CPH5815
No.7381-1/5
Features
•Composite type with a P-Channel Sillicon MOSFET
(MCH3317) and a Schottky Barrier Diode (SBS007M)
contained in one package facilitating high-density
mounting.
•[MOS]
1) Low ON-resistance.
2) Ultrahigh-speed switching.
3) 1.8V drive.
•[SBD]
1) Short reverse recovery time.
2) Low forward voltage.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7381
CPH5815
Package Dimensions
unit : mm
2171
[CPH5815]
N2603 TS IM TA-3785
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
DC / DC Converter Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS --12 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID--1.5 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --6.0 A
Allowable Power Dissipation PD
Mounted on a ceramic board (600mm2✕0.8mm) 1unit
0.8 W
Channel Temperature Tch --150 °C
Storage Temperature Tstg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage VRRM 15 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 15 V
Average Output Current IO0.5 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 3 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Marking : QR
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1.6 0.60.6 2.8
0.2
2.9
0.05
0.40.95
0.2
0.9
0.7
0.15
0.4
12
345
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
CPH5815
No.7381-2/5
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
[MOSFET]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --12 V
Zero-Gate Voltage Drain Current IDSS VDS=--12V, VGS=0 --10 µA
Gate-to-Source Leakage Current IGSS VGS=±8.0V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--6V, ID=--1mA --0.3 --1.0 V
Forward T ransfer Admittance yfsVDS=--6V, ID=--0.8A 1.3 1.8 S
RDS(on)1 ID=--0.8A, VGS=--4.5V 220 290 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--0.4A, VGS=--2.5V 320 450 mΩ
RDS(on)3 ID=--0.1A, VGS=--1.8V 430 650 mΩ
Input Capacitance Ciss VDS=--6V, f=1MHz 160 pF
Output Capacitance Coss VDS=--6V, f=1MHz 45 pF
Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz 35 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns
Rise T ime trSee specified Test Circuit. 45 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 29 ns
Fall Time tfSee specified Test Circuit. 30 ns
Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--1.5A 2.6 nC
Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--1.5A 0.25 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--1.5A 0.65 nC
Diode Forward Voltage VSD IS=--1.5A, VGS=0 --0.92 --1.5 V
[SBD]
Reverse Voltage VRIR=0.5mA 15 V
Forward Voltage VF1I
F
=0.3A 0.35 0.41 V
VF2I
F
=0.5A 0.4 0.46 V
Reverse Current IRVR=6V 200 µA
Interterminal Capacitance C VR=10V, f=1MHz cycle 20 pF
Reverse Recovery Time trr IF=IR=100mA, see specified Test Circuit. 10 ns
Electrical Connection
Switching Time Test Circuit trr Test Circuit
[MOSFET] [SBD]
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --0.8A
RL=7.5Ω
VDD= --6V
VOUT
CPH5815(MOSFET)
VIN
0V
--4.5V
VIN
Duty≤10%
50Ω100Ω10Ω
--5V
trr
100mA100mA
10mA
10µs
543
12
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
(Top view)
CPH5815
No.7381-3/5
