NVF3055L108T1G - ON Semiconductor

Publication Order Number:

NTF3055L108/D

October, 2011 − Rev. 6

NTF3055L108,

NVF3055L108

Power MOSFET

3.0 A, 60 V, Logic Level, N−Channel

SOT−223

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Features

•AEC Q101 Qualified − NVF3055L108

•These Devices are Pb−Free and are RoHS Compliant

Applications

•Power Supplies

•Converters

•Power Motor Controls

•Bridge Circuits

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain−to−Source Voltage VDSS 60 Vdc

Drain−to−Gate Voltage (RGS = 1.0 MW)VDGR 60 Vdc

Gate−to−Source Voltage

− Continuous

− Non−repetitive (tp ≤ 10 ms)

VGS ±15

±20

Vdc

Vpk

Drain Current

− Continuous @ TA = 25°C

− Continuous @ TA = 100°C

− Single Pulse (tp ≤ 10 ms)

IDM

3.0

1.4

9.0

Adc

Apk

Total Power Dissipation @ TA = 25°C (Note 1)

Total Power Dissipation @ TA = 25°C (Note 2)

Derate above 25°C

PD2.1

1.3

0.014

Watts

W/°C

Operating and Storage Temperature Range TJ, Tstg −55

to 175

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 5.0 Vdc,

IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)

EAS 74 mJ

Thermal Resistance

−Junction−to−Ambient (Note 1)

−Junction−to−Ambient (Note 2)

RqJA

72.3

114

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

TL260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.

(Cu. Area 0.0995 in2).

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2−2.4 oz. (Cu. Area 0.272 in2).

3.0 A, 60 V

RDS(on) = 120 mW

N−Channel

SOT−223

CASE 318E

STYLE 3

MARKING DIAGRAM

AYW

3055LG

3055L = Device Code

A = Assembly Location

Y = Year

W = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

PIN ASSIGNMENT

321

Gate Drain Source

Drain

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

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NTF3055L108, NVF3055L108

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

1.0

mAdc

Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.68

4.6

2.0

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 5.0 Vdc, ID = 1.5 Adc)

RDS(on)

−92 120

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 5.0 Vdc, ID = 3.0 Adc)

(VGS = 5.0 Vdc, ID = 1.5 Adc, TJ = 150°C)

VDS(on)

−0.290

0.250

0.43

−

Vdc

Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 3.0 Adc) gfs −5.7 −Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 V,

f = 1.0 MHz)

Ciss −313 440 pF

Output Capacitance Coss −112 160

Transfer Capacitance Crss −40 60

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

(VDD = 30 Vdc, ID = 3.0 Adc,

VGS = 5.0 Vdc,

RG = 9.1 W) (Note 3)

td(on) −11 25 ns

Rise Time tr−35 70

Turn−Off Delay Time td(off) −22 45

Fall Time tf−27 60

Gate Charge

(VDS = 48 Vdc, ID = 3.0 Adc,

VGS = 5.0 Vdc) (Note 3)

QT−7.6 15 nC

Q1−1.4 −

Q2−4.0 −

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc,

TJ = 150°C) (Note 3)

VSD

−

0.87

0.72

1.0

−

Vdc

Reverse Recovery Time

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms) (Note 3)

trr −35 −ns

ta−21 −

tb−14 −

Reverse Recovery Stored Charge QRR −0.044 −mC

3. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤2.0%.

4. Switching characteristics are independent of operating junction temperatures.

NTF3055L108, NVF3055L108

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TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

TJ = 25°C

TJ = 100°C

TJ = −55°C

0.16

0.14

0.12

0.1

0.08

0.02 146

ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

VGS = 10 V

1.8

1.6

1.4

TJ, JUNCTION TEMPERATURE (°C)

RDS(on), DRAIN−TO−SOURCE RESISTANCE

(NORMALIZED)

−50 50250−25 75 125100

ID = 1.5 A

VGS = 5 V

0.8

0.6 150

1000

10000

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

IDSS, LEAKAGE (nA)

