2N4060-2N4227 Numerical Index aie MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS Sit = = = hes GE | oe) REPLACE. | PAGE Po |B] Ty | Ves | Vee |= hre @ le Veeisan @ Ic 2) _ le TYPE ETS] ment | numper | USE 5 gy AN eel Bl Tal =la @ 25C} S| C | (volts) | (volts) |S | (min) (max) >] (volts) 5 3 5/3 2N4.060 S|] P| Mps6516/ 5-113 AFC] 0.25W] A] 150 30 30] 0 45} 165 1.0M 0.7 10M 45|/E 2N4061 S]) Py) MPS6517) 5-113 AFC] 0.25W) AJ] 150 30 30] 0 90) 330 1.0M 0.7 LOM S90, E 2N4062 S| P| MPS6518] 5-113 AFC] 0.25W] A] 150 30 30] O} 180] 660 1.0M 0.7 10M 180] EF 2N4063 S| N LPA 10W|] C] 200 450 350] 0 40] 160] 0.024 15M] E 2N4064 S| N LPA low] C} 200 300 250] 0 407 160} 0.024 15M] E BN Oe Field Effect Transistors, see Table on Page 1-166 2N4068 S|] N RFA 500M] A] 175 150 150] 0 30 30M 50M] T 2N4069 S| N LPA L.OW}] C] 175 150 150] 0 30 0.034 0.68 50M} T 2N4070 S| N 2N3448] 7-111 LPA 11l5w}] C] 200 100 80] 0 40] 120 5.0A L.5 0A 40], E 10M] 2N407 2 S|] N 9-112 HPA 1.5Wy] Cc} 200 40 20) 0 Lo 254 550M) T 2N4073 S| N 9-112 HPA 1.5W] Cc} 200 40 20} 0 10 25A 550M] T 2N4074 S| N RFA 400M) A} 175 40 40] 0 400] E 2N4075 S|] N 2N3764} 8-273 LPA 30W1 C{ 200 80; 0 30 90 30M | T 2N4076 S| N LPA 30W{ C} 200 80] 0 50] 150 30M} 2N4.080 S| P HPA 300M} A} 200 20 157 0 20 3. 0M 1.06] T 2N4082 thru Field Effect Transistors, see Table on Page 1-166 2N4085 2N4086 S| N] Mps6514] 5-109 AFA 200M] A 12 12] Of 150] 300 2.0M 150] E 2N4087 S| Ni} MPS6515] 5-109 AFA 200M] A 12 12] O} 250) 500 2,.0M 2507 E 2N4087A| S| N] MPS6515] 5-109 AFC 200M] A 12 12] OF} 250] 500 2.0M 250] FE 2N4088 thru Field Effect Transistors, see Table on Page 1-166 2N4095 2N4096 thru Thyristors, see Table on Page 1-154 2N4098 2N4099 S| N DFA 300M| A| 200 55 55] 0} 175 1.0M 150M} T 2N4 100 S| N DFA 400M| A} 200 55 55] O] 175 1.0M 150M} T 2N4101 thru Thyristors, see Table on Page 1-154 2N4103 2N4104 s| | | | Kral 300M| A| 175 60 60] 0 1400} E | 540M] T 2N4106 Gl P MP2060] 7-220 AFA L.6WEA 25 70| 350 5.0M 2N4108 thru Thyristors, see Table on Page 1-154 2Nn4110 2N4111 S| XN LPA 30W] C 100 60| 0 40] 120 2.04 70M; T 2N4112 S| N LPA 30W] C 100 60] O} 100] 300 2.0A 80M | T 2N4113 S| N LPA 30W] C 120 804 0 40] 120 2.04 70M | T 2N4114 S} N LPA 3.0W] A 120 80} O}] 100} 300 2.0A 80M] E 2N4115 S| N LPA 37W) C 120 80] 0 40] 120 2.0A 70M] E 2N4116 