5. Thermal resistance from junctio n to solder-point (at the end of the collector lead).

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2 3 of 7

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BCP 51 / 52 / 53

Thermal Characteristics

100µ 1m 10m 100m 1 10 100 1k

0

20

40

60

80

100

120

140

160

0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0 5 0 mm x 50mm

1oz Cu

Derating Cu rve

Temperature (°C)

Max P owe r Di ssipa t i on (W)

100µ 1m 10m 100m 1 10 100 1k

0

10

20

30

40

50

60 50mm x 50mm 1oz Cu

Tamb = 25°C

Pu lse Power Dissipation

Puls e Width (s )

Tran sient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Th er mal R e si sta n ce (°C/W)

Pul se Width ( s)

50mm x 50mm 1oz Cu

Tamb = 25°C

S ingle pu ls e

Maximum Power (W)

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2 4 of 7

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BCP 51 / 52 / 53

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base

Breakdown Voltage

BCP51 BVCBO -45 - - V

IC = -100µA

BCP52 -60

BCP53 -100

Collector-Emitter

Breakdown Voltage (Note 6)

BCP51 BVCEO -45 - - V

IC = -10mA

BCP52 -60

BCP53 -80

Emitter-Base Breakdown Voltage BVEBO -5 - - V

IE = -10µA

Collector Cut-off Current ICBO - -

-0.1

-20 µA VCB = -30V

VCB = -30V, TA = 150°C

Emitter Cut-off Current IEBO - - -20 nA

VEB = -4V

Static Forward Current Transfer Ratio (Note 6) All versions hFE

25

40

25

-

250

- -

IC = -5mA, VCE = -2V

IC = -150mA, VCE = -2V

IC = -500mA, VCE = -2V

10 gain grp 63 - 160 IC = -150mA, VCE = -2V

16 gain grp 100 - 250 IC = -150mA, VCE = -2V

Collector-Emitter Saturation Voltage (Note 6) VCE

(

sat

)

- - -0.5 V

IC = -500mA, IB = -50mA

Base-Emitter Turn-On Voltage (Note 6) VBE

(

on

)

- - -1.0 V

IC = -500mA, VCE = -2V

Transition Frequency fT 150 - - MHz

IC = -50mA, VCE = -10V

f = 100MHz

Output Capacitance Cobo - - 25 pF

VCB = -10V, f = 1MHz

Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

0

0.2

0.4

0.6

0.8

1.0

012345

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

I,

C

O

LLE

C

T

O

R

C

U

R

E

N

T

(A)

C

I = 2mA

B

I = 4mA

B

I = 6mA

B

I = 8mA

B

I = 10mA

B

Fig. 1 Typical Collector Current

vs. C ollecto r -Em i t t er Volt age

0

100

200

300

400

500

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

h, D

C

U

R

EN

T

G

AIN

FE

Fig. 2 Typical DC Current Gain vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V = -5V

CE

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2 5 of 7

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BCP 51 / 52 / 53

0

0.2

0.4

0.6

0.8

1.0

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT(A)

C

-V , BASE-EMI

T

E

R

T

U

R

N

-

O

N

V

O

L

T

A

G

E (V)

BE(ON)

Fig 3 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V = -2V

CE

0

0.1

0.2

0.3

0.4

0.5

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

-V ,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION VOLTAGE (V)

CE(SAT)

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. C ollector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

0

0.2

0.4

0.6

0.8

1.0

1.2

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

-V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N V

O

L

T

A

G

E (V)

BE(SAT)

Fig. 5 T y pical Base-Emitter Saturation Vo ltage

vs. Col lector Cu r rent

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

I / I = 10

CB

0

50

100

150

200

250

300

020406080100

-I , COLLECTOR CURRENT (mA)

C

f,

G

AIN-BANDWID

T

H

P

R

O

D

U

C

T

(M

H

z)

T

Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current

V = -5V

CE

f = 100MHz

0

20

40

60

80

100

120

140

160

010203040

V , REVERSE VOLT AGE (V)

R

CAPACITANCE(pF)

Fig. 7 Typical Capacitance Characteristics

C

obo

C

ibo

f = 1MHz

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2 6 of 7

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BCP 51 / 52 / 53

Package Outline Dimensions

Suggested Pad Layout

SOT223

Dim Min Max Typ

A 1.55 1.65 1.60

A1 0.010 0.15 0.05

b1 2.90 3.10 3.00

b2 0.60 0.80 0.70

C 0.20 0.30 0.25

D 6.45 6.55 6.50

E 3.45 3.55 3.50

E1 6.90 7.10 7.00

e — — 4.60

e1 — — 2.30

L 0.85 1.05 0.95

Q 0.84 0.94 0.89

All Dimensions in mm

Dimensions Value (in mm)

X1 3.3

X2 1.2

Y1 1.6

Y2 1.6

C1 6.4

C2 2.3

A1

A

X2

C1

C2

X1

Y2

Y1

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2 7 of 7

www.diodes.com June 2011

BCP 51 / 52 / 53

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