04060302010 50

100

321

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

00.5

VGS = 5 V

VGS = 2.5 V

VGS = 6 V

VGS = 10 V

VGS = 3 V

1.5 2.5 15241.5 2.5 3 3.5 4.5

0.06

0.04

1.2

0.16

0.14

0.12

0.1

0.08

0.02 14653

0.06

0.04

175

VGS = 2.8 V

VGS = 3.2 V

VGS = 3.4 V

VGS = 3.5 V

VGS = 4.5 V

TJ = 150°C

TJ = 100°C

TJ = 25°C

TJ = 100°C

TJ = −55°C

TJ = 25°C

TJ = 100°C

TJ = −55°C

VDS > = 10 V

VGS = 0 V

NTF3055L108, NVF3055L108

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TYPICAL ELECTRICAL CHARACTERISTICS

10 10 155020525

RDS(on) LIMIT

VGS

0.1

0.001

1000

3.2

2.8

2.4

1000

800

600

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE

(VOLTS)

C, CAPACITANCE (pF)

400

200

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

RG, GATE RESISTANCE (W)

Figure 10. Diode Forward Voltage vs. Current

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

IS, SOURCE CURRENT (AMPS)

t, TIME (ns)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

TJ, STARTING JUNCTION TEMPERATURE (°C)

ID, DRAIN CURRENT (AMPS)

EAS, SINGLE PULSE DRAIN−TO−SOURCE

AVALANCHE ENERGY (mJ)

057

428

1 10 100 0.54 0.7 0.820.660.62 0.860.58

0.1 10 10001 25 125 15010075 17550

ID = 3 A

TJ = 25°C

VGS

VGS = 0 V

VDS = 0 V TJ = 25°C

Crss

Ciss

Coss

Crss

1.6

1.2

0.74 0.78

Ciss

VGS = 20 V

SINGLE PULSE

TC = 25°C

VDS = 30 V

ID = 3 A

VGS = 5 V

VGS = 0 V

TJ = 25°C

ID = 7 A

1 ms

100 ms

10 ms

td(off)

td(on)

VDS

0.9

0.01

031

100

0.8

0.4

THERMAL LIMIT

PACKAGE LIMIT

100

NTF3055L108, NVF3055L108

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TYPICAL ELECTRICAL CHARACTERISTICS

100

0.01

1001010.10.001 1000

r(t), EFFECTIVE TRANSIENT THERMAL

RESPONSE RESISTANCE

t, TIME (s)

Figure 13. Thermal Response

0.1

0.010.00010.000001

D = 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

0.00001

ORDERING INFORMATION

Device Package Shipping†

NTF3055L108T1G SOT−223 (TO−261)

(Pb−Free) 1000 / Tape & Reel

NVF3055L108T1G SOT−223 (TO−261)

(Pb−Free)

1000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NTF3055L108, NVF3055L108

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PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE N

123

0.08 (0003)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCH.

1.5

0.059 ǒmm

inchesǓ

SCALE 6:1

3.8

0.15

2.0

0.079

6.3

0.248

2.3

0.091

2.3

0.091

2.0

0.079

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX MIN

MILLIMETERS

1.50 1.63 1.75 0.060

INCHES

A1 0.02 0.06 0.10 0.001

b0.60 0.75 0.89 0.024

b1 2.90 3.06 3.20 0.115

c0.24 0.29 0.35 0.009

D6.30 6.50 6.70 0.249

E3.30 3.50 3.70 0.130

e2.20 2.30 2.40 0.087

0.85 0.94 1.05 0.033

0.064 0.068

0.002 0.004

0.030 0.035

0.121 0.126

0.012 0.014

0.256 0.263

0.138 0.145

0.091 0.094

0.037 0.041

NOM MAX

L1 1.50 1.75 2.00 0.060

6.70 7.00 7.30 0.264

0.069 0.078

0.276 0.287

− −

0°10°0°10°

L0.20 −−− −−− 0.008 −−− −−−

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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NTF3055L108/D

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Phone: 81−3−5817−1050

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