© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 4 1Publication Order Number:
NCV4269A/D
NCV4269A
5.0 V, 3.3 V Micropower
150 mA LDO Linear
Regulator with DELAY,
Adjustable RESET, and
Sense Output
The NCV4269A is a 5.0 V and 3.3 V precision micropower voltage
regulator with an output current capability of 150 mA.
The output voltage is accurate within ±2.0% with a maximum
dropout voltage of 0.5 V at 100 mA. Low quiescent current is a feature
drawing only 190 mA with a 1.0 mA load. This part is ideal for any and
all battery operated microprocessor equipment.
Microprocessor control logic includes an active reset output RO
with delay and a SI/SO monitor which can be used to provide an early
warning signal to the microprocessor of a potential impending reset
signal. T he u se o f t he S I/SO m onitor a llows t he m icroprocessor t o f inish
any signal processing before the reset shuts the microprocessor down.
The active Reset circuit operates correctly at an output voltage as
low as 1.0 V. The Reset function is activated during the power up
sequence or during normal operation if the output voltage drops
outside the regulation limits.
The reset threshold voltage can be decreased by the connection of an
external resistor divider to the RADJ lead. The regulator is protected
against reverse battery, short circuit, and thermal overload conditions.
The device can withstand load dump transients making it suitable for
use in automotive environments. The device has also been optimized
for EMC conditions.
Features
•5.0 V and 3.3 V Output Voltage Options, ± 2.0% Accuracy
•Low 190 mA Quiescent Current
•Active Reset Output Low Down to VQ = 1.0 V
•Adjustable Reset Threshold
•150 mA Output Current Capability
•Fault Protection
♦+60 V Peak Transient Voltage
♦−40 V Reverse Voltage
♦Short Circuit
♦Thermal Overload
•Early Warning through SI/SO Leads
•Internally Fused Leads in SO−14 and SO−20 Packages
•Integrated Pullup Resistor at Logic Outputs (To Use External
Resistors, Select the NCV4279A)
•Very Low Dropout Voltage
•Electrical Parameters Guaranteed Over Entire Temperature Range
•NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•These are Pb−Free Devices
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SO−14
D2 SUFFIX
CASE 751A
1
14
MARKING
DIAGRAMS
1
NCV4269AxG
AWLYWW
14
X = 5 (5.0 V Output)
= 3 (3.3 V Output)
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G, G= Pb Free
SO−8
D1 SUFFIX
CASE 751
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 16 of this data sheet.
1
84269Ax
ALYW
G
1
8
1
8
4269Ax
ALYW
G
1
8
SO−8
EXPOSED PAD
PD SUFFIX
CASE 751AC
20
1
NCV4269Ax
AWLYYWWG
SO−20
DW SUFFIX
CASE 751D
1
2
0
NCV4269A
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2
I
RO
Q
SO
RADJ
D
Figure 1. Block Diagram
GND
SI
Reference
or
RRO
RSO
Error
Amplifier
Reference
and Trim Current and
Saturation
Control
+
−
PIN CONNECTIONS
SORO QGND GNDGND GNDGND
114
GNDGND ID SIRADJ
120
NCNC GNDGND GND
GND GND
GND GNDGND NCNC ID SIRADJ
QNC SORO
SO−20LSO−14
GNDD
18
RORADJ
SOSI QI
SO−8
PACKAGE PIN DESCRIPTION
Package Pin Number Pin
Symbol Function
SO−8 SO−8 EP SO−14 SO−20L
3 3 1 1 RADJ Reset Threshold Adjust; if not used to connect to GND.
4 4 2 2 D Reset Delay; To Set Time Delay, Connect to GND with Capacitor
5 5 3, 4, 5, 6,
10, 11, 12 4, 5, 6, 7, 14,
15, 16, 17 GND Ground
− − − 3, 8, 9, 13, 18 NC No connection to these pins from the IC.
6 6 7 10 RO Reset Output; The Open−Collector Output has a 20 kW Pullup Resistor
to Q. Leave Open if Not Used.
7 7 8 11 SO Sense Output; This Open−Collector Output is Internally Pulled Up by
20 kW pullup resistor to Q. If not used, keep open.
8 8 9 12 Q 5 V or 3.3 V Output; Connect to GND with a 10 mF Capacitor, ESR < 5 W
1 1 13 19 I Input; Connect to GND Directly at the IC with a Ceramic Capacitor.