S| N LPA 37W 1 C 120 80] 0} 100) 300 2.04 80M] E 2N4117,A thru Field Effect Transistors, see Table on Page 1-166 2N4120A 2N4121 S| P 2N3905 | 5-16 RFA 200Mj, A| 125 40 40] 0 70 LOM 50] E 400M} T 2N4122 S| P 2N3906 | 5-16 RFA 200M] A} 125 40 40; O| 150 LOM 150] E 450M| T 2N4123 Sj N 5-21 HSA 310M} A] 135 40 30] 0 50} 150 2.0M 0.3 SOM 50] E 250M] T 2N4124 S|] N 5-21 HSA 310M} A] 135 30 254 0] 120] 360 2.0M 0.3 50M 120] E 300M] T 2N4125 St P 5-25 HSA 310M] A] 135 30 304 0 50} 150 2.0M 0.4 50M 50] E 200M] T 2N4126 Ss} P 5-25 HSA 310M} A] 135 25 25} O| 120] 360 2.0M 0.4 50M 120] E 250M] T 2N4127 S| N LPA 25Wi C 60 401 0 10 80 0.2A 300M | T 2N4128 S| N LPA 40W| C 60 40] 0 LO 80 0.2A 200M] T 2N4130 S| N LPA 120W] C 80 65] 0 10 60 2.0A 1,.25M] E 2N4131 S| N LPA 60W] C 90 80] 0 10 80 1,0A 150M} E 2N4134 S| N RFA 200M] A} 200 30 30] 0 200] E 350M] T 2N4135 SIN RFA 200M} A] 200 3 30] 0 200] E 425M/ T 2N4136 Pair of 2N2430 and 2N2431 2N4137 S| N PMS 360M} A] 200 40 40] 0 40] 120 LOM 500M{ T 2N4138 S| N CHP 300M] Ay 200 30 30] 0 50 1.0M 20M) T 2N4139 2N4140 SiN 2N4400] 5-34 RFA 300M} A] 125 60 30} 0 120 150M 250M} T 2N4141 S|] N 2N4401 } 5-34 RFA 300M} A} 125 60 30}; 0 300 150M 250M} T 2N4142 St P 2N4402 | 5-39 RFA 300M] Af 125 60 40] 0 120 150M 200M} T 2N4143 S} P 2N4403 | 5-39 RFA 300M] AJ 125 60 40] 0 300 L50M 200M | T 2N4144 thru Thyristors, sce Table on Page 1-154 284149 2na150 | s| n| | cea| swlc 100} so} of 4o] i120] 5.0 15M} T 2N4151 thru Thyristors, see Table on Page 1-154 2N4 204 2N4207 S|] P HSS 300M} A] 200 6.0 6.0] 0 50] 120 10M 650M) T 2N4208 S| P HSS 300M] Aq 200 12 12) 0 30] 120 10M 700M] T 2N4209 S| P HSS 300M} Aj 200 15 15] 0 50} 120 LOM 850M] T 2N4210 Sy N TPA LOOW | C 80 60] 0 20) 100 10A 10M} T 2N4211 S| N LPA 100W} C 100 80] 0 20] 100 1OA 10M! T 2N4212 thru Thyristors, see Table on Page 1-154 2N4216 i i i 1 ' ' 2N4220,A thru Field Effect Transistors, see Table on Page 1-166 2N4.224 2N4225 S|] N LPA 5.0W] Cc 100 40] 0 40] 150 1.0A 150M] T 2N4226 Ss; N LPA 5.0W} C 200 60] 0 40] 150 1.0A 150M} T 2N4227 S| N 2N4400 | 5-34 MSA 300M] A] 125 60 30; 0 150 150M 250M} T 1-146Economy Transistors Uj Y PLASTIC SILICON SMALL-SIGNAL TRANSISTORS Z CURRENT versus VOLTAGE SELECTOR GUIDE Y \e 50 pA -5.0mA 5.0 mA - 25 mA 25 mA- 75 mA 75 mA - 500 mA Vceo Y Volts (Min) PNP NPN PNP