© Semiconductor Components Industries, LLC, 2012
February, 2012 Rev. 6
1Publication Order Number:
MPF4392/D
MPF4392, MPF4393
JFET Switching Transistors
NChannel Depletion
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
DrainSource Voltage VDS 30 Vdc
DrainGate Voltag VDG 30 Vdc
GateSource Voltage VGS 30 Vdc
Forward Gate Current IG(f) 50 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD350
2.8
mW
mW/°C
Operating and Storage Channel
Temperature Range
Tchannel,
Tstg
65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
Device Package Shipping
ORDERING INFORMATION
MPF4392 TO92 1000 Units / Bulk
MPF4392G TO92
(PbFree)
1000 Units / Bulk
MPF4393 TO92 1000 Units / Bulk
MPF4393G TO92
(PbFree)
1000 Units / Bulk
MPF4393RLRP TO92 1000 / Ammo Box
MPF4393RLRPG TO92
(PbFree)
1000 / Ammo Box
TO92 (TO226AA)
CASE 2911
STYLE 5
MARKING DIAGRAM
MPF439x = Device Code
x = 2 or 3
A = Assembly Location
Y = Year
WW = Work Week
G=PbFree Package
MPF
439x
AYWW G
G
(Note: Microdot may be in either location)
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
MPF4392, MPF4393
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
GateSource Breakdown Voltage
(IG = 1.0 mAdc, VDS = 0)
V(BR)GSS 30 Vdc
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
IGSS
1.0
0.2
nAdc
mAdc
DrainCutoff Current
(VDS = 15 Vdc, VGS = 12 Vdc)
(VDS = 15 Vdc, VGS = 12 Vdc, TA = 100°C)
ID(off)
1.0
1.0
nAdc
mAdc
Gate Source Voltage
(VDS = 15 Vdc, ID = 10 nAdc) MPF4392
MPF4393
VGS 2.0
0.5
5.0
3.0
Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (Note 1)
(VDS = 15 Vdc, VGS = 0) MPF4392
MPF4393
IDSS 25
5.0
75
30
mAdc
DrainSource OnVoltage
(ID = 6.0 mAdc, VGS = 0) MPF4392
(ID = 3.0 mAdc, VGS = 0) MPF4393
VDS(on)
0.4
0.4
Vdc
Static DrainSource On Resistance
(ID = 1.0 mAdc, VGS = 0) MPF4392
MPF4393
rDS(on)
60
100
W
SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, ID = 25 mAdc, f = 1.0 kHz) MPF4392
(VDS = 15 Vdc, ID = 5.0 mAdc, f = 1.0 kHz) MPF4393
|yfs|
17
12
mmhos
DrainSource “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz) MPF4392
MPF4393
rds(on)
60
100
W
Input Capacitance (VGS = 15 Vdc, VDS = 0, f = 1.0 MHz) Ciss 6.0 10 pF
Reverse Transfer Capacitance
(VGS = 12 Vdc, VDS = 0, f = 1.0 MHz)
(VDS = 15 Vdc, ID = 10 mAdc, f = 1.0 MHz)
Crss
2.5
3.2
3.5
pF
SWITCHING CHARACTERISTICS
Rise Time (See Figure 2)
(ID(on) = 6.0 mAdc) MPF4392
(ID(on) = 3.0 mAdc) MPF4393
tr
2.0
2.5
5.0
5.0
ns
Fall Time (See Figure 4)
(VGS(off) = 7.0 Vdc) MPF4392
(VGS(off) = 5.0 Vdc) MPF4393
tf
15
29
20
35
ns
TurnOn Time (See Figures 1 and 2)
(ID(on) = 6.0 mAdc) MPF4392
(ID(on) = 3.0 mAdc) MPF4393
ton
4.0
6.5
15
15
ns
TurnOff Time (See Figures 3 and 4)
(VGS(off) = 7.0 Vdc) MPF4392
(VGS(off) = 5.0 Vdc) MPF4393
toff
20
37
35
55
ns
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 3.0%.