2 2 14 20 SI Sense Input; If not used, Connect to Q.
− EPAD − − EPAD Connect to ground potential or leave unconnected
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3
MAXIMUM RATINGS (TJ = −40°C to 150°C)
Parameter Symbol Min Max Unit
Input to Regulator VI
II−40
Internally Limited 45
Internally Limited V
Input Transient to Regulator VI− 60 V
Sense Input VSI
ISI −40
−1 45
1V
mA
Reset Threshold Adjust VRADJ
IRADJ −0.3
−10 7
10 V
mA
Reset Delay VD
ID−0.3
Internally Limited 7
Internally Limited V
Ground Iq50 − mA
Reset Output VRO
IRO −0.3
Internally Limited 7
Internally Limited V
Sense Output VSO
ISO −0.3
Internally Limited 7
Internally Limited V
Regulated Output VQ
IQ−0.5
−10 7.0
−V
mA
Junction Temperature
Storage Temperature TJ
TSTG −
−50 150
150 °C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
RECOMMENDED OPERATING RANGE
Input Voltage Operating Range
5.0 Version
3.3 Version
VI5.5
4.4 45
45
V
Junction Temperature Operating Range TJ−40 150 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
LEAD TEMPERATURE SOLDERING AND MSL
Parameter Symbol Value
MSL, 20−Lead LS Temperature 265°C Peak (Note 3) MSL 3
MSL, 8−Lead, 14−Lead, LS Temperature 265°C Peak (Note 3) MSL 1
MSL, 8−Lead EP, LS Temperature 260°C MSL 2
1. This device series incorporates ESD protection and exceeds the following ratings:
Human Body Model (HBM) ≤ 4.0 kV per AEC−Q100−002.
Machine Model (MM) ≤ 200 V per AEC−Q100−003.
2. Latchup Current Maximum Rating: ≤ 150 mA per AEC−Q100−004.
3. +5°C/−0°C, 40 Sec Max−at−Peak, 60 − 150 Sec above 217°C.
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4
THERMAL CHARACTERISTICS
Characteristic Test Conditions (Typical Values) Unit
SO−8 Package (Note 4)
Junction−to−Pin 4 ( Y − JL4, YL4)53.8 °C/W
Junction−to−Ambient Thermal Resistance (RqJA, qJA)170.9 °C/W
SO−8 EP Package (Note 4)
Junction−to−Pin 8 ( Y − JL8, YL8)23.7 °C/W
Junction−to−Ambient Thermal Resistance (RqJA, qJA)71.4 °C/W
Junction−to−Pad ( Y − JPad) 7.7 °C/W
SO−14 Package (Note 4)
Junction−to−Pin 4 ( Y − JL4, YL4)18.4 °C/W
Junction−to−Ambient Thermal Resistance (RqJA, qJA)111.6 °C/W
SO−20 Package (Note 4)
Junction−to−Pin 4 ( Y − JL4, YL4)21.8 °C/W
Junction−to−Ambient Thermal Resistance (RqJA, qJA)95.3 °C/W
4. 2 oz copper, 50 mm2 copper area, 1.5 mm thick FR4
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5
ELECTRICAL CHARACTERISTICS (−40°C ≤ TJ ≤ 150°C, VI = 13.5 V unless otherwise specified)
Characteristic Symbol Test Conditions Min Typ Max Unit
REGULATOR
Output Voltage (5.0 V Version) VQ1 mA v IQ v 100 mA, 6 V v VI v 16 V 4.90 5.00 5.10 V
Output Voltage (3.3 V Version) VQ1 mA v IQ v 100 mA, 5.5 V v VI v 16 V 3.234 3.30 3.366 V
Current Limit IQ− 150 200 500 mA
Current Consumption; Iq = II – IQIqIQ = 1 mA, RO, SO High − 190 250 mA
Current Consumption; Iq = II – IQIqIQ = 10 mA, RO, SO High − 250 450 mA
Current Consumption; Iq = II – IQIqIQ = 50 mA, RO, SO High − 2.0 3.0 mA
Dropout Voltage (5.0 V Version) Vdr VI = 5 V, IQ = 100 mA − 0.25 0.5 V
Load Regulation DVQIQ = 5 mA to 100 mA − 10 20 mV
Line Regulation DVQVI = 6 V to 26 V IQ = 1 mA − 10 30 mV
RESET GENERATOR
Reset Switching Threshold
5.0 V Version
3.3 V Version
VRT −
−4.50
2.97 4.65
3.07 4.80
3.17
V
Reset Adjust Switching Threshold
5.0 V Version
3.3 V Version
VRADJ,TH VQ > 3.5 V
VQ > 2.3 V 1.26
1.26 1.35
1.35 1.44
1.44
V