NPN PNP NPN Pne NPN Y <10 MPS3639 Y, 10 MPS918 |MPS3640 |2N4264 MPS3646 Yy MPS2711 2N4265 Y MPS2712 MPS706 Yy MPS2713 MPS2369 Y MPS2714 MPS3563 Y MPS2715 Y, MPS2716 Y ' MPS2926 Y 19 MP$3721 Y 20 2N4126 | 2N4124 |MPS3638 | MPS6511] MPS3702 | MPS3706| MPS6562 | MPS6560 Y MPS6519 | 2N5089 | MPS3638A| MPS2923 MPS6563 | MPS6561 Y MPS6579 | MPS2923 MPS6552 Y MPS6580 | MPS2924 MPS6553 Y MPS2925 MPS6554 Y MPS3392 MPS6555 Y MPS3393 MPS6541 Y MPS3394 MPS6543 Y MPS3395 MPS6548 Y MPS3396 MPS6568 Y MPS3397 MPS6569 Y MPS3398 MPS6570 Y MPS6507 Y MPS6514 Y MPS6515 Y, MPS6539 Y MPS6542 Y MPS6546 Y, ' MPS6547 Y 29 MPS6571 Y 30 2N4125 | 2N4123 MPS5834 | MPS3703 | MPs3704 |} MPS6535 | MPS6532 Y 2N5088 MPS3705 Y MPS3707 Y MPS3708 Y MPS3709 Y MPS3710 Y MPS3711 Y MPS3712 Y MPS3713 Y MPS6540 Yy ' MPS6573 Y 39 MPS6574 Y 40 MPs6516 | MPS6575 |2N3905 |2N3903 MpPs6544 | 2N4402 | 2N4400 Y MPS6517 | MPS6576 |2N3906 |2N3904 MPS6545 }2N4403 | 2N4401 Y MPS6518 MPS3693 MPS6533 | MPS6530 Y MPS3694 MpPS6534 | MPS6531 Y MPS3826 Y MPS3827 GY MPS6564 Y MPS6565 Y MPS6566 Y 49 MPS6567 Y >50 2N5086 | 2N4409 Y | 2N5087 | 2N4410 4Economy Transistors PLASTIC SILICON SMALL-SIGNAL TRANSISTORS SELECTOR GUIDES On the following pages the plastic silicon small-signal devices subsequently characterized by complete data sheets have been grouped by applications for which they merit first consideration. GENERAL PURPOSE SWITCHES & AMPLIFIERS All devices in Case 29 (1) QM WN WK WK OE WN MAXIMUM RATING ELECTRICAL CHARACTERISTICS (Ty = 26C unless otherwise noted} Min itching Ti Vceo Yee ceo Eye Veetat) & Vaca @ Ic tr @ tg | Coy | SMitchioa Times gel Type NPN @ Iglmad Volts Vetts PAM} Vettst imax) A ii A Fax) A PNP an a1] 107 207 10] so] 100] 160] seo : " . . re | ow Po] |] 4% m 2N3903 40 6.0 0.05 | 20 | 35 | - | 50}30] 15] - | - 0.20 0.85 10 250 10 4.0 38 [35 [175 |50 | 10/1.0 = | = |} 150) J 0. 30 0.95 50 2N3904 40 6.0 0.05 | 40 | 70 | - | 100}/60] 30) - | - 0. 20 0.85 10 300 10 4.0 38 |35 {200 |s0 | 10/1.0 Tol > |] 300) - |= I= 0.30 0.95 50 2N3905* 40 5.0 0.05 { 30] 40] - | 50} 30/15] -| - 0.25 0. 85 10 200 10 45 35 ]35}200 60 | 10/1.0 = | = [of top| [S| 040 0.95 50 2N3906* 40 5.0 0.05 | 60 | 80 | - | 100/60] 30] - | - 0.25 0.85 10 250 10 4.5 35 | 351225 175 | 10/1.0 = - = | 306) | - [y= 0. 40 0.95 50 2N4123 30 5.0 0. 