MG400Q1US11 - Toshiba - Datasheet.Directory

MG400Q1US65H

2003-12-19

1

TOSHIBA IGBT Module Silicon N Channel IGBT

MG400Q1US65H

High Power & High Speed Switching

Applications

• High input impedance

• Enhancement-mode

• The electrodes are isolated from case.

Equivalent Circuit

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-emitter voltage VCES 1200 V

Gate-emitter voltage VGES ±20 V

DC IC 400

Collector current

1 ms ICP 800

A

DC IF 400

Forward current

1 ms IFM 800

A

Collector power dissipation

(Tc = 25°C) PC 2650 W

Junction temperature Tj 150 °C

Storage temperature range Tstg −40 to 125 °C

Isolation voltage VIsol 2500

(AC 1 minute) V

Terminal ⎯ 3

Screw torque

Mounting ⎯ 3

N·m

Unit: mm

E

G

C

JAPAN

35 0.8

62 0.8

108 0.8

93 0.3

48 0.3

80 0.8

20 0.5

29 0.324 0.3 20 0.3

2–M4 2–M6 0.3

6.64–

1

35

2

39

MAX

0.6

26

2

106 0.8

6 0.5

22.5 0.6 22.5 0.6

3.5 0.3

54 0.6

60 0.8

JEDEC ―

JEITA ―

TOSHIBA 2-109F1A

Weight: 465 g (typ.)

G (B)

E

E C

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MG400Q1US65H

2003-12-19

2

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGES V

GE = ±20 V, VCE = 0 ⎯ ⎯ ±500 nA

Collector cut-off current ICES V

CE = 1200 V, VGE = 0 ⎯ ⎯ 4.0 mA

Gate-emitter cut-off voltage VGE (off) I

C = 400 mA, VCE = 5 V 4.0 ⎯ 7.0 V

Tc = 25°C ⎯ 3.0 4.0

Collector-emitter saturation voltage VCE (sat) IC = 400 A,

VGE = 15 V Tc = 125°C ⎯ 3.6 ⎯

V

Input capacitance Cies V

CE = 10 V, VGE = 0, f = 1 MHz ⎯ 34000 ⎯ pF

Turn-on delay time td (on) ⎯ 0.05 ⎯

Rise time tr ⎯ 0.05 ⎯

Turn-on time ton ⎯ 0.10 ⎯

Turn-off delay time td (off) ⎯ 0.55 ⎯

Fall time tf ⎯ 0.05 0.15

Switching time

Turn-off time toff

Inductive load

VCC = 600 V, IC = 400 A

VGE = ±15 V, RG = 2.4 Ω

⎯ 0.60 ⎯

µs

Forward voltage VF I

F = 400 A, VGE = 0 ⎯ 2.4 3.5 V

Reverse recovery time trr I

F = 400 A, VGE = −10 V ⎯ 0.25 ⎯ µs

Transistor stage ⎯ ⎯ 0.047

Thermal resistance Rth (j-c)

Diode stage ⎯ ⎯ 0.1

°C/W

Turn-on Eon ⎯ 40 ⎯

Switching loss

Turn-off Eoff

Inductive load

VCC = 600 V, IC = 400 A

VGE = ±15 V, RG = 2.4 Ω

Tc = 125°C ⎯ 40 ⎯

mJ

Note: Switching time measurement circuit and input/output waveforms

IC

RG

L

IF

−VGE

VCC

VCE

VGE

IC

0

90%

10% 10%

90%

td (off)

toff

tftr

td (on)

ton

10%

trr

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MG400Q1US65H

2003-12-19

3

Collector-emitter voltage VCE (V)

IC – VCE (sat)

Collector current IC (A)

Collector-emitter voltage VCE (V)

IC – VCE (sat)

Collector current IC (A)

Gate-emitter voltage VGE (V)

VCE – VGE

Collector-emitter voltage VCE (V)

Gate-emitter voltage VGE (V)

VCE – VGE

Collector-emitter voltage VCE (V)

Gate-emitter voltage VGE (V)

IC – VGE

Collector current IC (A)

Forward voltage VF (V)

IF – VF

Forward current IF (A)