Reset Pullup Resistance RRO,INT − 10 20 40 kW
Reset Output Saturation Voltage VRO,SAT VQ < VRT, RRO, INT − 0.1 0.4 V
Upper Delay Switching Threshold
5.0 V Version
3.3 V Version
VUD −
−1.4
0.7 1.8
1.23 2.2
1.6
V
Lower Delay Switching Threshold
5.0 V Version
3.3 V Version
VLD −
−0.3
0.3 0.45
0.49 0.60
0.60
V
Saturation Voltage on Delay Capacitor VD,SAT VQ < VRT − − 0.1 V
Charge Current
5.0 V Version
3.3 V Version
ID,C VD = 1 V
VD = 1 V 3.0
3.0 6.5
4.3 9.5
7.0
mA
Delay Time L ³ H tdCD = 100 nF 17 28 73 ms
Delay Time H ³ L tRR CD = 100 nF − 3.15 − ms
INPUT VOLTAGE SENSE
Sense Threshold High VSI,High − 1.24 1.31 1.38 V
Sense Threshold Low VSI,Low − 1.16 1.20 1.28 V
Sense Output Saturation Voltage VSO,Low VSI < 1.20 V; VQ > 3 V; RSO − 0.1 0.4 V
Sense Resistor Pullup RSO,INT − 10 20 40 kW
Sense Input Current ISI −−1.0 0.1 1.0 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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6
Figure 2. Measuring Circuit
RADJ1
VI
II
IRADJ
IQ
VSI
CD
100 nF VD
IDIqVRO VSO VRADJ
RADJ2
CI
470 nF
1000 mF
ISI VQ
CQ
22 mF
I
SI
D GND RO SO
RADJ
Q
VI
VQ
VD
VLD
VRT
VRO,SAT
VRO
t
t
< tRR
dV
dt +ID
CD
VUD
t
Power−on−Reset Thermal
Shutdown Voltage Dip
at Input Undervoltage Secondary
Spike Overload
at Output
t
tRR
td
Figure 3. Reset Timing Diagram
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7
Sense Input Voltage
VSI,High
VSI,Low
High
Low
t
t
Sense Output Voltage
Figure 4. Sense Timing Diagram
TYPICAL PERFORMANCE CHARACTERISTICS − 5.0 V OPTION
3.2
−40 0 40 80 120 16
0
TJ, (°C)
VD, (V)
0
2
4
6
8
10
12
14
16
−40 0 40 80 120 160
Figure 5. Charge Current ID,C vs. Temperature TJFigure 6. Switching Voltage VUD and VLD vs.
Temperature T
J
TJ, (°C)
I
D,C
, (
m
A)
VI = 13.5 V
VD = 1.0 V VI = 13.5 V
VUD
VLD
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
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TYPICAL PERFORMANCE CHARACTERISTICS − 5.0 V OPTION
35
0
I
q
, (mA)
VI, (V)
10 20 30 40 50
RL = 33 W
RL = 50 W
RL = 100 WRL = 200 W
1.7
−40
VRADJ,TH, (V)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
TJ, (°C)
0 40 80 120 16
0
IQ, (mA)
V
dr
, (mV)
TJ = 125°C
TJ = 25°C
TJ = −40°C
Figure 7. Drop Voltage Vdr vs. Output Current IQ
0
100
200
300
400
500
0 30 60 90 120 150 180
Figure 8. Reset Adjust Switching Threshold,
VRADJ,TH vs. Temperature TJ
Figure 9. Current Consumption Iq vs. Input
Voltage VI
Figure 10. Output Voltage VQ vs. Input Voltage VI
12
0
VQ (V)
VI, (V)
24681
0
10
8
6
4
2
0
RL = 50 W
30
25
20
15
10
5
0
Figure 11. Sense Threshold V
SI
vs. Temperature T
J
Figure 12. Output Voltage V
Q
vs. Temperature T
J
1.6
−40 0 40 80 120 160
TJ, (°C)
V
SI
, (V)
VI = 13.5 V
1.5
1.4
1.3
1.2
1.1
1.0
VSI, High
VSI, Low
5.2
−40 0 40 80 120 16
0
TJ, (°C)
VQ, (V)
VI = 13.5 V
5.1
5.0
4.9
4.8
4.7
4.6
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TYPICAL PERFORMANCE CHARACTERISTICS − 5.0 V OPTION
250
6
I
q
, (
m
A)
VI, (V)
IQ = 100 mA
8101214161820222426
1.6
01020 4050
IQ, (mA)
I
q
, (mA)
30
7
6
Iq, (mA)
VI, (V)
IQ = 100 mA
6
5
4
3
2
1
0
IQ = 50 mA
IQ = 10 mA
VI, (V)
I
Q
, (mA)
TJ = 125°C
TJ = 25°C
350
0 1020304050
300
250
200
150
100
50
0
12
02040 80 12
0
IQ, (mA)
Iq, (mA)
VI = 13.5 V
TJ = 25°C
10
8
6
4
2
0
Figure 13. Output Current Limit IQ vs. Input
Voltage VI
Figure 14. Current Consumption Iq vs. Output
Current IQ
Figure 15. Current Consumption Iq vs.
