ABB Semiconductors AG
Key Parameters
VRRM =2300 V
IFAVM =1140 A
IFSM =13.5 kA
VF0 =0.83 V
rF=0.30 mΩΩ
Doc. No. 5SYA 1120 - 01 Apr-98
Avalanche Rectifier Diode
5SDA 10D2303
Features
• • Optimized for line frequency rectifiers
• • Low on-state voltage, narrow VF-bands for parallel operation
• • Self protected against transient overvoltages
• • Guaranteed maximum avalanche power dissipation
• • Industry standard housing
Blocking
Part number 5SDA 10D2303 5SDA 10D2003 5SDA 10D1703 Condition
VRRM 2300 2000 1700 f=50 Hz tP=10 ms
VRSM 2530 2200 1870 tP=10 ms Tj=160°C
IRRM ≤50 mA VRRM Tj=160°C
PRSM ≤70 kW tP=20 µs Tj=45°C
≤50 kW tP=20 µs Tj=160°C
Mechanical data
FMMounting force min. 10 kN
max. 12 kN
aAcceleration
Device unclamped
Device clamped 50
200 m/s2
m/s2
mWeight 0.25 kg
DSSurface creepage distance 30 mm
DaAir strike distance 20.5 mm
ABB Semiconductors AG 5SDA 10D2303
Doc. No. 5SYA 1120 - 01 Apr-98
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
On-state
IFAVM Max. average on-state current 1140 AHalf sine wave, TC = 85°C
IFRMS Max. RMS on-state current 1790 A
IFSM Max. peak non-repetitive 13.5 kA tp =10 ms Tj = 160°C
surge current 14.5 kA tp =8.3 ms After surge:
I2tLimiting load integral 910⋅103A2stp =10 ms VR ≈ 0V
875⋅103A2stp =8.3 ms
VF0 Threshold voltage 0.83 VIF=1000 - 3000 ATj = 160°C
rFSlope resistance 0.30 mΩ
VF min On-state voltage 1.20 VIF=1800 ATj = 25°C
VF max On-state voltage 1.35 V
Thermal
TjStorage and operating -40...160°C
junction temperature range
RthJC Thermal resistance 80 K/kW Anode side cooled
junction to case 80 K/kW Cathode side cooled
40 K/kW Double side cooled
RthCH Thermal resistance case to 16 K/kW Single side cooled
heat sink 8K/kW Double side cooled
For a given case temperature Tc at ambient temperature Ta the
maximum on-state current can be calculated as follows:
I = -V + (V )4*f*r*P
2*fr
FAVM F0 F0 2f
2f
2
+
*
where P= T- T
R
J max C
thjc or P= T- T
R
J max A
thja
Analytical function for transient thermal impedance:
Z(t) = R(1-e)thJC i-t/
i1
4iτ
=
∑
i1 2 3 4
R (K/kW) 20.95 10.57 7.15 1.33
τi (s) 0.396 0.072 0.009 0.0044 t [s]
10-3 10-2 10-1 100101
2 3 4 5 6 7 2 3 4 5 6 7 2 3 4 5 5 6 2 3 4 5 6 7
0
5
10
15
20
25
30
35
40
45
Fm =10...12 kN
Double Side Cooling
Zth
[K/kW]
IFAVM (A) P (W) VF0 (V) rF (Ω)
T max (°C) Tc (°C) Ta (°C)
Rthja (K/kW) RthJC (K/kW)
f
2
= 1for DC current
2.5 for half-sine wave
3.1 for 120°el., sine
6for 60° el., sine
