TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor TRANSZorb(R) Transient Voltage Suppressors FEATURES * Plastic MELF package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional polarity only * 400 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % * Excellent clamping capability * Very fast response time DO-213AB (GL41) * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS VBR 6.8 V to 200 V PPPM 400 W, 200 W PD 1.0 W IFSM 40 A TJ max. 150 C Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MECHANICAL DATA Case: DO-213AB (GL41) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Blue band denotes the cathode which is positive with respect to the anode under normal TVS operation MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 s waveform (1) (fig. 1) Power dissipation on infinite heatsink at TL = 75 C SYMBOL VALUE UNIT PPPM 400 W PD 1.0 W Peak pulse current with a 10/1000 s waveform (1) (fig. 3) IPPM See next table A Peak forward surge current, 8.3 ms half sine-wave uni-directional only (2) IFSM 40 A Maximum instantaneous forward voltage at 25 A for uni-directional only Operating junction and storage temperature range VF 3.5 V TJ, TSTG - 55 to 150 C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2. Rating is 200 W above 91 V A (2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum Revision: 13-Mar-12 Document Number: 88403 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR (1) (V) MIN. MAX. TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) TGL41-6.8A 6.45 7.14 10 5.80 TGL41-7.5A 7.13 7.88 10 6.40 TGL41-8.2A 7.79 8.61 10 7.02 TGL41-9.1A 8.65 9.55 1.0 7.78 TGL41-10A 9.5 10.5 1.0 8.55 TGL41-11A 10.5 11.6 1.0 9.40 TGL41-12A 11.4 12.6 1.0 10.2 TGL41-13A 12.4 13.7 1.0 11.1 TGL41-15A 14.3 15.8 1.0 12.8 TGL41-16A 15.2 16.8 1.0 13.6 TGL41-18A 17.1 18.9 1.0 15.3 TGL41-20A 19.0 21.0 1.0 17.1 TGL41-22A 20.9 23.1 1.0 18.8 TGL41-24A 22.8 25.2 1.0 20.5 TGL41-27A 25.7 28.4 1.0 23.1 TGL41-30A 28.5 31.5 1.0 25.6 TGL41-33A 31.4 34.7 1.0 28.2 TGL41-36A 34.2 37.8 1.0 30.8 TGL41-39A 37.1 41.0 1.0 33.3 TGL41-43A 40.9 45.2 1.0 36.8 TGL41-47A 44.7 49.4 1.0 40.2 TGL41-51A 48.5 53.6 1.0 43.6 TGL41-56A 53.2 58.8 1.0 47.8 TGL41-62A 58.9 65.1 1.0 53.0 TGL41-68A 64.6 71.4 1.0 58.1 TGL41-75A 71.3 78.8 1.0 64.1 TGL41-82A 77.9 86.1 1.0 70.1 TGL41-91A 86.5 95.5 1.0 77.8 TGL41-100A 95.0 105 1.0 85.5 TGL41-110A 105 116 1.0 94.0 TGL41-120A 114 126 1.0 102 TGL41-130A 124 137 1.0 111 TGL41-150A 143 158 1.0 128 TGL41-160A 152 168 1.0 136 TGL41-170A 162 179 1.0 145 TGL41-180A 171 189 1.0 154 TGL41-200A 190 210 1.0 171 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (2) All terms and symbols are consistent with ANSI/IEEE C62.35 MAXIMUM REVERSE LEAKAGE AT VWM ID (A) MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) MAXIMUM TEMPERATURE COEFFICENT OF VBR (%/C) 1000 500 200 50.0 10.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 38.1 35.4 33.1 29.9 27.6 25.6 24.0 22.0 18.9 17.8 15.9 14.4 13.1 12.0 10.7 9.7 8.8 8.0 7.4 6.7 6.2 5.7 5.2 4.7 4.3 3.9 3.5 3.2 1.46 1.32 1.21 1.12 0.97 0.91 0.85 0.81 0.73 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 103 113 125 137 152 165 179 207 219 234 246 274 0.060 0.064 0.068 0.071 0.076 0.078 0.081 0.084 0.087 0.089 0.091 0.093 0.095 0.097 0.099 0.100 0.101 0.102 0.103 0.104 0.104 0.105 0.106 0.107 0.107 0.108 0.108 0.109 0.109 0.110 0.110 0.110 0.111 0.111 0.111 0.111 0.111 ORDERING INFORMATION (Example) PREFERRED PIN UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE TGL41-6.8A-E3/96 0.134 96 1500 7" diameter plastic tape and reel TGL41-6.8A-E3/97 0.134 97 5000 13" diameter plastic tape and reel Revision: 13-Mar-12 Document Number: 88403 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 10 000 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 C CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 10 Measured at Zero Bias 1000 TGL41-6.8 TGL91A 1 TGL41-100 0.1 0.1 s 1.0 s TGL200A 10 s 100 s 1.0 ms Measured at Stand-Off Voltage VWM 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 10 ms 1 10 td - Pulse Width 1000 Fig. 4 - Typical Junction Capacitance 100 1.00 PD - Power Dissipation (W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentace (%) 100 VBR - Breakdown Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve 75 0.75 50 0.50 25 0 0.25 0 0 25 50 75 100 125 150 175 200 0 TJ - Initial Temerature (C) 100 TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. td 0 0 1.0 2.0 t - Time (ms) Fig. 3 - Pulse Waveform Revision: 13-Mar-12 3.0 75 100 125 150 175 200 4.0 50 Peak Forward Surge Current (A) Peak Value IPPM 50 Fig. 5 - Power Derating Curve 150 tr = 10 s 25 TL - Lead Temerature (C) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature IPPM - Peak Pulse Current, % IRSM Uni-Directional 10 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 40 30 20 10 0 1 10 100 Number of Cycles at 60 Hz Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current Uni-Directional Only Document Number: 88403 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-213AB (GL41) Mounting Pad Layout Solderable Ends 1st Band D2 0.022 (0.56) 0.018 (0.46) 0 D2 = D1 + - 0.008 (0.20) 0.138 (3.5) MAX. D1 = 0.105 0.095 (2.67) (2.41) 0.022 (0.56) 0.018 (0.46) 0.205 (5.2) 0.185 (4.7) 0.118 (3.0) MIN. 0.049 (1.25) MIN. 0.238 (6.0) REF. 1st Band Denotes Type and Positive End (Cathode) Revision: 13-Mar-12 Document Number: 88403 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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