Output Current IQ
Figure 16. Quiescent Current Iq vs.
Input Voltage VI
60
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VI = 13.5 V
TJ = 25°C
100
810121416182022242
6
Figure 17. Quiescent Current Iq vs. Input Voltage VIFigure 18. Output Stability, Capacitance ESR
vs. Output Load Current
200
150
100
50
TJ = 25°C100
0
ESR (W)
OUTPUT CURRENT IN MILLIAMPS
Unstable Region
10
1
0.01 25 50 75 100 125 15
0
Stable Region for
2.2 mF to 10 mF
TJ = 125°C
0.1
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TYPICAL PERFORMANCE CHARACTERISTICS − 3.3 V OPTION
1.6
−40 0 40 80 120 16
0
TJ, (°C)
VD, (V)
0
2
4
6
8
10
−40 0 40 80 120 160
Figure 19. Charge Current ID,C vs. Temperature TJFigure 20. Switching Voltage VUD and VLD vs.
Temperature TJ
TJ, (°C)
I
D,C
, (
m
A)
VI = 13.5 V
VD = 1.0 V
VI = 13.5 V
VUD
VLD
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2.0
1.8
0
Iq, (mA)
VI, (V)
10 20 30 4
0
RL = 33 W
RL = 20 W
RL = 132 W
RL = 66 W
1.7
−40
V
RADJ,TH
, (V)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
TJ, (°C)
0 40 80 120 160
Figure 21. Reset Adjust Switching Threshold,
VRADJ,TH vs. Temperature TJ
Figure 22. Current Consumption Iq vs. Input
Voltage VI
Figure 23. Output Voltage VQ vs. Input Voltage VIFigure 24. Sense Threshold VSI vs. Temperature
T
J
0
V
Q
(V)
VI, (V)
246810
5
4
3
2
1
0
IQ = 100 mA
25
20
15
10
5
0
1.6
−40 0 40 80 120 1
60
TJ, (°C)
VSI, (V)
VI = 13.5 V
1.5
1.4
1.3
1.2
1.1
1.0
VSI, High
VSI, Low
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TYPICAL PERFORMANCE CHARACTERISTICS − 3.3 V OPTION
Figure 25. Output Voltage VQ vs. Temperature TJFigure 26. Output Current Limit IQ vs. Input
Voltage VI
3.32
−40 0 40 80 120 160
TJ, (°C)
V
Q
, (V)
VI = 13.5 V
3.30
3.28
3.26
3.24
3.22
3.20
3.40
3.38
3.36
3.34
1.6
01020 405
0
IQ, (mA)
Iq, (mA)
30
7
6
I
q
, (mA)
VI, (V)
IQ = 100 mA
6
5
4
3
2
1
0
IQ = 50 mA
IQ = 10 mA
VI, (V)
IQ, (mA)
TJ = 125°C
TJ = 25°C
350
0 102030405
0
300
250
200
150
100
50
0
12
0 20 40 80 120
IQ, (mA)
I
q
, (mA)
VI = 13.5 V
TJ = 25°C
10
8
6
4
2
0
Figure 27. Current Consumption Iq vs. Output
Current IQ
Figure 28. Current Consumption Iq vs.
Output Current IQ
Figure 29. Quiescent Current Iq vs.
