MG400Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H High Power & High Speed Switching Applications Unit: mm * Enhancement-mode * The electrodes are isolated from case. E G E C 24 0.3 20 0.3 29 0.3 JAPAN 80 0.8 93 0.3 Equivalent Circuit 108 0.8 6 0.5 22.5 0.6 22.5 0.6 E 106 0.8 G (B) JEITA Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES 20 V DC IC 400 1 ms ICP 800 DC IF 400 1 ms IFM 800 Collector power dissipation (Tc = 25C) PC 2650 W Junction temperature Tj 150 C Storage temperature range Tstg -40 to 125 C Isolation voltage VIsol 2500 (AC 1 minute) V Terminal 3 Mounting 3 Collector current Forward current 2-109F1A Weight: 465 g (typ.) Maximum Ratings (Ta = 25C) Characteristics 60 0.8 JEDEC TOSHIBA 3.5 0.3 2 1 35 2 0.6 26 C 54 0.6 39 MAX E Screw torque 4- 6.6 0.3 62 0.8 High input impedance 2-M6 35 0.8 48 0.3 * 20 0.5 2-M4 1 http://store.iiic.cc/ A A N*m 2003-12-19 MG400Q1US65H Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = 20 V, VCE = 0 500 nA Collector cut-off current ICES VCE = 1200 V, VGE = 0 4.0 mA VGE (off) IC = 400 mA, VCE = 5 V V Gate-emitter cut-off voltage Collector-emitter saturation voltage VCE (sat) Input capacitance 7.0 3.0 4.0 Tc = 125C 3.6 34000 0.05 0.05 0.10 0.55 tf 0.05 0.15 toff 0.60 td (on) Rise time Switching time VCE = 10 V, VGE = 0, f = 1 MHz Cies Turn-on delay time IC = 400 A, VGE = 15 V 4.0 Tc = 25C tr Turn-on time ton Turn-off delay time td (off) Fall time Turn-off time Inductive load VCC = 600 V, IC = 400 A VGE = 15 V, RG = 2.4 V pF s Forward voltage VF IF = 400 A, VGE = 0 2.4 3.5 V Reverse recovery time trr IF = 400 A, VGE = -10 V 0.25 s Transistor stage 0.047 Diode stage 0.1 Inductive load VCC = 600 V, IC = 400 A VGE = 15 V, RG = 2.4 Tc = 125C 40 40 Thermal resistance Rth (j-c) Turn-on Eon Turn-off Eoff Switching loss C/W mJ Note: Switching time measurement circuit and input/output waveforms RG VGE IF 90% 10% 0 -VGE IC VCC L trr IC RG 90% 90% VCE 0 10% tf td (off) toff 2 http://store.iiic.cc/ 10% td (on) tr ton 2003-12-19 MG400Q1US65H IC - VCE (sat) IC - VCE (sat) 800 800 15 V 20 V 18 V IC (A) 18 V 400 PC = 2650 W 200 0 0 12 V Collector current IC (A) Collector current 600 VGE = 8 V Common emitter Tc = 25C 2 4 6 8 Collector-emitter voltage VCE 400 VGE = 8 V 200 0 0 10 (V) Common emitter Tc = 125C 2 4 6 Collector-emitter voltage 8 VCE 10 (V) VCE - VGE 16 VCE Collector-emitter voltage 12 8 IC = 800 A 4 Common emitter Tc = 125C (V) Common emitter Tc = 25C (V) VCE 10 V 600 VCE - VGE 16 Collector-emitter voltage 15 V 20 V 10 V 12 V 400 A 12 8 IC = 800 A 400 A 4 200 A 200 A 0 0 4 8 12 Gate-emitter voltage 16 VGE 0 0 20 4 8 Gate-emitter voltage (V) IC - VGE Common emitter VCE = 5 V (A) 600 400 Tc = 125C 200 16 VGE 20 (V) IF - VF 800 Forward current IF Collector current IC (A) 800 12 25C Common cathode VGE = 0 600 400 Tc = 125C 200 25C -40C 0 0 4 8 Gate-emitter voltage 12 VGE 0 0 16 (V) 1 2 Forward voltage 3 http://store.iiic.cc/ 3 4 VF (V) 2003-12-19 MG400Q1US65H Switching time - IC : Tc = 25C : Tc = 125C toff (s) td (off) ton tr 0.1 Switching time Switching time Switching time - IC 1 Common emitter VCC = 600 V VGE = 15 V RG = 2.4 (s) 1 td (on) 0.1 tf Common emitter VCC = 600 V VGE = 15 V RG = 2.4 0.01 10 100 : Tc = 25C : Tc = 125C 0.01 10 1000 100 Collector current IC (A) 1000 Collector current IC (A) Switching time - RG Switching time - RG 1 10 ton td (on) Switching time Switching time (s) (s) tr 0.1 0.01 0 toff 1 td (off) tf 0.1 Common emitter VCC = 600 V IC = 400 A VGE = 15 V : Tc = 25C : Tc = 125C 20 10 Gate resistance RG 0.01 0 40 30 () Gate resistance Switching loss (mJ) Switching loss (mJ) Eon Eoff Edsw 10 1 0 Common emitter VCC = 600 V VGE = 15 V RG = 2.4 100 200 300 40 30 RG () Switching loss - RG 1000 : Tc = 25C : Tc = 125C 20 10 Switching loss - IC 100 Common emitter VCC = 600 V IC = 400 A VGE = 15 V : Tc = 25C : Tc = 125C 400 Common emitter VCC = 600 V IC = 400 A VGE = 15 V Eon 100 Eoff 10 Edsw : Tc = 25C : Tc = 125C 1 0 500 Collector current IC (A) 10 20 Gate resistance 4 http://store.iiic.cc/ 30 RG 40 () 2003-12-19 MG400Q1US65H VCE, VGE - QG C - VCE 1600 100000 16 VCE = 0 800 8 200 V 400 V 600 V 400 4 (pF) 12 Capacitance C 1200 VGE (V) Cies RL = 1.5 Tc = 25C Gate-emitter voltage Collector-emitter voltage VCE (V) Common emitter Coes 10000 Cres 1000 Common emitter VGE = 0 f = 1 MHz Tc = 25C 0 0 800 2400 1600 Charge QG 3200 100 0.01 4000 (nC) 0.1 1 Collector-emitter voltage Short circuit SOA 10 VCE 100 (V) Reverse bias SOA 6 1000 IC (A) (x times) 5 Collector current Collector current 4 3 2 VCC < = 900 V 1 100 10 1 Tj < = 125C tw = 5 s 0 0 200 Tj < = 125C VGE = 15 V RG = 2.4 400 600 800 Collector-emitter voltage 1000 VCE 1200 0.1 0 1400 (V) 500 Collector-emitter voltage 1500 1000 VCE (V) Rth (t) - tw Transient thermal resistance Rth (t) (C/W) 1 Diode stage 0.1 Transistor stage 0.01 Tc = 25C 0.001 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 5 http://store.iiic.cc/ 2003-12-19 MG400Q1US65H RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 http://store.iiic.cc/ 2003-12-19