--60 --40 --20 0 20 40 60 80 100 120 140 160
IT04355
0 --0.1
--0.3
--0.6
--0.9
--1.2
--1.5
0
--0.5
--1.0
--1.5
--2.0
0
200
100
400
600
300
500
700
800
0
--0.2 --0.3 --0.4 --0.5
IT04353
0 --0.5 --1.0 --1.5 --2.0 --3.0--2.5
IT04354
IT04356
0 --1 --2 --3 --4 --5 --6 --7 --8
200
400
600
800
100
300
500
700
0
Ta=25°C
VGS= --1.0V
--1.5V
--2.5V
--1.8V
--4.5V
--3.0V
--3.5V
--0.8A
ID= --0.4A
ID= --0.1A, VGS= --1.8V
ID= --0.4A, VGS= --2.5V
ID= --0.8A, VGS= --4.5V
VDS= --6V
25°C
--25°C
Ta=75°C
25°C
75°C
Ta= --25°C
[MOSFET] [MOSFET]
[MOSFET] [MOSFET]
0 --2 --4 --6 --8 --10 --12
100
10
7
5
3
2
5
3
2
--0.1 23 5 237
--1.0 IT04359
IT04357
--0.01 23 57
--0.1 23 2357
--1.0
0.1
1.0
7
5
3
2
5
3
2
100
10
7
5
3
2
7
5
3
2
3
2
IT04358
--0.4 --0.6 --0.8 --1.0 --1.2 --1.4
--0.1
--1.0
7
5
3
2
5
3
2
IT04360
75°C
25°C
Ta= --25°C
VDS= --6V VGS=0
--25°C
25°C
Ta=75°C
f=1MHz
Ciss
Coss
Crss
VDD= --6V
VGS= --4.5V
td(on)
td(off)
tr
tf
[MOSFET] [MOSFET]
[MOSFET] [MOSFET]
RDS(on) -- VGS
ID -- VDS ID -- VGS
RDS(on) -- Ta
SW Time -- IDCiss, Coss, Crss -- VDS
yfs -- IDIF -- VSD
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward Transfer Admittance, yfs -- S
Diode Forward Voltage, VSD -- V
Forward Current, IF -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
CPH5815
No.7381-4/5
--10--1.0--0.1 23 57 2 2357
0 0.5 1.0 1.5 2.0 2.5 3.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
IT04361
0
020 40
0.2
0.4
0.6
0.8
1.0
60 80 100 120 140 160
IT05252
Mounted on a ceramic board(600mm2✕0.8mm)1unit
2
3
5
7
2
3
5
7
2
3
5
7
--10
--1.0
--0.1
--0.01
IT05251
VDS= --6V
ID= --1.5A
IDP= --6.0A
ID= --1.5A
Operation in this
area is limited by RDS(on).
100ms
DC operation
1ms
10ms
<10µs
Ta=25°C
Single pulse
Mounted on a ceramic board(600mm
2
✕0.8mm)1unit
[MOSFET] [MOSFET]
[MOSFET]
(1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°
(3) Rectangular wave θ=180°
(4) Sine wave θ=180°
180°
360°
θ
360°
(2) (4) (3)
Rectangular wave
Sine wave
(1)
1.0
10
2
3
5
7
100
2
3
5
7
1.0 10
23 57 23
Rev erse Voltage, VR -- V
C -- VR
Interterminal Capacitance, C -- pF
f=1MHz
0
0.001
100
10
5
7
3
2
1.0
5
7
3
2
0.1
5
7
3
2
0.01
5
7
3
2
5
7
3
2
15510
Rev erse Voltage, VR -- V
IR -- VR
Reverse Current, IR -- mA
0
00.1 0.2 0.3 0.4
0.4
0.35
0.3
0.2
0.15
0.1
0.05
0.25
0.5 0.6 0.7
Average Forward Current, IO -- A
PF(AV) -- IO
Average Forward Power Dissipation, PF(AV) -- W
0 0.3 0.4 0.50.1 0.2
0.01
1.0
2
0.1
7
5
3
2
7
5
3
2
Forward Voltage, VF -- V
Forward Current, IF -- A
IF -- VF
Ta=125°C
25°C
50°C
Ta=125°C
25°C
50°C
75°C
100°C
IT02912 IT02913
IT02914 IT02915
[SBD] [SBD]
[SBD] [SBD]
100°C
75°C
VGS -- Qg
PD -- Ta
A S O
Gate-to-Source Voltage, VGS -- VAllowable Power Dissipation, PD -- W
Drain Current, ID -- A
Total Gate Charge, Qg -- nC
Ambient Temperature, Ta -- °C
Drain-to-Source Voltage, VDS -- V
CPH5815
No.7381-5/5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2003. Specifications and information herein are subject
to change without notice.
PS
70.01 23 7
0.1
052 237
1.0
5
12
10
8
6
4
2
3
Time, t -- s
IFSM -- t
Surge Forward Current, IFSM(Peak) -- A
IT00636
[SBD]
IS
20ms
t
Current waveform 50Hz sine wave