08 = | = |] 504 7 Jas} - ] -f - 0.30 0.95 50 280 10 4.0 24]13 [125 [11 | 10/1.0 > {> |e, TS Se 2N4124 25 5.0 0.05 | - | - | 120] - | eo] - | -] - 0.30 0.95 50 300 10 4.0 24] 13}tas [11 | 10/10 = - | 366 - | - |) - = 2N4125* 30 4.0 0.05 | - | - | so] -|a5}- | -]- 0. 40 0. 95 50 200 10 4.5 25} 18/140 [15 | 10/10 ~ | > | 150) = J] d= 2N4126* 25 4.0 005 | - | - | 120) - Jeol. | - | - 0. 40 0.95 50 250 10 4.5 25 }18|i40 115 | 10/2 > | > | 366) Sp PP 24400 40 6.0 0.4 =) 2 } =) 40)- | - |s0]}20)} 0.40 0.95 150 200 20 6.5t 15 }20 j225 }30 | 150/15 > FD fos] 2 pS [eis - 0.75 1.20 500 2N4401 40 6.0 0.1 20) 40] - | go]- | - |100/40] 0.40 0. 95 150 250 20 6. 5+ 15 }20 |228 [30 | 150/15 ~ | = |] 2 | > 7277300] ~ 0.75 1,20 500 2N4402* 40 5.0 0.1 - | 30] - | so]- |- {50/20] 0.40 0.95 150 150 20 8. 5+ 15 | 20 |225 {30 | 150/15 Tz] Spm] Tye fs |isol = 0. 75 1.20 500 2N4403% 40 5.0 0.1 30 | 60 | - | 100] ~ | - {100/20} 0.40 0.95 150 200 20 8.5t 15 | 20/225 ]30 | 150/15 ~ | 2 fa] Spe] = | 300! = 0.75 1.20 500 Mps3638*{ 25 4.0 - : 20/30] - | - |2ot} 0.25 1.10 50 100 50 20 20 |70]140 }70 | 300/30 Tyre} eye ye} 1.00 2.00 300 MPS3631 25 4.0 - - | a0 | - | 100} 100) - | - |20r] 0.25 1,10 50 150 50 10 201 70|140|70 | 300/30 TVS SS pays} cis 2.00 2.00 300 MPS3702*) 25 5.0 0.1 - | = - | -]eo} - | -] - 0. 25 - 50 100 50 12 -J-]-4]- : Tr ysyps 300 aT MPS3703*} 30 5.0 OL | - | - } =) -) 30) - ) -)- 0.25 - 50 100 50 12 -J-t-4- - = = ~ =~] 15 - ff - | . MPS3704 30 5.0 0.1 - | =} -] - frog - | - | - 0. 60 - 100 100 50 12 -[-]-]- - >) o) ms) =)]ds| = MPS3705 30 5.0 0.1 : - -| -|so} -] -|- 0. 80 - 100 100 50 +12 -[-]-]- - ryt) sp} a)isd) aT MPS3706 20 5.0 0.1 - - | -| -J}aoj -] -]. 1.00 - 100 100 50 12 -|-]- ]- - >| >|) = feo] > MPS6530 40 5.0 0.05 | - | - | - | 30] -] 40] -]25 0.50 1.00 100 390 50 5.0 -|-]-]- - = = = |] Y2q) 1 = MPS6531 40 5.0 o.os | - | - | - 7] 60} -} 90] -|s0] 0.30 1.00 100 390 50 5.0 ~}-[- ]- - > oe eres eee en en Be MPS6532 30 5.0 0.1 -~]-{]_] ~|-js0]_-]-] 050 1,20 100 390 50 5.0 -f-]- |[- - MPS6533*| 40 4.0 005 | - | - | - | 30} - [40] - [25] 0.50 1.00 100 260 50 6.0 -4-[- [- - = Sp) PS] 20} | = MPS6534*{ 40 4.0 0.05 | - | - | _- | eo] - | 90] - |so} 0.30 1,00 100 260 50 6.0 -f-ft-d- - - ] = =] 370["- |= MPS6S35 30 4.0 0.4 2-2 )-) -)-}se]-]-] 050 1.20 100 260 50 6.0 -|-]- ]- - MPS8565 45 4.0 0.1 - |=] | 40} -]- | -f- 0.40 - 10 200 10 3.5 -J-]- ]- - = |S | Tp 186) MPS6566 45 4.0 0.1 ~tlal i -}-] -]- 0. 