MS1076
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
DESCRIPTION:
The MS1076 is a 28 volt epitaxial NPN silicon planar transistor
designed primarily for SSB and VHF communications. This
device utilizes an emitter ballasted die geometry for maximum
ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO Collector - Base Voltage 70 V
VCEO Collector - Emitter Voltage 35 V
VEBO Emitter - Base Voltage 4.0 V
IC Device Current 16 A
PDISS Power Dissipation 250 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature - 65 to +150 °C
Thermal Data
RTH(J-C) Junction - Case Thermal Resistance 0.7 °C/W
Rev A: October 2009
Features
• 30 MHz
• 28 VOLTS
• GOLD METALLIZATION
• POUT = 220 W PEP
• GP = 12 dB GAIN MINIMUM
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
MS1076
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
BVCES I
C = 100 mA 70 --- --- V
BVCEO I
C = 200 mA 35 --- --- V
BVEBO I
E = 20 mA 4.0 --- --- V
ICEO V
CE = 30 V --- --- 5 mA
ICES V
CE = 35 V --- --- 5 mA
HFE V
CE = 5 V, IC = 7 A 15 --- 60 ---
DYNAMIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
POUT f = 30 MHz VCE = 28 V ICQ = 750 mA 220 --- --- WPEP
GP f = 30 MHz VCE = 28 V ICQ = 750 mA 12 --- --- dB
ηC f = 30 MHz VCE = 28 V ICQ = 750 mA 40 --- --- %
IMD f = 30 MHz VCE = 28 V ICQ = 750 mA --- --- -30 dBc
COB f = 1 MHz VCB = 28 V --- 450 --- pf
Conditions f1 = 30.000 MHz f2 = 30.001 MHz
HFE BINNING (marked on lid with appropriate letter):
A = 15-19 D = 27-32 G = 45-50
B = 19-22.5 E = 32-38 H = 50-55
C = 22.5-27 F = 38-45 I = 55-60
IMPEDANCE DATA
FREQ ZIN ZCL
30 MHz 1.2 + j0.41 1.25 + j1.92
MS1076
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
TYPICAL PERFORMANCE
Pout v s Pin
0
25
50
75
100
125
150
175
200
225
250
275
012345678910111213141516
Pin(W)
Pout(W)
Gain vs Pout
11.00
11.50
12.00
12.50
13.00
13.50
14.00
14.50
15.00
15.50
0 20 40 60 80 100 120 140 160 180 200 220 240 260
Pout(W)
Gain(dB)
MS1076
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
TEST CIRCUIT
MS1076
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
BIAS CIRCUIT
MS1076
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
PACKAGE MECHANICAL DATA
