1.0(25.4)MIN 1.0(25.4)MIN
inch(mm)
.034(0.9)
.028(0.7)
.141(3.6)
.118(3.0)
.256(6.5)
.232(5.9)
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BLGALAXY ELECTRICAL
BL
Document Number 0290001
General Description
IT(RMS) VDRM IDRM VTM ITSM RSdv/dt di/dt
(7) (8) (5) (9)
MAX MI N MIN MAX MAX MAX Ma x 60Hz 50Hz MIN MIN TYP
K1050G 1 ±90 95 113 5 150 1.5 20 16.7 0.1 1500 150
K1100G 1 ±90 104 118 5 150 1.5 20 16.7 0.1 1500 150
K1200G 1 ±90 110 125 5 150 1.5 20 16.7 0.1 1500 150
K1300G 1 ±90 120 138 5 150 1.5 20 16.7 0.1 1500 150
K1400G 1 ±90 130 146 5 150 1.5 20 16.7 0.1 1500 150
K1500G 1 ±90 140 170 5 150 1.5 20 16.7 0.1 1500 150
K2000G 1 ±180 190 215 5 150 1.5 20 16.7 0.1 1500 150
K2200G 1 ±180 205 230 5 150 1.5 20 16.7 0.1 1500 150
K2400G 1 ±190 220 250 5 150 1.5 20 16.7 0.1 1500 150
K2500G 1 ±200 240 280 5 150 1.5 20 16.7 0.1 1500 150
K2501G 1(10) ±200 240 280 5 150 6 20 16.7 0.1 1500 15060
Type
60
SIDAC VBO: 95 - 280 V olts
60
available for custom design applications. Please
75
60
GALAXY ELECTRICAL
holding current of the device.
◇ Switching voltages in the range of 95 V to 330 V.
◇ Sidacs feature glass-passivated junctions that ensure
DO - 15
KG --- S ER IES
60
IBO
mA
TYP
60
µA
10
MAX
10
10
A V V µA kΩV/µSec A/µSec
◇ A sidac is a silicon bilateral voltage triggered switch,
with greater power-handling capabilities than
standard diacs. Upon application of a voltage
exceeding the Sidac breakover voltage point, the Sidac
switches on, through a negative resistance region, to a
a low on-state voltage. Conduction will continue until
the current is interrupted or drops below the minimum
consult the factory for more information.
IH
(3) (4)
long term reliability and stable characteristics by
creating a rugged, reliable barrier against junction
contamination.
◇ Variations of devices covered in this data sheet are
VBO
(1)
10
10
60
60
60
60
60
10
10
10
10
VA
10
1.
+I
-V +V
IT
IH
IS
IBO
IDRM
VT
VDRM
VS
VBO
RS(VBO-VS)
(IS-IBO)
RSSUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: IT RMS Maximum Rated
Value at Specified Junction Temperature
BLOCKING CAPABILITY MAY BE LOST
DURING AND IMMEDIATELY
FOLLOWING SURGE CURRENT
INTERVAL
OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE
HAS RETURNED TO STEADY-STATE
RATED VALUE.
1.0 10 1000
100
1.0
2.0
40
100
4.0
10
8.0
6.0
20
Surge Current Duration - Full Cycles
Peak Surge (NonRepetitive)
On-State Current [ITSM] - Amps
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BLGALAXY ELECTRICAL
Document Number 0290001
2.
(9) For best Sidac operation, the load impedance should be near or
less than sw itching resistance.
RS — Sw itching resistance RS= 50/60 Hz sine w ave
(VBO-VS)
◇ All measurements are made at 60Hz w ith a resistive load at an
of this catalog.
◇ Junction temperature range (TJ) is -40°C to +125°C.
◇ Lead solder temperature is a maximum of +230°C f or 10 seconds
ambient temperature of +25°C unless otherw ise specified.
VDRM — Repetitive peak off-state voltage
(I
S-I
BO
)
VBO
— Breakover voltage 50/60 Hz sine w ave
max imum; ≥ 1/16" (1.59mm) from case.
◇ Storage temperature range (TS) is -65°C to +150°C.
