FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25mx1500m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels. Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET 55% Power-Added Efficiency FPD750SOT89CE: RoHS Compliant (Directive 2002/95/EC) Applications InGaP HBT SiGe BiCMOS Si BiCMOS 25dBm Output Power (P1dB) 18dB Small-Signal Gain (SSG) 0.6dB Noise Figure 39dBm OIP3 SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT Drivers or Output Stages in PCS/Cellular Base Station Transmitter Amplifiers High Intercept-point LNAs WLL, WLAN, and Other Types of Wireless Infrastructure Systems. RF MEMS LDMOS Parameter Min. P1dB Gain Compression Small-Signal Gain (SSG) PAE Noise Figure (NF) 23 16.5 Specification Typ. 25 18 50 0.8 0.6 OIP3 36 38 Saturated Drain-Source Current (IDSS) Maximum Drain-Source Current (IMAX) Transconductance (GM) Gate-Source Leakage Current (IGSO) 185 39 230 375 200 1 Max. 1.0 Unit dBm dB % dB dB dBm 280 15 dBm mA mA ms A Condition VDS =5V, IDS =50% IDSS VDS =5V, IDS =50% IDSS VDS =5V, IDS =50% IDSS, POUT =P1dB VDS =5V, IDS =50% VDS =5V, IDS =25% VDS =5V, IDS =50% IDSS. Matched for optimal power. Matched for best IP3 VDS =1.3V, VGS =0V VDS =1.3V, VGS +1V VDS =1.3V, VGS =0V VGS =-5V Pinch-Off Voltage (VP) |0.7| |1.0| |1.3| V VDS =1.3V, IDS =0.75mA Gate-Source Breakdown Voltage |12| |16| V IGS =0.75mA (VBDGS) Gate-Drain Breakdown Voltage |12| |16| V IGD =0.75mA (VBDGD) Thermal Resistivity (JC) * 83 C/W *Note: TAMBIENT =22C, RF specifications measured at f=1850MHz using CW signal (except as noted). RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS110331 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 12 FPD750SOT89E Absolute Maximum Ratings1 Rating Unit Drain-Source Voltage (VDS) (-3V<VGS <0.5V) Parameter 8 V Gate-Source Voltage (VGS) (0V<VDS <+8V) -3 V Drain-Source Current (IDS) (For VDS >2V) IDSS Gate Current (IG) (Forward or reverse) 7.5 mA RF Input Power (PIN) (Under any acceptable bias state) 175 mW Channel Operating Temperature (TCH) (Under any acceptable bias state) 175 C -55 to 150 C 2 Storage Temperature (TSTG) (Non-Operating Storage) Total Power Dissipation (PTOT)3, 4 Gain Compression (Under bias conditions) 1.8 W 5 dB Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Simultaneous Combination of Limits6 (2 or more max. limits) Notes: 1T AMBIENT =22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device. 2 Max. RF input limit must be further limited if input VSWR>2.5:1. 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously. 4 Total Power Dissipation (PTOT) defined as (PDC +PIN)-POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power. Total Power Dissipation to be de-rated as follows above 22C: PTOT =1.8-(0.012W/C)xTPACK, where TPACK =source tab lead temperature above 22C. (Coefficient of de-rating formula is Thermal Conductivity.) Exampe: For a 65C carrier temperature: PTOT =1.8W-(0.012x(65-22))=1.28W Biasing Guidelines Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that gate bias is applied before drain bias, otherwise the pHEMT may be induced to self-oscillate. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices. For standard Class A operation, an operating point of 50% of IDSS is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. A class A/B Bias of 25% to 33% of IDSS to achieve better OIP3 and Noise Figure performance is suggested. 2 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110331 FPD750SOT89E Frequency Response Biased @ 5V 50%I DSS 35 Biased @ 5V, 100mA 1.2 MSG S21 No ise Fig ure (d B) Mag S21 & MSG 30 25 20 15 1 0.8 0.6 0.4 10 N.F. (dB) 0.2 5 5.7 5.3 4.9 4.5 4.1 8 3.7 7.5 3.3 6.5 2.9 5.5 2.5 4.5 2.1 3.5 1.7 2.5 1.3 1.5 0.5 0.5 0.9 0 0 Freq ue n cy ( GHz) Frequency (GHz) Note: Device tuned for minimum noise figure. Temperature Response B iased @ 5V,50%ID SS D ata t ake n o n Ev al Bo ard at 1.85GH z Biased @ 5V, 33% IDSS Data taken on Eval board @ 1.85GHz T emp erature (C ) N.F. 0.60 (dB) 90 80 70 60 50 40 0.40 30 90 80 70 60 50 40 30 20 0 10 -10 -20 14.0 0.80 20 15.0 1.00 10 SSG (dB) P1dB (dBm) 1.20 0 16.0 1.40 -10 17.0 1.60 -20 SSG (d B) 18.0 1.80 No ise Fig ure (d B) 26.0 25.0 24.0 23.0 22.0 21.0 20.0 19.0 18.0 17.0 16.0 19.0 P1dB ( dBm ) 20.0 Temp erature (C) Note: Data taken on evaluation board tuned for maximum power. Acheivable noise figure is lower when optimized. DS110331 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 12 FPD750SOT89E Typical Tuned RF Performance Power Transfer Characteristic VDS = 5V I DS = 50% I DSS at f = 1. 85 GHz Drai n E ffi ciency and P AE 26 .0 3.50 60. 0% Output Power (dBm) 2.50 24 .5 2.00 24 .0 1.50 23 .5 1.00 23 .0 0.50 22 .5 0.00 PA E (% ) 25 .0 -0.50 22 .0 4 5 6 7 60 .0% PAE 3.00 Com p Po int Gain Compression (dB) Po ut (d Bm ) 8 9 10 11 E ff . 50. 0% 50 .0% 40. 0% 40 .0% 30. 0% 30 .0% 20. 0% 20 .0% 10. 0% 12 D ra in Ef fic ien c y (% 25 .5 10 .0% 1 3 5 Input Power (dBm) 7 9 11 In pu t P o we r (d B m ) Note: Typical power and efficiency is shown above. The devices were biased nominally at VDS =5V, IDS =50% of IDSS, at a test frequency of 1.85GHz. The test devices were tuned (input and output tuning) for maximum output power at 1dB gain compression. Typical I nterm odulation Perform ance V DS = 5V IDS = 50% I DS S at f = 1.85GHz DC IV Curves FPD750SOT89 3rd s (d Bc) -2 8. 00 16 -3 3. 00 14 -3 8. 00 Drain-Sour ce Current (A) 0.25 18 3rd Order I M P roducts (dBc) Pout ( dBm) Output Power (dBm) 0.30 -2 3. 00 20 0.20 VG=-1.50 VG=-1.25V VG=-1.00V VG=-0.75V VG=-0.50V VG=-0.25V VG=0V 0.15 0.10 12 0.05 10 -4 3. 00 -7 .1 -6.0 -5 .0 -4. 0 -3. 0 -2.1 -1.0 0.0 1.0 1 .9 I nput Power (dBm) Note: pHEMT devices have enhanced intermodulation performance. This yields OIP3 values of about P1dB+14dBm.This IMD enhancement is affected by the quiescent bias and the matching applied to the device. 4 of 12 0.00 0.0 0.5 1. 0 1. 5 2. 0 2. 5 3. 0 3. 5 4. 0 4. 5 5.0 5.5 6.0 Drain-Source Voltage (V) Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the IV curves presented above). Setting the VDS >1.3V will generally cause errors in the current measurements, even in stabilized circuits. 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110331 FPD750SOT89E Typical Output Plane Power Contours (VDS =5V, IDS =50% IDSS) FPD750SOT89 POWER CONTUORS 900MHz 2.0 0.6 0.8 1.0 Swp Max 151 0. 3 .0 4 4.0 5.0 0.2 10.0 5.0 4.0 3 .0 2.0 1.0 0.8 0.6 0 0.2 0. 