UNISONIC TECHNOLOGIES CO.,LTD.
XL/ML1225 SCR
www.unisonic.com.tw 1
Copyright © 2005 Unisonic Technologies Co.,LTD. QW-R301-003,D
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The XL1225/ML1225 silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts are
intended for low cost high volume applications.
TO-92
1
*Pb-free plating product number:
XL1225L/ML1225L
PIN CONFIGURATION
PIN NO. PIN NAME
1 CATHODE
2 GATE
3 ANODE
ORDERING INFORMATION
Order Number
Normal Lead free
Package Packing
XL1225-T92-B XL1225L-T92-B TO-92 Tape Box
XL1225-T92-K XL1225L-T92-K TO-92 Bulk
ML1225-T92-B ML1225L-T92-B TO-92 Tape Box
ML1225-T92-K ML1225L-T92-K TO-92 Bulk
XL/ML1225 SCR
UNISONIC TECHNOLOGIES CO., LTD 2
www.unisonic.com.tw QW-R301-003,D
ABSOLUATE MAXIUM RATINGS (Ta= 25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITION RATINGS UNIT
XL1225 400
Repetitive Peak
Off-State Voltage ML1225 VDRM TJ =40 ~ 125°C
RGK =1kΩ 300 V
On-State Current IT(RMS) Tc=40°C 0.8 A
Average On-State Current IT(AV) Half Cycle=180,Tc=40°C 0.5 A
Peak Reverse Gate Voltage VGRM IGR=10uA 1 V
Peak Gate Current IGM 10us Max. 0.1 A
Gate Dissipation PG(AV) 20ms Max. 150 mW
Operating Temperature TJ +125 °C
Storage Temperature TSTG -40 ~ +150 °C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70 ℃operating temperature range
and assured by design from –20℃~85℃.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Off State Leakage Current IDRM @VDRM(RGK=1KΩ), TJ =125°C 0.1 mA
Off State Leakage Current IDRM @VDRM(RGK=1KΩ), TJ =25°C 1.0 µA
On State Voltage VT
A
T IT=0.4A
A
T IT=0.8A
1. 4
2.2 V
On State Threshold Voltage VT(TO) T
J =125°C 0.95 V
On State Slops Resistance Rt TJ =125°C 600 m
Gate Trigger Current IGT V
D=7V 200 µA
Gate Trigger Voltage VGT V
D=7V 0.8 V
Holding Current IH R
GK=1KΩ 5 mA
Latching Current IL R
GK=1KΩ 6 mA
Critical Rate of Voltage Rise DV/DT VD=0.67*VDRM(RGK=1KΩ),TJ =125℃ V/µs
Critical Rate of Current Rise DV/DT IG=10mA, dIG/dt=0.1A/µs,TJ =125℃ A/µs
Gate Controlled Delay Time TGD I
G=10mA, dIG/dt=0.1A/µs 2.2 µs
Commutated Turn-off Time TG TJ =85°C, VD=0.67*VDRM
VR=35V, IT=IT(AV)
200 µs
CLASSIFICATION OF IGT
RANK B C AA AB AC AD
RANGE 50-100µA 100-200µA 8-15µA 15-20µA 20-25µA 25-50µA
XL/ML1225 SCR
UNISONIC TECHNOLOGIES CO., LTD 3
www.unisonic.com.tw QW-R301-003,D
■ TYPICAL CHARACTERICS
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
0.1
1
10
IT,INSTANTANEOUS ON-STATE CURRENT (A)
VT,INSTANTANEOUS ON-STATE VOLTAGE (V)
Figure 5 . Typical On-S tate Characte ristics
MAXIMUM @Tj=25℃
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this docum ent does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