MPF4392, MPF4393
http://onsemi.com
3
Figure 1. TurnOn Delay Time Figure 2. Rise Time
Figure 3. TurnOff Delay Time Figure 4. Fall Time
TYPICAL SWITCHING CHARACTERISTICS
ID, DRAIN CURRENT (mA)
, TURN-ON DELAY TIME (ns)
d(on)
t
5.0
2.0
20
10
0.5 1.0 3.0 7.0
5.0
1.0
50
100
0.7 2.0 10 20
, RISE TIME (ns)
r
t
, TURN-OFF DELAY TIME (ns)
d(off)
t
, FALL TIME (ns)
f
t
30 50
200
500
1000
VGS(off) = 7.0 V
= 5.0 V
MPF4392
MPF4393
ID, DRAIN CURRENT (mA)
5.0
2.0
20
10
0.5 1.0 3.0 7.0
5.0
1.0
50
100
0.7 2.0 10 20 30 50
200
500
1000
ID, DRAIN CURRENT (mA)
5.0
2.0
20
10
0.5 1.0 3.0 7.05.0
1.0
50
100
0.7 2.0 10 20 30 50
200
500
1000
ID, DRAIN CURRENT (mA)
5.0
2.0
20
10
0.5 1.0 3.0 7.05.0
1.0
50
100
0.7 2.0 10 20 30 50
200
500
1000
TJ = 25°CTJ = 25°C
TJ = 25°C TJ = 25°C
RK = RD
RK = 0
RK = RD
RK = 0
RK = RD
RK = 0
RK = RD
RK = 0
VGS(off) = 7.0 V
= 5.0 V
MPF4392
MPF4393
VGS(off) = 7.0 V
= 5.0 V
MPF4392
MPF4393
VGS(off) = 7.0 V
= 5.0 V
MPF4392
MPF4393
MPF4392, MPF4393
http://onsemi.com
4
Figure 5. Switching Time Test Circuit
10
2.0
15
3.0
5.0
7.0
0.5 1.0 3.0 305.00.30.1 100.050.03
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
50 17020-10-40 80 140-70
r
1.8
1.0
2.0
1.2
1.4
1.6
0.8
0.6
0.4
, DRAIN-SOURCE ON-STATE
ds(on)
RESISTANCE (NORMALIZED)
Tchannel, CHANNEL TEMPERATURE (°C)
1.5
1.0
110
VDD
VGG
RGG
RT
RGEN
50 W
VGEN
RK
RD
OUTPUT
INPUT
50
W
50
W
SET VDS(off) = 10 V
INPUT PULSE
tr 0.25 ns
tf 0.5 ns
PULSE WIDTH = 2.0 ms
DUTY CYCLE 2.0%
RGG & RK
RD = RD(RT + 50)
RD + RT + 50
Figure 6. Typical Forward Transfer Admittance
NOTE 1
The switching characteristics shown above were measured using a
test circuit similar to Figure 5. At the beginning of the switching
interval, the gate voltage is at Gate Supply Voltage (VGG). The
DrainSource Voltage (VDS) is slightly lower than Drain Supply
Voltage (VDD) due to the voltage divider. Thus Reverse Transfer
Capacitance (Crss) or GateDrain Capacitance (Cgd) is charged to
VGG + VDS.
During the turnon interval, GateSource Capacitance (Cgs)
discharges through the series combination of RGen and RK. Cgd
must discharge to VDS(on) through RG and RK in series with the
parallel combination of effective load impedance (RD) and
DrainSource Resistance (rds). During the turnoff, this charge
flow is reversed.
Predicting turnon time is somewhat difficult as the channel
resistance rds is a function of the gatesource voltage. While Cgs
discharges, VGS approaches zero and rds decreases. Since Cgd
discharges through rds, turnon time is nonlinear. During turnoff,
the situation is reversed with rds increasing as Cgd charges.
The above switching curves show two impedance conditions:
1) RK is equal to RD which simulates the switching behavior of
cascaded stages where the driving source impedance is normally the
load impedance of the previous stage, and 2) RK = 0 (low
impedance) the driving source impedance is that of the generator.
Figure 7. Typical Capacitance
ID, DRAIN CURRENT (mA)
2.0
5.0
3.0
7.0
0.5 1.0 3.0 7.05.0 5030
10
20
0.7 2.0 10 20
, FORWARD TRANSFER ADMITTANCE (mmhos)
fs
y
80
120
160
200
1.0 3.0 5.02.0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
4.00
40
6.0 7.0 8.0
0
r , DRAIN-SOURCE ON-STATE
ds(on)
RESISTANCE (OHMS)
Tchannel = 25°C
(Cds IS NEGLIGIBLE)
Cgs
Tchannel = 25°C
VDS = 15 V
Figure 8. Effect of GateSource Voltage
On DrainSource Resistance
Figure 9. Effect of Temperature On
DrainSource OnState Resistance
MPF4392
MPF4393
Cgd
ID = 1.0 mA
VGS = 0
IDSS
= 10
mA
25
mA
50 mA 75 mA 100 mA 125 mA
Tchannel = 25°C
MPF4392, MPF4393
http://onsemi.com
5
IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
, DRAIN-SOURCE ON-STATE
ds(on)
r
20
10
30
40
50
30 40 50 60 70
20
RESISTANCE (OHMS)
0
10
0
1.0
2.0
3.0
4.0
5.0
, GATE-SOURCE VOLTAGE
GS
V
(VOLTS)
6.0
7.0
8.0
9.0
10
70
60
80
90
100
80 90 100 110 120 130 140 150
NOTE 2
The ZeroGateVoltage Drain Current (IDSS), is the
principle determinant of other JFET characteristics.
Figure 10 shows the relationship of GateSource Off
Voltage (VGS(off)) and DrainSource On Resistance
(rds(on)) to IDSS. Most of the devices will be within ±10%
of the values shown in Figure 10. This data will be useful
in predicting the characteristic variations for a given part
number.
For example:
Unknown
rds(on) and VGS range for an MPF4392
The electrical characteristics table indicates that an
MPF4392 has an IDSS range of 25 to 75 mA. Figure 10
shows rds(on) = 52 W for IDSS = 25 mA and 30 W for IDSS
75 mA. The corresponding VGS values are 2.2 V and
4.8 V.
Figure 10. Effect of IDSS On DrainSource
Resistance and GateSource Voltage
Tchannel = 25°C
rDS(on) @ VGS = 0
VGS(off)
MPF4392, MPF4393
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6
PACKAGE DIMENSIONS
TO92 (TO226)
CASE 2911
ISSUE AM
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION XX
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ---
N2.04 2.66
P1.50 4.00
R2.93 ---
V3.43 ---
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
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MPF4392/D
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