H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
September 2009
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM
Phototransistor Optocouplers
Features
■
H11AV1M and H11AV2M feature 0.3" input-output
lead spacing
■
H11AV1AM and H11AV2AM feature 0.4" input-output
lead spacing
■
UL recognized (File #E90700, Vol. 2)
■
VDE recognized (File #102497)
■
Add option V (e.g., H11AV1AVM)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
Description
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 6-pin dual in-line white package.
Schematic Package Outlines
H11AV1SM, H11AV2SM
H11AV1M, H11AV2M
H11AV1AM, H11AV2AM
EMITTER
N/C
1
2
3
ANODE
CATHODE
4
5
6BASE
COLLECTOR
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 2
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Units
TOTAL DEVICE
T
STG
Storage Temperature -40 to +150 °C
T
OPR
Operating Temperature -40 to +100 °C
T
SOL
Wave Solder Temperature (see page 8 for reflow solder profiles) 260 for 10 sec °C
P
D
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
250 mW
2.94 mW/°C
EMITTER
I
F
DC / Average Forward Input Current 60 mA
V
R
Reverse Input Voltage 6 V
P
D
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
120 mW
1.41 mW/°C
DETECTOR
V
CEO
Collector-Emitter Voltage 70 V
V
CBO
Collector-Base Voltage 70 V
V
ECO
Emitter-Collector Voltage 7 V
P
D
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
150 mW
1.76 mW/°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 3
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
*Typical values at T
A
= 25°C
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage (I
F
= 10mA) T
A
= 25°C 0.8 1.18 1.5 V
T
A
= -55°C 0.9 1.28 1.7
T
A
= 100°C 0.7 1.05 1.4
I
R
Reverse Leakage Current V
R
= 6.0V 10 µA
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 1.0mA, I
F
= 0 70 100 V
BV
CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
F
= 0 70 120 V
BV
ECO
Emitter-Collector Breakdown Voltage I
E
= 100µA, I
F
= 0 7 10 V
I
CEO
Collector-Emitter Dark Current V
CE
= 10V, I
F
= 0 1 50 nA
I
CBO
Collector-Base Dark Current V
CB
= 10V 0.5 nA
C
CE
Capacitance V
CE
= 0V, f = 1MHz 8 pF
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
DC CHARACTERISTIC
CTR Current Transfer Ratio,
Collector to Emitter
I
F
= 10mA, V
CE
= 10V H11AV1M
H11AV1AM
100 300 %
H11AV2M
H11AV2AM
50
V
CE (SAT)
Collector-Emitter
Saturation Voltage
I
C
= 2mA, I
F
= 20mA All 0.4 V
AC CHARACTERISTIC
T
ON
Non-Saturated Turn-on
Time
I
C
= 2mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
All 15 µs
T
ON
Non Saturated Turn-off
Time
I
C
= 2mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
All 15 µs
Symbol Parameters Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 V
AC(pk)
C
ISO
Isolation Capacitance V
I-O
= 0V, f = 1MHz 0.2 2 pF
R
ISO
Isolation Resistance V
I-O
= 500 VDC 10
11
Ω
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 4
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol Parameter Min. Typ. Max. Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms I-IV
For Rated Main voltage < 300Vrms I-IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175
V
PR
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594 V
peak
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275 V
peak
V
IORM
Max. Working Insulation Voltage 850 V
peak
V
IOTM
Highest Allowable Over Voltage 6000 V
peak
External Creepage 7 mm
External Clearance 7 mm
Insulation Thickness 0.5 mm
RIO Insulation Resistance at Ts, V
IO
= 500V 10
9
Ω
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 5
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Typical Performance Curves
Fig. 2 Normalized CTR vs. Forward Current
IF – FORWARD CURRENT (mA)
02468101214161820
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE = 5.0V
TA = 25°CNormalized to
IF = 10mA
Fig. 3 Normalized CTR vs. Ambient Temperature
TA – AMBIENT TEMPERATURE (°C)
-60 -40 -20 0 20 40 60 80 100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 5mA
IF = 10mA
IF = 20mA
Normalized to
IF = 10mA
TA = 25°C
IF – LED FORWARD CURRENT (mA)
VF – FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
110100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = 25°C
TA = -55°C
TA = 100°C
Fig. 5 CTR vs. RBE (Saturated)
