SFH 229
SFH 229 FA
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit
Silicon PIN Photodiode with Very Short Switching Time
Lead (Pb) Free Product - RoHS Compliant
SFH 229 SFH 229 FA
2007-04-04 1
Wesentliche Merkmale
• Speziell geeignet für Anwendunge n im Bereich
von 380 nm bis 1100 nm (SFH 229 ) und bei
880 nm (SFH 229 FA)
• Kurze Schaltzeit (typ. 10 ns)
• 3 mm-Plastikbauform im LED-Gehäuse
• Auch gegurtet lieferbar
Anwendungen
• Lichtschranken für Gleich- und Wechselbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
SFH 229 Q62702P0215
SFH 229 FA Q62702P0216
Features
• Especially suitable for applications from
380 nm to 1100 nm (SFH 229) and of 880 nm
(SFH 229 FA)
• Short switching time (typ. 10 ns)
• 3 mm LED plastic package
• Also available on tape and reel
Applications
• Photointerrupters
• Industrial electronics
• For control and drive circuits
2007-04-04 2
SFH 229, SFH 229 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 100 °C
Sperrspannung
Reverse voltage VR20 V
Verlustleistung
Total power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 229 SFH 229 FA
Fotostrom
Photocurrent
VR = 5 V, Normlicht/standard light A,
T = 2856 K, EV = 1000 lx
VR = 5 V, λ = 950 nm, Ee = 1 mW/cm2
IP
IP
28 (≥ 18)
–
–
20 (≥ 10.8)
μA
μA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 860 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sens itivity
S = 10% of Smax
λ380 … 1100 730 … 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A 0.3 0.3 mm2
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area L × B
L × W0.56 × 0.56 0.56 × 0.56 mm × mm
Halbwinkel
Half angle ϕ ± 17 ± 17 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR 50 (≤ 5000) 50 (≤ 5000) pA
Spektrale Fotoempfindlichkeit, λ = 850 nm
Spectr al sensitivity Sλ0.62 0.60 A/W
Quantenausbeute, λ = 850 nm
Quantum yield η0.90 0.88 Electrons
Photon
SFH 229, SFH 229 FA
2007-04-04 3
Leerlaufspannung
Open-circuit voltage
Ev = 1000 Ix, Normlicht/standard light A,
T = 2856 K
Ee = 0.5 mW/cm2, λ = 950 nm
VO
VO
450 (≥ 400)
–
–
420 (≥ 370)
mV
mV
Kurzschlußstrom
Short-circuit current
Ev = 1000 Ix, Normlicht/standard light A,
T = 2856 K
Ee = 0.5 mW/cm2, λ = 950 nm
ISC
ISC
27
–
–
9
μA
μA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 10 V; λ = 850 nm; Ip = 800 μA
tr, tf10 10 ns
Durchlaßspannung, IF = 100 mA, E = 0
Forward voltage VF1.3 1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C013 13 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 – 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
Normlicht/standard light A
λ = 950 nm
TCI
0.18
–
–
0.2
%/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 850 nm
NEP 6.5 × 10– 15 6.5 × 10– 15
Nachweisgrenze, VR = 10 V, λ = 850 nm
Detection limit D* 8.4 × 1012 8.4 × 1012
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 229 SFH 229 FA
W
Hz
------------
cm Hz×
W
--------------------------
SFH 229, SFH 229 FA
2007-04-04 4
Relative Spectral Sensitivity
Srel = f (λ)
SFH 229
Photocurrent IP = f (Ee), VR = 5 V
Open-Circuit Voltage VO = f (Ee)
SFH 229 FA
Relative Spectral Sensitivity
Srel = f (λ)
SFH 229 FA
Total Power Dissipation
Ptot = f (TA)
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Voltage VO = f (Ev)
SFH 229
Dark Current
IR = f (VR), E = 0
SFH 229, SFH 229 FA
2007-04-04 5
Capacitance
C = f (VR), f = 1 MHZ, E = 0
Directional Characteristics
Srel = f (ϕ)
Dark Current
IR = f (TA), VR = 10 V, E = 0
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SFH 229, SFH 229 FA
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
0.6 (0.024)
0.4 (0.016)
4.0 (0.157)
3.6 (0.142)
ø3.1 (0.122)
ø2.9 (0.114)
4.1 (0.161)
3.9 (0.154)
5.2 (0.205)
4.5 (0.177)
3.5 (0.138)
6.3 (0.248)
5.9 (0.232)
1.8 (0.071)
1.2 (0.047)
29 (1.142)
27 (1.063)
2.54 (0.100)
spacing
0.7 (0.028)
0.4 (0.016)
Chip position
Collector (Transistor)
Area not flat
GEOY6653
0.4 (0.016)
0.8 (0.031)
Cathode (Diode)
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
SFH 229, SFH 229 FA
2007-04-04 7
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considere d as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
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material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the he alth of the user may be endangered.