4 10.0 19dBm 25dBm 20dBm -10.0 -0.2 21dBm -5 .0 .0 Swp Min 1 -1.0 -0.8 -0.6 -2.0 .0 23dBm .4 -3 -0 22dBm -4 24dBm 1850 MHz 900 MHz Contours swept with a constant input power, set so that optimum P1dB is achieved at the point of output match. Input (Source plane) s: 0.50142.8 0.37+j0.35 (normalized) 18.5-j17.5 Nominal IP3 performance is obtained with this input plane match, and the output plane match as shown. Contours swept with a constant input power, set so that optimum P1dB is achieved at the point of output match. Input (Source plane) s: 0.7936.9 1.0+j2.6 (normalized) 50+j130 Nominal IP3 performance is obtained with this input plane match, and the output plane match as shown. Typical Scattering Parameters (50 System) FPD750SOT8 9 5V / 5 0%IDSS 2. 0 0 4. 5 .0 3. 0 .2 6 GHz 10 .0 10.0 4.0 5.0 3.0 2.0 4 GHz 1.0 0.8 0.6 0.4 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0 0. 4 0.4 7 G Hz 5 GHz 3 GHz 2 GH z -10. 0 2 1 G Hz .0 - 0. -4 .0 -4 .0 S22 .0 -2 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. -1.0 6 .0 -2 Swp Min 0.5GHz -0. 8 -1.0 -0 .8 4 -0 . .0 -0 .6 -3 DS110331 1 GHz . -0 - - 5. 0 S11 1.5 GHz 3. 0 .4 -0 -5 2 GHz -1 0. 0 0 .2 2.5 GHz 2 - 0. 0 0 4. 0 5. 10.0 3 GHz 0.2 0 .8 2. 0 .0 3 7 GHz 4 GHz 3.5 GHz 0 6 0. 6 0. 6 GHz 5 GHz S wp Max 8GHz 0. 4 0 .8 1.0 Swp Max 8GHz 1.0 FP D750SOT8 9 5V / 50%IDSS S wp Min 0.5GHz 5 of 12 FPD750SOT89E Reference Design (0.9GHz) Parameter Typical Unit Gain P1dB OIP3 23 23.5 35 dB dBm dBm NF S11 S22 VD 0.6 -5 -20 5 dB dB dB V VG -0.4 to -0.6 V ID 100 mA Note: OIP3 measured at 10dBm per tone. Evaluation Board Layout Vg Vd 33 pF 0 .0 1uF 3 3pF 20O Lg 3 3pF Q1 L1 0.01uF + 1.0uF + Ld L2 33 pF 0.63" C2 C1 1.45" Component Values Component Lg Ld L1 L2 C1 C2 Value 56nH 56nH 12nH 6.8nH 0.5pF 1.2pF Description LL 1608 Toko chip inductor LL 1608 Toko chip inductor LL 1608 Toko chip inductor LL 1608 Toko chip inductor ATC 600S chip capacitor ATC 600S chip capacitor FPD750SOT89 EVAL Board -Vg Schematic 0.01uF @ 0.9GHz 33pF 6 of 12 1.0uF 0.01uF 33pF 20 Ohm Evaluation board material: 31mil thick FR4 with 1/2oz. Cu on both sides. DC-blocking capacitors are ATC series 600S. A tantalum 1.0F is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 chip resistor from Vishay is used on the gate DC bias line for stability. Vd 33pF RF IN 56 nH L1 C1 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 56 nH L2 C2 33pF RF OUT DS110331 FPD750SOT89E Reference Design (1.85GHz) Parameter Typical Unit Gain P1dB OIP3 17.2 24 35 dB dBm dBm NF S11 S22 VD 0.7 -5 -10 5 dB dB dB V VG -0.4 to -0.6 V ID 100 mA Note: OIP3 measured at 10dBm per tone. Evaluation Board Layout Vg Vd 33p F 0.01u F 3 3pF 2 0O Lg 33 pF Q1 C1 0.01u F + 1.0uF + Ld L2 3 3pF 0.63" C2 L1 1.45" Component Values Component Lg Ld L1 L2 C1 C2 Value 27nH 27nH 6.8nH 1.8nH 2.7pF 0.5pF Description LL 1608 Toko chip inductor LL 1608 Toko chip inductor LL 1608 Toko chip inductor LL 1608 Toko chip inductor ATC 600S chip capacitor ATC 600S chip capacitor FPD750SOT89 EVAL Board -Vg Schematic 0.01uF @ 1.85GHz 33pF DS110331 1.0uF 0.01uF 33pF 20 Ohm Evaluation board material: 31mil thick FR4 with 1/2oz. Cu on both sides. DC-blocking capacitors are ATC series 600S. A tantalum 1.0F is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 chip resistor from Vishay is