NTF3055L108, NVF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level, N-Channel SOT-223 http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V RDS(on) = 120 mW Features * AEC Q101 Qualified - NVF3055L108 * These Devices are Pb-Free and are RoHS Compliant N-Channel D Applications * * * * Power Supplies Converters Power Motor Controls Bridge Circuits G S MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Drain-to-Source Voltage VDSS 60 Vdc Drain-to-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Gate-to-Source Voltage - Continuous - Non-repetitive (tp 10 ms) Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tp 10 ms) Total Power Dissipation @ TA = 25C (Note 1) Total Power Dissipation @ TA = 25C (Note 2) Derate above 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc) Thermal Resistance -Junction-to-Ambient (Note 1) -Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds VGS 15 20 Vdc Vpk ID ID 3.0 1.4 9.0 Apk PD 2.1 1.3 0.014 Watts Watts W/C TJ, Tstg -55 to 175 C EAS 74 mJ RqJA RqJA 72.3 114 TL 260 October, 2011 - Rev. 6 1 2 SOT-223 CASE 318E STYLE 3 3 MARKING DIAGRAM Adc IDM AYW 3055L = Device Code 3055LG A = Assembly Location G Y = Year W = Work Week G = Pb-Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 4 Drain C/W C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 1 pad size, 1 oz. (Cu. Area 0.0995 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, 2-2.4 oz. (Cu. Area 0.272 in2). (c) Semiconductor Components Industries, LLC, 2011 4 1 1 Gate 2 3 Drain Source ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTF3055L108/D NTF3055L108, NVF3055L108 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 60 - 68 68 - - - - - - 1.0 10 - - 100 1.0 - 1.68 4.6 2.0 - - 92 120 - 0.290 0.250 0.43 - gfs - 5.7 - Mhos Ciss - 313 440 pF Coss - 112 160 Crss - 40 60 td(on) - 11 25 tr - 35 70 td(off) - 22 45 tf - 27 60 QT - 7.6 15 Q1 - 1.4 - Q2 - 4.0 - - - 0.87 0.72 1.0 - trr - 35 - ta - 21 - tb - 14 - QRR - 0.044 - OFF CHARACTERISTICS V(BR)DSS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) IDSS Gate-Body Leakage Current IGSS (VGS = 15 Vdc, VDS = 0 Vdc) Vdc mV/C mAdc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain-to-Source On-Resistance (Note 3) (VGS = 5.0 Vdc, ID = 1.5 Adc) RDS(on) Static Drain-to-Source On-Resistance (Note 3) (VGS = 5.0 Vdc, ID = 3.0 Adc) (VGS = 5.0 Vdc, ID = 1.5 Adc, TJ = 150C) VDS(on) Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 3.0 Adc) Vdc mV/C mW Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 V, f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time (VDD = 30 Vdc, ID = 3.0 Adc, VGS = 5.0 Vdc, RG = 9.1 W) (Note 3) Fall Time Gate Charge (VDS = 48 Vdc, ID = 3.0 Adc, VGS = 5.0 Vdc) (Note 3) ns nC SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 3.0 Adc, VGS = 0 Vdc) (IS = 3.0 Adc, VGS = 0 Vdc, TJ = 150C) (Note 3) Reverse Recovery Time (IS = 3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 VSD Vdc ns mC NTF3055L108, NVF3055L108 TYPICAL ELECTRICAL CHARACTERISTICS 5 VDS > = 10 V VGS = 3.5 V VGS = 4.5 V 4 3 VGS = 6 V 2 VGS = 10 V VGS = 3.2 V VGS = 3 V VGS = 2.8 V 1 0 6 VGS = 3.4 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 6 VGS = 2.5 V 0.5 0 1.5 1 2 2.5 5 4 3 TJ = 100C 2 TJ = 25C 1 TJ = -55C 0 3 1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ = 100C 0.14 0.12 TJ = 25C 0.1 0.08 TJ = -55C 0.06 0.04 0.02 0 2 1 3 4 5 6 ID, DRAIN CURRENT (AMPS) 0.16 3.5 4 4.5 5 0.14 TJ = 100C 0.12 0.1 TJ = 25C 0.08 0.06 TJ = -55C 0.04 0.02 0 1 2 3 4 5 6 ID, DRAIN CURRENT (AMPS) Figure 4. On-Resistance vs. Drain Current and Gate Voltage 10000 VGS = 0 V ID = 1.5 A VGS = 5 V IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 3 VGS = 10 V Figure 3. On-Resistance vs. Gate-to-Source Voltage 2 2.5 Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) VGS = 5 V 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics 0.16 1.5 1.6 1.4 1.2 1 TJ = 150C 1000 100 TJ = 100C 10 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 1 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 60 NTF3055L108, NVF3055L108 1000 C, CAPACITANCE (pF) VGS = 0 V VDS = 0 V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS TJ = 25C Ciss 800 600 Crss 400 Ciss Coss 200 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 6 QT 5 VGS 4 Q1 2 1 ID = 3 A TJ = 25C 0 0 1 IS, SOURCE CURRENT (AMPS) tf td(off) td(on) 1 10 100 8 VGS = 0 V TJ = 25C 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0.54 0.58 0.62 0.66 0.7 0.74 0.78 0.82 0.86 0.9 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 ms ID, DRAIN CURRENT (AMPS) 7 6 RG, GATE RESISTANCE (W) 10 10 ms 1 1 ms 0.1 0.001 0.1 5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) VGS = 20 V SINGLE PULSE TC = 25C dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) tr 0.01 4 3.2 100 1 3 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VDS = 30 V ID = 3 A VGS = 5 V 10 2 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 Q2 3 1000 100 80 ID = 7 A 70 60 50 40 30 20 10 0 25 50 75 100 125 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 NTF3055L108, NVF3055L108 r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE RESISTANCE TYPICAL ELECTRICAL CHARACTERISTICS 100 10 D = 0.5 0.2 0.1 0.05 0.02 1 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 t, TIME (s) Figure 13. Thermal Response ORDERING INFORMATION Package Shipping NTF3055L108T1G SOT-223 (TO-261) (Pb-Free) 1000 / Tape & Reel NVF3055L108T1G SOT-223 (TO-261) (Pb-Free) Device 1000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTF3055L108, NVF3055L108 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE 1 2 3 b e1 e A1 C q A 0.08 (0003) DIM A A1 b b1 c D E e e1 L L1 HE E MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0 q L STYLE 3: PIN 1. 2. 3. 4. L1 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 --- --- 1.75 2.00 7.00 7.30 10 - MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 --- 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 --- 0.078 0.287 10 GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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