12 V

0

200

400

600

800

2 4 6 8 10

Common emitter

Tc = 25°C

VGE = 8 V

PC = 2650 W

10 V

20 V

18

V

15 V

0

200

400

600

800

2 4 6 8 10

VGE = 8 V

10 V

12 V

20 V

18 V

15 V

Common emitter

Tc = 125°C

0

4

8

12

16

4 8 12 16 20

Common emitter

Tc = 25°C

IC = 800 A

200 A

400 A

0

200

400

600

800

4 8 12 16

Common emitter

VCE = 5 V

Tc = 125°C

−40°C

25°C

0

200

400

600

800

1 2 3 4

Tc = 125°C

25°C

Common cathode

VGE = 0

0

4

8

12

16

4 8 12 16 20

Common emitter

Tc = 125°C

IC = 800 A

200 A

400 A

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MG400Q1US65H

2003-12-19

4

Switching loss (mJ)

Switching time (µs)

Collector current IC (A)

Switching time – IC

Switching time (µs)

Collector current IC (A)

Switching time – IC

Switching time (µs)

Gate resistance RG (

Ω)

Switching time – RG

Switching time (µs)

Gate resistance RG (

Ω)

Switching time – RG

Collector current IC (A)

Switching loss – IC

Gate resistance RG (

Ω)

Switching loss – RG

Switching loss (mJ)

0.01

10

0.1

1

100 1000

: Tc = 25°C

: Tc

= 125°C

Common emitter

VCC = 600 V

VGE = ±15 V

RG = 2.4 Ω

tr

ton

td (on)

1

10

1000

040 20

Eon

Eoff

Edsw

: Tc = 25°C

: Tc = 125°C

Common emitter

VCC = 600 V

IC = 400 A

VGE = ±15 V

100

10 30

0.01

0.1

10

040 20

Common emitter

VCC = 600 V

IC = 400 A

VGE = ±15 V

toff

td

(

off

)

tf

1

10 30

: Tc

= 25°C

: Tc = 125°C

0.01

10

0.1

1

100 1000

toff

td (off)

tf

Common emitter

VCC = 600 V

VGE = ±15 V

RG = 2.4 Ω

: Tc = 25°C

: Tc

= 125°C

1

100

0 500200

Eoff

Edsw

Eon

: Tc = 25°C

: Tc

= 125°C

Common emitter

VCC = 600 V

VGE = ±15 V

RG = 2.4 Ω

10

100 300 400

0.01

0.1

1

0 4020

tr

td (on)

ton

Common emitter

VCC = 600 V

IC = 400 A

VGE = ±15 V

30 10

: Tc = 25°C

: Tc

= 125°C

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MG400Q1US65H

2003-12-19

5

Transient thermal resistance

Rth (t) (°C/W)

Collector current IC (A)

Charge QG (nC)

VCE, VGE – QG

Collector-emitter voltage VCE (V)

C – VCE

Capacitance C (pF)

Collector-emitter voltage VCE (V)

Short circuit SOA

Collector current (x times)

Collector-emitter voltage VCE (V)

Reverse bias SOA

Pulse width tw (s)

Rth (t) – tw

0

3

6

0 400 1400200 800 1200

VCC

<

=900 V

Tj

<

=125°C

tw = 5 µs

5

4

2

1

600 1000

0.1

1

1000

0 500 1500

Tj

<

=

125°C

VGE = ±15 V

RG = 2.4 Ω

100

1000

10

100

0.01

10000

100000

1 100

Cies

Coes

Cres

Common emitter

VGE = 0

f = 1 MHz

Tc = 25°C

1000

0.1 10

0.001

0.1

1

0.1 10

Diode stage

Transistor stage

Tc = 25°C

0.01

0.01 1

Gate-emitter voltage VGE (V)

VCE = 0

8

16

4

12

0

800

1600

1600 4000

Common emitter

RL = 1.5 Ω

Tc = 25°C

400

1200

800 3200 2400

200 V 400 V 600 V

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MG400Q1US65H

2003-12-19

6

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of

TOSHIBA or others.

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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

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030619EAA

RESTRICTIONS ON PRODUCT USE

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