used on the gate DC bias line for stability. Vd 33pF 27 nH C1 27 nH L2 33pF RF OUT RF IN L1 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. C2 7 of 12 FPD750SOT89E Reference Design (2.4GHz to 2.6GHz) Frequency 2.4 2.5 2.6 Unit SSG P1dB OIP3 15.4 24.3 34.0 15.2 24.3 35.0 15.0 24.4 34.0 dB dBm dBm NF S11 S22 VD 0.95 -5.0 -9.5 0.95 -5.5 -10.0 5 1.0 -6.0 -10.0 dB dB dB V VG -0.4 to -0.6 V ID 100 mA Note: OIP3 measured at 10dBm per tone. Evaluation Board Layout Vg Vd 33pF 0.01uF 33pF 20 O Lg 33pF C1 Q1 0.01uF + 1.0uF + Ld Tab L1 33pF 0.63" C2 1.45" Component Values Component Lg Ld L1 C1 C2 Tab Value 22nH 22nH 8.2nH 2.0pF 0.8pF Description LL 1608 Toko chip inductor LL 1608 Toko chip inductor LL 1005 Toko chip inductor ATC 600S chip capacitor ATC 600S chip capacitor Copper tab (no component) FPD750SOT89 EVAL Board -Vg Schematic 0.01uF @2.4 to 2.6GHz 33pF 8 of 12 1.0uF 0.01uF 33pF 20 Ohm Evaluation board material: 31mil thick FR4 with 1/2oz. Cu on both sides. DC-blocking capacitors are ATC series 600S. A tantalum 1.0F is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20 chip resistor from Vishay is used on the gate DC bias line for stability. Vd 33pF 22 nH 22 nH C1 33pF RF OUT RF IN L1 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. C2 DS110331 FPD750SOT89E Statistical Sample of RF Performance No ise F igu re Small Signal Gain 18000 16000 6000 14000 5000 Output Pow er at 1dB gain Compression 1.3 1.22 1.14 NF ( dB) 10000 Output 3rd Order Intercept Point 9000 8000 10000 7000 5000 4000 40 38 37 35 34 32 0 31 24.8 24.2 1000 29 P1dB (dBm) 23.6 23 22.4 2000 21.8 0 21.2 3000 20.6 2000 28 4000 6000 26 6000 25 Frequency 8000 20 Frequency 1.06 19.8 SSG (dB) More 19 19.4 18.6 18.2 17.8 17 17.4 16.6 16.2 15.8 15 15.4 0 0.98 0 0.5 1000 2000 0.9 2000 4000 0.82 6000 3000 0.74 8000 4000 0.66 10000 0.58 Frequency Frequency 12000 OIP3 - (dBm) Note: The devices were tested by a high-speed automatic test system in a matched circuit based on an evaluation board design. This circuit is a dual-bias, single-pole, low-pass topology, and the devices were biased at VDS =4.0V, IDS =100mA, test frequency=2.0GHz. DS110331 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 9 of 12 FPD750SOT89E S-Parameters (Biased @ 5V, 50% IDSS) FREQ[GHz] S11m S11a S21m S21a S12m S12a S22m S22a 0.050 0.998 -5.6 19.465 172.4 0.003 94.4 0.448 -8.1 0.300 0.959 -30.9 16.931 154.5 0.016 77.5 0.438 -20.6 0.550 0.868 -52.5 15.126 137.7 0.028 64.7 0.406 -37.7 0.800 0.809 -72.3 13.452 124.3 0.038 55.2 0.379 -51.8 1.050 0.755 -90.2 12.024 112.1 0.046 47.2 0.352 -64.3 1.300 0.713 -106.5 10.762 101.4 0.052 40.7 0.324 -74.4 1.550 0.679 -121.5 9.707 91.8 0.057 35.1 0.294 -83.0 1.800 0.653 -135.6 8.828 82.7 0.062 29.2 0.267 -91.1 2.050 0.634 -148.8 8.080 74.1 0.066 24.3 0.241 -98.8 -106.3 2.300 0.62 -161.8 7.441 66.0 0.069 19.4 0.214 2.550 0.613 -173.5 6.890 58.1 0.073 14.9 0.188 -115.6 2.800 0.603 175.0 6.407 50.2 0.076 10.5 0.169 -125.9 3.050 0.611 164.6 5.948 43.0 0.078 6.0 0.14 -140.7 3.300 0.614 154.5 5.557 35.7 0.080 2.2 0.123 -156.6 -175.2 3.550 0.619 145.1 5.194 28.7 0.082 -2.4 0.113 3.800 0.627 136.2 4.873 21.9 0.084 -6.0 0.11 164.9 4.050 0.636 127.9 4.594 15.4 0.085 -10.3 0.114 146.6 4.300 0.659 119.7 