40 - 10 200 10 3.5 -[-f- ]- : > | 2 | =] 200) | => c i eb t ho = 300 mA 5-5 NQQ\\[wWwiwWwUw E =e.> vy 39 gppy3y1))y oor2N4125 (siticon) 2n4126 CASE 29(1) (TO-92) MAXIMUM RATINGS Economy Transistors (=\ PNP silicon transistors designed for general purpose switching and amplifier applications and for comple- mentary circuitry with NPN types 2N4123 and 2N4124 Features one-piece, injection-molded plastic package for high reliability. Rating Symbol | 2N4125 | 2N4126| Unit Collector-Emitter Voltage Vero 30 25 Vde Collector-Base Voltage Vop 30 25 Vde Emitter-Base Voltage Vep 4 Vdc Collector Current In 200 mAdc Total Device Dissipation @ Ty = 60C Py 210 mW Total Device Dissipation @ T, = 25C Ph 310 mW Derate above 25C 2.81 mWw/C Operating and Storage Junction Temperature Range THT stg -55 to +135 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient 8 yA 0.357 C/mWw FIGURE 1 CAPACITANCE CAPACITANCE (pF) 01 0.2 03 05 07 10 REVERSE BIAS (VOLTS) 20 30 50 7.0 10 20 30 50 5-25 FIGURE 2 SWITCHING TIMES TIME (ns) 3 Veo = 3V 10.0 F ie/iy = 10 7.0 Weep = O5 10 20 30 5.0 10 a 3 50 100200 tc, COLLECTOR CURRENT (mA)Economy Transistors 2N4125, 2N4126 (continued) ELECTRICAL CHARACTERISTICS (ta = 25C unless otherwise noted) Characteristic Fig. No. | Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* BYog * Vde (lp = 1 made. I, = 0) 2N4125 9 30 _ 2N4126 25 - Collector-Base Breakdown Voltage BVcBo Vdc (Ig = 10 wAde, I, = 0) 2N4125 30 - 2N4126 25 - Emitter-Base Breakdown Voltage BVEBO Vde a, = 10 pAdc, Io =) 4 - Collector Cutoff Current logo nAdc Vop = 20 Vdc, Ine 0) ~ 50 Emitter Cutoff Current leBo nAde Vor = 3 vde, I, = 0) - 50 ON CHARACTERISTICS DC Current Gain* 9 hee* _ (I, = 2 mAdc, Voge = I Vdc) 2N4125 50 150 2N4126 120 360 (i, = 50 mAdc, Vi. = 1 Vdc) 2N4125 25 - c cE 2N4126 60 ~ Collector-Emitter Saturation Voltage* 16. 11 Vorisat) Vde Me = 50 mAdc, 15 = mAdc) _ 0.4 Base-Emitter Saturation Voitage* 11 Vv. * Vac (Ig = 50 mAde, I, = 5 mAdc) BE(sat) - 0.95 SMALL SIGNAL CHARACTERISTICS High-Frequency Current Gain i Mee} ~ Mg = 10 mAdc, Vig = 20 Vde, f= 100 MHz) 2N4125 2.0 - 2N4126 2.5 = Current-Gain Bandwidth Product fp MHz (lg = 10 mAdc, Vor = 20 Vdc, f = 100 MHz) 2N4125 