RBE- BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF = 20mA
IF = 10mA
IF = 5mA
VCE = 0.3 V
Fig. 4 CTR vs. RBE (Unsaturated)
RBE – BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 5.0V
IF = 20mA
IF = 10mA
IF = 5mA
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
IF = 5mA
IF = 20mA
IF = 10mA
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
IC - COLLECTOR CURRENT (mA)
VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)
IF = 2.5mA
TA = 25
˚C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 6
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Typical Performance Curves
(Continued)
NORMALIZED ton - (ton(R
BE
) / ton(open))
Fig. 8 Normalized ton vs. RBE
RBE – BASE RESISTANCE (k Ω)
10 100 1000 10000 100000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC = 10V
IC = 2mA
RL = 100Ω
SWITCHING SPEED - (µs)
Fig. 7 Switching Speed vs. Load Resistor
R – LOAD RESISTOR (kΩ)
0.1 1 10 100
0.1
1
10
100
1000
Toff
IF = 10 mA
VCC = 10 V
TA = 25°C
Tr
Ton
Tf
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VCC = 10V
IC = 2mA
RL = 100Ω
NORMALIZED toff - (toff(R
BE
) / toff(open))
10 100 1000 10000 100000
RBE – BASE RESISTANCE (k Ω)
Fig. 9 Normalized toff vs. RBE
Fig. 10 Dark Current vs. Ambient Temperature
TA – AMBIENT TEMPERATURE
(°C)
020406080100
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
0.001
0.01
0.1
1
10
100
1000
10000
VCE = 10 V
TA = 25°
C
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT WAVE FORMS
trtf
INPUT
IF RL
RBE
VCC = 10V
OUTPUT
ton
10%
90%
toff
Figure 11. Switching Time Test Circuit and Waveforms
IC
Adjust IF to produce IC = 2 mA
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 7
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Package Dimensions
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
7.62 (Typ.)
15° (Typ.)
0.20–0.30
0.20–0.30
10.16–10.80
Through Hole 0.4" Lead Spacing
Surface Mount
Rcommended Pad Layout
(1.78)
(2.54)
(1.52)
(7.49)
(10.54)
(0.76)
8.13–8.89
Note:
All dimensions in mm.
6.10–6.60
8.43–9.90
Pin 1
64
13
0.25–0.36
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
0.38 (Min.)
3.28–3.53
5.08
(Max.) 0.20–0.30
0.16–0.88
(8.13)
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 8
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Ordering Information
Marking Information
Option
Order Entry Identifier
(Example) Description
No option H11AV1M Standard Through Hole Device
S H11AV1SM Surface Mount Lead Bend
SR2 H11AV1SR2M Surface Mount; Tape and Reel
T H11AV1TM 0.4" Lead Spacing
V H11AV1VM VDE 0884
TV H11AV1TVM VDE 0884, 0.4" Lead Spacing
SV H11AV1SVM VDE 0884, Surface Mount
SR2V H11AV1SR2VM VDE 0884, Surface Mount, Tape and Reel
H11AV1
1
2
6
43 5
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are
marked with date code ‘325’ or earlier are marked in portrait format.
Definitions
1Fairchild logo
2Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘3’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
V X YY
Q
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 9
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Tape Dimensions
Note:
All dimensions are in millimeters.
Reflow Soldering Profile
4.0 ± 0.1
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
24.0 ± 0.3
12.0 ± 0.1
0.30 ± 0.05
21.0 ± 0.1
4.5 ± 0.20
0.1 MAX 10.1 ± 0.20
9.1 ± 0.20
Ø1.5 ± 0.1/-0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
360
1.822°C/Sec Ramp up rate
33 Sec
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 10
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intended to be an exhaustive list of all such trademarks.
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®
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OPTOLOGIC®
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®
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™
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As used herein:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Preliminary Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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at any time without notice to improve the design.
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The datasheet is for reference information only.
Rev. I40
First Production
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
