BSP 40 ... BSP 43 Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage NPN Power dissipation - Verlustleistung 0.2 6.5 0.1 3 1.65 2.3 2 0.2 3.5 0.3 7 0.7 1.3 W Plastic case Kunststoffgehause 4 1 NPN 3 3.25 Dimensions / Mae in mm 1 = B 2, 4 = C 3 = E SOT-223 Weight approx. - Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BSP 40 BSP 41 BSP 42 BSP 43 Collector-Emitter-voltage B open VCE0 60 V 80 V Collector-Base-voltage E open VCB0 70 V 90 V Emitter-Base-voltage C open VEB0 5V Power dissipation - Verlustleistung Ptot 1.3 W 1) Collector current - Kollektorstrom (dc) IC 1A Peak Collector current - Kollektor-Spitzenstrom ICM 2A Peak Base current - Basis-Spitzenstrom IBM 200 mA Junction temperature - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 60 V ICB0 - - 100 nA IE = 0, VCB = 60 V, Tj = 150/C ICB0 - - 50 :A IEB0 - - 100 nA Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V Collector saturation volt. - Kollektor-Sattigungsspg. 2) 1 IC = 150 mA, IB = 15 mA VCEsat - - 250 mV IC = 500 mA, IB = 50 mA VCEsat - - 500 mV ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 4 01.11.2003 Switching Transistors BSP 40 ... BSP 43 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Base saturation voltage - Basis-Sattigungsspannung 1) IC = 150 mA, IB = 15 mA VBEsat - - 1V IC = 500 mA, IB = 50 mA VBEsat - - 1.2 V hFE 10 - - hFE 40 - 120 hFE 30 - - hFE 30 - - hFE 100 - 300 hFE 50 - - fT 100 MHz - - DC current gain - Kollektor-Basis-Stromverhaltnis 1) - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA BSP 40 BSP 42 BSP 41 BSP 43 Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Thermal resistance - Warmewiderstand junction to ambient air - Sperrschicht zu umgebender Luft RthA 93 K/W 2) junction to soldering point - Sperrschicht zu Lotpad RthS 12 K/W Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren BSP 30, BSP 31, BSP 32, BSP 33 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 5