200 ~ 2N4126 250 - Output Capacitance 1 Cob pF Voz = Vde, lb = 0, f = 100 kHz) - 4.5 Input Capacitance 1 Cb pF Wor = 0.5 Vde. Io = 0, f = 100 kHz) - 10 $Small-Signal Current Gain 5 bee - de = 2 mAdc. Vor = 1 Vdc, f= 1 kHz) 2N4125 50 200 2N4126 120 480 Noise Figure 3,4 NF aB (Ig = 100 Adc. Vor = 5 Vde, Rg = 1k ohm, Noise Bandwidth = 10 Hz to 15.7 kHz) 2N4125 ~ 5.0 2N4126 ~ 4.0 SWITCHING CHARACTERISTICS Characteristic Fig. No. } Symbol Typ Unit Delay Time Voc = 3 Vdc, VBE (oft) = 0.5 Vdc, 2 tg 25 ns Rise Time Ig = 10 mAdc. I, = 1 mAde 2 t. 18 ns Storage Time Veco = 3 Vdc, To = 10 mAdc, 2 ts 140 ns Fall Time Tp1 = Ibe = 1 mAde 2 t, 15 ns *Pulse Test: Pulse Width = 300 sec, Duty Cycle = 2% 5-26Economy Transistors 2N4125, 2N4126 (continued) AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE Vee = 5 Vde, Ta = 25C 50 FIGURE 3 FREQUENCY VARIATIONS , FIGURE 4 SOURCE RESISTANCE x 1 40 10 SOURCE =1ma a @ 80 w 30 Pa Zz > = = 60 B 2B 2 20 2 s = 40 SOURCE RESISTANCE = 2 10 Ig = 100 yA SOURCE RESISTANCE = 2 kG? 20 lo = 50 yA " 0 0 O1 02 04 10 20 40 1 20 40 100 Ol 02 04 0 20 40 10-20 40100 f, FREQUENCY (kHz) Fig, SOURCE RESISTANCE (K{2) h PARAMETERS Vee = 10 V, f = 1 kHz, Th = 25C FIGURE 5 CURRENT GAIN 100 FIGURE 6 OUTPUT ADMITTANCE 10 50 30 20 hy, CURRENT GAIN hee, OUTPUT ADMITTANCE (,mhos) 10 7.0 5.0 01 0.2 05 10 20 5.0 10 ol 0.2 05 10 20 5.0 10 le, COLLECTOR CURRENT (mA) le, COLLECTOR CURRENT (mA) FIGURE 7 ~ INPUT IMPEDANCE FIGURE 8 VOLTAGE FEEDBACK RATIO Die, INPUT IMPEDANCE (k{2} hye, VOLTAGE FEEDBACK RATIO (X 10) Ol 0.2 05 10 2.0 5.0 10 0.1 0.2 05 10 20 5.0 10 Ic, COLLECTOR CURRENT (mA) ie, COLLECTOR CURRENT (mAv 5-27Economy Transistors 2N4125, 2N4126 (continued) STATIC CHARACTERISTICS FIGURE 9 NORMALIZED CURRENT GAIN Ty = +125C Ty = +25C Ty = 55C hee, NORMALIZED CURRENT GAIN 0.1 02 0.3 05 07 10 20 3.0 50 70 10 20 30 so. 70) 100 200 te, COLLECTOR CURRENT (mA) FIGURE 10 COLLECTOR SATURATION REGION oo 2 > we Vee, COLLECTOR EMITTER VOLTAGE (VOLTS} n 02 03 0 07 01 0.2 0.3 05 #07 10 20 3.0 0 70 (a, BASE CURRENT (mA) FIGURE 11 ON VOLTAGES FIGURE 12 TEMPERATURE COEFFICIENTS Veetrat} @ le/te = 10 for Voce (sat) +25C TO + Vee ON VOLTAGE (VOLTS) COEFFICIENT (m/C) 10020 5.0 10 20 50 100 ~=.200 0 20 40 60 8 100 120 140 160 180 Ic, COLLECTOR CURRENT (mA) Ie, COLLECTOR CURRENT (mA) 5-28