4.345 8.8 0.086 -13.3 0.133 132.4 4.550 0.663 110.6 4.138 1.8 0.089 -17.5 0.138 115.2 4.800 0.666 104.1 3.892 -4.8 0.090 -21.4 0.153 107.8 5.050 0.68 96.9 3.690 -11.0 0.091 -25.1 0.167 99.7 5.300 0.695 89.7 3.511 -17.4 0.092 -29.2 0.182 92.6 5.550 0.706 82.6 3.342 -23.7 0.093 -32.6 0.196 85.4 5.800 0.719 75.9 3.190 -30.1 0.094 -36.8 0.208 78.5 6.050 0.732 69.2 3.041 -36.5 0.095 -41.0 0.222 71.6 6.300 0.741 62.7 2.898 -42.8 0.096 -45.1 0.237 65.0 6.550 0.754 56.9 2.766 -49.1 0.096 -49.1 0.252 58.0 6.800 0.766 51.1 2.634 -55.3 0.095 -53.0 0.27 51.3 7.050 0.779 45.4 2.507 -61.6 0.095 -57.4 0.291 44.6 7.300 0.793 39.9 2.387 -67.8 0.095 -61.4 0.314 38.5 7.550 0.809 34.4 2.267 -73.9 0.093 -65.7 0.337 33.2 28.4 7.800 0.823 28.9 2.151 -79.9 0.092 -70.0 0.363 8.050 0.839 23.6 2.036 -85.7 0.091 -74.0 0.387 24.3 8.300 0.851 18.8 1.925 -91.3 0.089 -78.3 0.412 20.3 8.550 0.86 14.2 1.825 -96.7 0.087 -81.9 0.436 17.1 8.800 0.871 9.8 1.728 -102.0 0.084 -85.5 0.457 14.0 9.050 0.881 5.7 1.640 -106.9 0.083 -89.4 0.477 11.0 9.300 0.889 2.0 1.563 -111.8 0.082 -93.9 0.496 8.6 9.550 0.895 -1.5 1.494 -116.6 0.081 -98.4 0.514 6.0 9.800 0.904 -4.6 1.433 -121.2 0.080 -101.8 0.531 3.1 10.050 0.913 -8.3 1.384 -126.5 0.078 -107.1 0.548 -0.1 10.300 0.909 -12.0 1.323 -132.0 0.075 -111.9 0.552 -3.6 10.550 0.903 -15.2 1.264 -136.8 0.074 -116.6 0.557 -6.7 10 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110331 FPD750SOT89E Part Identification Package Outline Dimensions in millimeters (mm) Tape Dimensions and Part Orientation Tape & Reel on this material is in accordance to EIA-481-1 except where exceptions are identified. Device Footprint Units in inches DS110331 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 11 of 12 FPD750SOT89E Preferred Assembly Instructions This package is compatible with both lead-free and leaded solder reflow processes as defined within IPC/JEDEC J-STD-020C. The maximum package temperature should not exceed 260C. Handling Precautions To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. ESD Rating These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 AND MIL-HDBK-263. MSL Rating The device has an MSL rating of Level 2. To determine this rating, preconditioning was performed to the device per the Pb-free solder profile defined within IPC/JEDEC J-STD-020C, Moisture/Reflow sensitivity classification for non-hermetic solid state surface mount devices. Application Notes and Design Data Application Notes and design data including S-parameters, noise parameters, and device model are available on request from www.rfmd.com. Reliability An MTTF of 4.2 million hours at a channel temperature of 150C is achieved for the process used to manufacture this device. Disclaimers This product is not designed for use in any space-based or life-sustaining/supporting equipment. Ordering Information 12 of 12 Description Ordering Code RoHS-Compliant Packaged pHEMT with enhanced passivation (recommended for new designs) FPD750SOT89E Packaged pHEMT evaluation board (2.0GHz) FPD750SOT89PCK Delivery Quantity Ordering Code Reel of 1000 FPD750SOT89E Reel of 100 FPD750SOT89ESR Bag of 25 FPD750SOT89ESQ Bag of 5 FPD750SOT89ESB 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110331