2N3905
PNP General Purpose Amplifier
2N3905
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Vo ltage 40 V
VCBO Collector-Base Voltage 40 V
VEBO E m i tter - Base Voltage 5 . 0 V
ICC ollector Current - Continuous 200 mA
TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N3905
PDTo ta l De vice Dissip at i on
Derate above 25°C625
5.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
CBETO-92
2N3905, Rev A
2001 Fairchild Semiconductor Corporation
2N3905
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symb ol Parameter Test Conditions Min Max Un its
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 1 0 µA, IE = 0 40 V
V(BR)EBO Em it ter - Bas e B r e akdown Voltage IE = 10 µA, IC = 0 5.0 V
ICEX Collector Cutoff Current VCE = 3 0 V, V OB = 3.0 V 50 nA
IBL Ba se Cutoff Curre nt VCE = 3 0 V, V OB = 3.0 V 50 nA
hFE DC Cur rent G ain VCE = 1.0 V, IC = 0.1 mA
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 1 0 mA
VCE = 1.0 V, IC = 5 0 mA
VCE = 1.0 V, IC = 1 00 m A
30
40
50
30
15
150
VCE(sat)Co ll ector-E mitter Sa turation Vo ltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.25
0.40 V
V
VBE(sat)Base-Emitter Saturation Voltage IC = 1 0 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.65 0.85
0.95 V
V
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacita n ce VCB = 5.0 V, f = 1.0 MHz 4.5 pF
Cib Input Capacitance VEB = 0.5 V, f = 1.0 MHz 10 pF
hfe Small-Signal Current Gain IC = 10 mA, VCE = 2 0 V,
f = 100 MH z 2.0
hfe Small-Signal Current Gain IC = 1.0 mA, VCE =10 V, 50 200
hre Voltage Feedback Ratio f = 1.0 KHz 0.1 5.0 x10 -4
hie Input Impedance 0.5 8.0 kΩ
hoe Output Impedance 1.0 40 µmhos
NF Noise Figure VCE = 5.0 V, IC = 1 00 µA,
RS = 1.0 kΩ,
BW = 1 0 Hz to 15.7 KHz
5.0 dB
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
tdDelay Time VCC = 3.0 V, ICS = 1 0 mA, 35 ns
trRise Time IB1 = 1.0 mA ,VOB ( o ff ) = 3. 0 V 35 ns
tsStor age T i m e VCC = 3.0 V, ICS = 10 mA, 200 ns
tfFall Time IB1 = IB2 = 1.0 mA 60 ns
ON CHARACTERISTICS*
2N3905
Typical Characteristics
Common-B ase Op en Circuit
Input and O ut put Capacitance
vs Rever se Bi as Voltage
0.1 1 10
0
2
4
6
8
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
PNP General Purpose Amplifier
(continued)
Typi cal Pu lsed Cu rr ent Gai n
vs Colle ct or Cu r r e nt
0.1 0.2 0.5 1 2 5 10 20 50 100
50
100
150
200
250
I - COLLECTOR C URRENT (mA)
h - TYPICAL PULSED CURRENT GAI N
C
FE
125 ° C
25 ° C
- 40 °C
V = 1.0V
CE
Colle c t or- E mit te r S at ura t ion
V olta ge v s Colle c tor Current
110100200
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V - COLLEC TOR EMITTER VOLTAGE (V)
C
CESAT
25 °C
- 4 0 °C
125°C
β= 10
B ase-Emitter Saturati o n
Vo ltag e vs C o llector Cur rent
110100200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V - BA SE EMITTE R VOLTAGE (V)
C
BESAT
β= 10
25 °C
- 40 °C
125 °C
Base Emitter ON Voltage vs
Collector Curre nt
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BE(ON)
V = 1V
CE
25 °C
- 4 0 °C
125 °C
C o ll ector -C u toff Cu r rent
vs A mb ient Temp eratu re
25 50 75 100 125
0.01
0.1
1
10
100
T - AM BIE NT TE MP E RATU RE ( C)
I - COLLE CTOR CU RRE NT (nA)
A
CBO
°
V = 2 5V
CB
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - PO WER DISSIPATION (W)
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics (continued)
Noise Fig ur e vs Fr equency
0.1 1 10 100
0
1
2
3
4
5
6
f - FREQUENCY (kHz)
NF - NOI S E FIGU RE ( d B)
I = 100 µA, R = 200Ω
C
V = 5.0V
CE
S
I = 100 µA, R = 2.0 kΩ
CS
I = 1.0 mA, R = 200Ω
CS
Noise Figure vs Sour ce Re sist an ce
0.1 1 10 100
0
2
4
6
8
10
12
R - SO URCE RE SIS TAN CE ( )
NF - NOISE FIGURE (dB)
kΩ
I = 100 µA
C
V = 5.0V
f = 1.0 kHz
CE
I = 1.0 mA
C
S
Switching Time s
vs Collec to r C urren t
1 10 100
1
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I = tr
t
s
B1
C
B2 Ic
10
tf
td
Tu rn On and Turn Of f Time s
vs Collector C urrent
1 10 100
1
10
100
500
I - COLLE CTOR CU RRENT (mA)
TIME ( nS)
I = I =
t
off
B1 B2 Ic
10
t
on
V = 0.5V
BE(OFF)
t I =
on
t
off
B1 Ic
10
2N3905
PNP General Purpose Amplifier
(continued)
2N3905
Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Input Impedan c e
0.1 1 10
0.1
1
10
I - COLLECT OR CURR ENT (mA)
h - INPUT IMPEDANCE ( k )
V = 10 V
CE
C
ie
f = 1.0 kH z
Ω
Outp ut Admi tta n ce
0.1 1 10
10
100
1000
I - COLLEC TOR CUR RENT (mA)
h - OUTPUT ADMITTANCE ( mhos)
V = 10 V
CE
C
oe
f = 1.0 kH z
µ
Cur rent Gain
0.1 1 10
10
20
50
100
200
500
1000
I - COLLECTO R CURRENT (m A)
h - CUR RENT GA IN
V = 10 V
CE
C
fe
f = 1.0 kH z
Vol tage Feed back Ratio
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h - VOL T A GE FEEDBACK RATIO (x10 )
C
re
_4
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This datasheet contains the design specifications for
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any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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any time without notice in order to improve design.
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