Input Voltage V
I
Figure 30. Quiescent Current Iq vs. Input
Voltage V
I
60
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VI = 13.5 V
TJ = 25°C
100
8101214161820222426
TJ = 125°C250
6
Iq, (mA)
VI, (V)
IQ = 100 mA
810121416182022242
6
200
150
100
50
TJ = 25°C
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13
TYPICAL THERMAL CHARACTERISTICS
SO−8 Std Package NCV4269A, 1.0 oz
SO−8 Std Package NCV4269A, 2.0 oz
SO−14 w/6 Thermal Leads NCV4269A, 1.0 oz
SO−14 w/6 Thermal Leads NCV4269A, 2.0 oz
SO−20 w/8 Thermal Leads NCV4269A, 1.0 oz
SO−20 w/8 Thermal Leads NCV4269A, 2.0 oz
Figure 32. Junction−to−Ambient Thermal Resistance (qJA) vs. Heat Spreader Area
Figure 33. R(t) vs. Pulse Time
qJA (°C/W)
COPPER HEAT−SPREADER AREA (mm2)
70
0
600400300200100 5000
200
180
160
140
120
100
80
60
40
20
0
Single Pulse (SO−8 Std Package) PCB = 50 mm2, 2.0 oz
Single Pulse (SO−8 EP Package)
Single Pulse (SO−14 w/6 Thermal Leads) PCB = 50 mm2, 2.0 oz
Single Pulse (SO−20 w/8 Thermal Leads) PCB = 50 mm2, 2.0 oz
YLA (SO−8)
YLA (SO−14)
YLA (SO−20)
R(t) (°C/W)
PULSE TIME (s)
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100
0
1000
100
10
1
0.1
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14
APPLICATION DESCRIPTION
OUTPUT REGULATOR
The output is controlled by a precision trimmed reference.
The PNP output has base drive quiescent current control for
regulation while the input voltage is low, preventing over
saturation. Current limit and voltage monitors complement
the regulator design to give safe operating signals to the
processor and control circuits.
RESET OUTPUT (RO)
A reset signal, Reset Output, RO, (low voltage) is
generated as the IC powers up. After the output voltage VQ
increases above the reset threshold voltage VRT, the delay
timer D is started. When the voltage on the delay timer VD
passes VUD, the reset signal RO goes high. A discharge of
the delay timer VD is started when VQ drops and stays below
the reset threshold voltage VRT. When the voltage of the
delay timer VD drops below the lower threshold voltage VLD
the reset output voltage VRO is brought low to reset the
processor.
The reset output RO is an open collector NPN transistor
with an internal 20 kW pullup resistor connected to the
output Q, controlled by a low voltage detection circuit. The
circuit is functionally independent of the rest of the IC,
thereby guaranteeing that RO is valid for VQ as low as 1.0 V.
RESET ADJUST (RADJ)
The reset threshold VRT can be decreased from a typical
value of 4.65 V (3.04 V for 3.3 V Version) to as low as 3.5 V
(2.3 V for 3.3 V Version) by using an external voltage
divider co n nected from the Q lead to the pin RADJ, a s shown
in Figure 34. The resistor divider keeps the voltage above
the V RADJ,TH (typical 1.35 V) for the desired input voltages,
and overrides the internal threshold detector. Adjust the
voltage divider according to the following relationship:
VRT +VRADJ,TH @(RADJ1 )RADJ2)ńRADJ2 (eq. 1)
If the reset adjust option is not needed, the RADJ pin
should be connected to GND causing the reset threshold to
go to its default value.
RESET DELAY (D)
The reset delay circuit provides a delay (programmable by
capacitor C D) on the reset output lead RO. The delay lead D
provides charge current ID,C (typically 6.5 mA for 5 V
Version or 4.3 mA for 3.3 V Version) to the external delay
capacitor CD during the following times:
1. During Powerup (once the regulation threshold has
been exceeded).
2. After a reset event has occurred and the device is
back in regulation. The delay capacitor is set to
discharge when the regulation (VRT, reset
threshold voltage) has been violated. When the
delay capacitor discharges to VLD, the reset signal
RO pulls low.
SETTING THE DELAY TIME
The delay time is set by the delay capacitor CD and the
charge current ID. The time is measured by the delay
capacitor voltage charging from the low level of VDSAT to
the higher level VUD. The time delay follows the equation:
td+[CD(VUD *VD,SAT)]ńID,C (eq. 2)
Example (5 V Version):
Using CD = 100 nF.
