TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS Designed for Complementary Use with TIP105, TIP106 and TIP107 80 W at 25C Case Temperature 8 A Continuous Collector Current Maximum VCE(sat) of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL TIP101 V CBO E T E L O S B O TIP102 TIP100 Collector-emitter voltage (IB = 0) TIP101 V CEO TIP102 Emitter-base voltage UNIT 60 TIP100 Collector-base voltage (IE = 0) VALUE 80 V 100 60 80 V 100 VEBO 5 V IC 8 A ICM 15 A IB 1 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 80 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 2 W 1/2LIC2 10 mJ Tj -65 to +150 C Tstg -65 to +150 C TL 260 C Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.64 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 , V BE(off) = 0, RS = 0.1 , VCC = 20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE VEC Collector-emitter breakdown voltage TEST CONDITIONS MIN TIP100 IC = 30 mA IB = 0 (see Note 5) TYP MAX TIP101 80 TIP102 100 V VCE = 30 V IB = 0 TIP100 50 VCE = 40 V IB = 0 TIP101 50 VCE = 50 V IB = 0 TIP102 50 VCB = 60 V IE = 0 TIP100 50 VCB = 80 V IE = 0 TIP101 50 VCB = 100 V IE = 0 TIP102 50 VEB = 5V IC = 0 Forward current VCE = 4V IC = 3 A transfer ratio VCE = 4V IC = 8 A Collector-emitter IB = 6 mA IC = 3 A saturation voltage IB = 80 mA IC = 8 A VCE = IC = 8 A Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Base-emitter voltage Parallel diode forward voltage 4V 8 1000 (see Notes 5 and 6) 8A A mA 20000 2 (see Notes 5 and 6) 2.5 (see Notes 5 and 6) IB = 0 A 200 E T E L O S B O IE = UNIT 60 (see Notes 5 and 6) V 2.8 V 3.5 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance CC Thermal capacitance of case MIN TYP MAX UNIT 1.56 C/W 62.5 C/W 0.9 J/C resistive-load-switching characteristics at 25C case temperature PARAMETER td Delay time tr Rise time ts Storage time tf Fall time TEST CONDITIONS MIN MAX UNIT 35 ns IC = 8 A IB(on) = 80 mA IB(off) = -80 mA 350 ns VBE(off) = -5 V RL = 5 tp = 20 s, dc 2% 1.8 s 2.45 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AA 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40C TC = 25C TC = 100C 10000 1000 tp = 300 s, duty cycle < 2% IB = I C / 100 1*5 1*0 E T E L O S B O VCE = 4 V tp = 300 s, duty cycle < 2% 100 0*5 TCS130AB 2*0 1*0 10 0*5 0*5 IC - Collector Current - A 1*0 TC = -40C TC = 25C TC = 100C 10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AC VBE(sat) - Base-Emitter Saturation Voltage - V 3*0 2*5 TC = -40C TC = 25C TC = 100C 2*0 1*5 1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 10 IC - Collector Current - A Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS130AA tp = 100 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 5 ms, d = 0.1 = 10% DC Operation 10 1*0 E T E L O S B O TIP100 TIP101 TIP102 0*1 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.