◇ The case (TC) or lead (TL) temperature is measured as show n on
the dimensional outline draw ings. See “Package Dimensions” section
VTM
— Peak on-state voltage, IT = 1 Amp
General Notes
IDRM — Repetitive peak off-state current 50/60 Hz sine w ave; V = VDRM (5) See Figure 9.1 for more than one full cycle rating.
IH — Dynamic holding current 50/60 Hz sine w ave; R = 100Ω (6) RθJA Type 41 is 70° C/W.
IT(RMS)
— On-state RMS current TJ ≤ 125°C 50/60 Hz sine w ave (7) TL ≤ 100°C
ITSM
— Peak one cycle surge current 50/60 Hz sine w ave (nonrepetitive) (8) See Figure 9.14 for clarification of Sidac operation.
Spe cific Test Conditions Electrical Spe cification Notes
di/dt — Critical rate-of-rise of on-state current (1) See Figure 9.5 for VBO
change vs junction temperature.
100°C (3) See Figure 9.2 for IH vs case temperature.
IBO — Breakover current 50/60 Hz sine w ave (4) See Figure 9.13 for test circuit.
(2) See Figure 9.6 for IBO vs junction temperature. dv/dt — Critical rate-of-rise of off -state voltage at rated VDRM
; TJ ≤
RATINGS AND CHARACTERISTIC CURVES KG --- S ER IES
V- I CHARACTERIS TICS FIG.1 -- PEAK SURGE CURRENT vs SUR G E CU RRENT
FFFFFFFF DURATION
140
120
80
100
20
40
60
26
0 0.2 0.4 0.6 0.8 1.0
DO-15x
CURRENT WAVEFORM: Sinusoidal - 60 Hz
LOAD: Resistive or Inductive
FREE AIR RATING
RMS On-State Current [IT(RMS)] - Amps
Maximum Allowable Ambient Temperature (TA) - ° C
0
.5
1.5
1.0
2.0
-40 -15 +25 +65 +105 +125
Case Temperature (TC) - ° C
IH(TC=25° C)
IH
Ratio of
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BLGALAXY ELECTRICAL
Document Number 0290001
3.
RATINGS AND CHARACTERISTIC CURVES KG --- SERIES
FIG.2 -- NORMALIZED DC HOLDING CURRENT vs
FFFFFF FFFF F CASE/LEAD TEMPERATURE FIG.3- - REPETITIVE PEAK ON-STAT E CURRENT ( ITRM)
GGGGvs PULSE WIDTH at VARIOUS FREQUENCIES
FIG.4 -- MAXIMUM ALLOW ABLE AMBI ENT
FFFFFFFFFF FFT EM PERATURE vs ON- ST ATE CURRENT FIG.5 -- NORMALIZED VBO CHANGE v s JUNC TIO N
JJJJJJJJJJJ TEMPERATURE
FIG .6 -- NO R MALIZED REPETITIVE PEAK BREAKO VER
CURRENT vs JUNCTIO N TEM PERATURE FIG. 7 -- ON-STATE CURRENT vs ON-STATE VOLTAGE
GGGGGGG(TYPICAL)
0.6
0.8
1
2
4
6
8
10
20
40
60
80
100
200
400
600
468 2 16482 648
2 x 10-3 1 x 10-2 1 x 10-1
f=20 kHz
f=10 kHz
f=5 kHz
f=1 kHz
f=100 kHz
f=10 kHz
Repetition Frequency f=5 Hz
Non- Repeated
to
l/f
Current
VBO Firing
ITRM
Waveform
di/dt Limit Line
TJ=125o C Max
Pulse base width (to) - mSec.
Repetitive Peak On-State Current (ITRM) - Amps
0
-2
-6
-4
-12
-10
-8
-40 -20 0 +20 +40 +60
+2
+4
+80 +120+100 +140
+25
Percentage of VBO Change - %
Junction Temperature (TJ) - ° C
7
6
4
5
1
2
3
20 40 50 60 80 90
8
9
100 120110 1307030
Repetitive Peak Breakover
Current (IBO) Multiplier
Junction Temperature (TJ) - ° C
V=VBO
7
6
4
5
1
2
3
0 1.0 2.0 2.2 2.6 2.8
8
9
3.0 3.43.2 3.62.40.8
Positive or Negative Instantaneous
On-State Current (iT) - Amps
Positive or Negative Instantaneous On-State Voltage (VT) - Volts
0
1.2 1.61.4 1.8
TL =25° C
Kxx01G
S1
PUSH
TO
TEST
TRACE STOPS
100Ω
1%
SWITCH TO TEST IN
EACH DIRECTION
DEVICE
UNDER
TEST
SCOPE
S1
100-250
VAC
60 Hz
IPK
IH
SCOPE INDICATIONS
100Ω
2W
10μF
-
250V
+
+
-
10μF
450V
120VAC
60Hz
XENON LAMP
K2200G
4KV
SIDAC
200-
400V
TRIGGER
TRANSFORMER
20:1
20MΩ
.01μF
400V
24 VAC
60 Hz
50V
-+
10μF
4.7μF
100V 4.7 kΩ
1/2W
200V
K1200E
SIDAC
H.V.
IGNITOR
+
-
+
-
4.7μF
100V 1.2μF
100-250
VAC
60 Hz
100-250
VAC
60 Hz
SIDACSCR
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BLGALAXY ELECTRICAL
Document Number 0290001
4.
FIG.13 -- DYNAMIC HOLDING CURRENT TEST
CIRCUIT FO R SIDACS
RATINGS AND CHARACTERISTIC CURVES KG --- SERIES
FIG.8 -- POWER DI SSIPATION (TYPICAL) vs ON-STATE
MMMMMMMM CURRENT FIG.9 -- COMPARISON OF SIDAC vs SCR
FI G. 10 -- LGNITOR CI RCUIT (LOW VOLTAGE INPUT) FIG.11 -- TYP ICAL HI GH P RESSURE SODIUM
L A MP FIRING CIRCUIT
FIG .12 - - XENON L AMP F LASHING CIR CU IT
1.8
1.6
1.2
1.4
0.6
0.8
1.0
01.0
2.0
2.2
0.8
Average On-State Power Dissipation
[PD(AV)] - Watts
RMS On-State Current [IT(RMS)] - Amps
0.4
0.2 0.60.4
0.2
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: See Figure 9.15
Kxx01G
120 VAC
60 Hz
BALLAST
0.47μF
400V
SIDAC
3.3 kΩLAMP
16 mH
120 VAC
220 VAC
60 Hz
220 VAC
SIDAC 0.22μF
7.5 kΩLAMP
BALLAST
INPUT
50Ω
50Ω
VBB1=10V VBB2=0
2N6127
(or equivalent)
(See Note B)
RBB2=100Ω
VCE MONITOR
TIP-47
VCC=20V
RS=0.1Ω
IC MONITOR
100mH
+
-
+
-
SIDAC VBO
0
0.63 A
5 V
0 V
INPUT
VOLTAGE
COLLECTOR
CURRENT
10 V
VCE(sat)
tw≈3 ms
(See Note A)
tw
100 mS
COLLECTOR
CURRENT
RBB1=150Ω
VOLTAGE AND CURRENT WAVEFORMS
TEST CIRCUIT
NOTE A: Input pulse width is increased until ICM = 0.63A.
NOTE B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected.
The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the
transistor could be destroyed.
DC(IN)
V≥VBO
(a) Circuit
R
Vc
CIL
SIDAC
RL
(b) Waveforms
VBO
VC
IL
t
t
VIN-VTM
Rmin≥IH(MIN)
VIN-VBO
Rmax≤IBO
100-250
VAC
60Hz IH
VBO
LOAD
VBO
VBO
120-145°
CONDUCTION
ANGLE LOAD CURRENT
IH
IH
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BLGALAXY ELECTRICAL
Document Number 0290001
5.
FIG.16 -- SIDAC ADDED TO PROTECT TRANSISTOR FOR TYP ICAL TRANSISTOR INDUCTIVE
VVVVVVVVVVVVVVVVVLOAD SWITCHING REQUIREMENTS
RATINGS AND CHARACTERISTIC CURVES KG --- SERIES
FIG.14 -- BASIC SIDAC CIRCUIT
FIG.15 -- RELAXATION OSCILLATOR USING a SIDAC