Use the typical value for VD,SAT = 0.1 V.
Use the typical value for VUD = 1.8 V.
Use the typical value for Delay Charge Current ID = 6.5 mA.
td+[100 nF(1.8 *0.1 V)]ń6.5 mA+26.2 ms (eq. 3)
Q
GND
I
RADJ
NCV4269A
CQ**
10 mF
(2.2 mF)
RO
0.1 mF
Microprocessor
D
CD
VBAT VDD
SO
Figure 34. Application Diagram
SI
I/O I/O
RADJ2
RADJ1
RSI1
RSI2
CI*
*CI required if regulator is located far from the power supply filter.
** CQ − minimum cap required for stability is 2.2 mF while higher over/under−shoots may be
expected. Cap must operate at minimum temperature expected.
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15
SENSE INPUT (SI) / SENSE OUTPUT (SO) VOLTAGE
MONITOR
An on−chip comparator is available to provide early
warning to the microprocessor of a possible reset signal
(Figure 4). The output is from an open collector driver with
an i nternal 20 kW p ull up resistor t o output Q. T he reset s ignal
typically turns the microprocessor off instantaneously. This
can cause u npredictable r esults w ith t he m icroprocessor. The
signal r eceived f rom t he S O p in w ill a llow t he m icroprocessor
time to complete its present task before shutting down. This
function i s p erformed b y a c omparator r eferenced t o th e b and
gap voltage. The actual trip point can be programmed
externally using a resistor divider to the input monitor SI
(Figure 34). The values for RSI1 and RSI2 are selected for a
typical threshold of 1.20 V on the SI Pin.
SIGNAL OUTPUT
Figure 35 shows the SO Monitor timing waveforms as a
result of the circuit depicted in Figure 34. As the output
voltage (VQ) falls, the monitor threshold (VSI,Low), is
crossed. This causes the voltage on the SO output to go low
sending a warning signal to the microprocessor that a reset
signal may occur in a short period of time. TWARNING is the
time the microprocessor has to complete the function it is
currently working on and get ready for the reset
shutdown signal. When the voltage on the SO goes low and
the RO stays high the current consumption is typically
560 mA at 1 mA load current.
Figure 35. SO Warning Waveform Time Diagram
V
Q
SI
VRO
V
SI,Low
TWARNING
SO
STABILITY CONSIDERATIONS
The input capacitor CI in Figure 34 is necessary for
compensating i nput l ine reactance. P ossible o scillations c aused
by input inductance and input capacitance can be damped by
using a resistor of approximately 1.0 W in series with CI.
The output or compensation capacitor helps determine
three main characteristics of a linear regulator: startup delay,
load transient response and loop stability.
The capacitor value and type should be based on cost,
availability, size and temperature constraints. The
aluminum electrolytic capacitor is the least expensive
solution, but, if the circuit operates at low temperatures
(−25°C to −40°C), both the value and ESR of the capacitor
will vary considerably. The capacitor manufacturer’s data
sheet usually provides this information.
The 10 mF output capacitor CQ shown in Figure 34 should
work for most applications; however, it is not necessarily the
optimized solution. Stability is guaranteed at CQ is min
2.2 mF and max ESR is 10 W. There is no min ESR limit
which was proved with MURATA’s ceramic caps
GRM31MR71A225KA01 (2.2 mF, 10 V, X7R, 1206) and
GRM31CR71A106KA01 (10 mF, 1 0 V, X7R, 1206) directly
soldered between output and ground pins.
CALCULATING POWER DISSIPATION IN A SINGLE
OUTPUT LINEAR REGULATOR
The maximum power dissipation for a single output
regulator (Figure 34) is:
PD(max) +[VI(max) *VQ(min)]IQ(max) )VI(max)Iq(eq. 4)
where:
VI(max) is the maximum input voltage,
VQ(min) is the minimum output voltage,
IQ(max) is the maximum output current for the application,
and Iq is the quiescent current the regulator consumes at
IQ(max).
Once the value of PD(max) is known, the maximum
permissible value of RqJA can be calculated: (eq. 5)
RqJA = (150°C – TA) / PD
The value of RqJA can then be compared with those in the
package section of the data sheet. Those packages with
RqJA’ s less than the calculated value in equation 2 will keep
the die temperature below 150°C. In some cases, none of the
packages will be su fficient to dissipate the heat generated by
the IC, and an external heatsink will be required. The current
flow and voltages are shown in the
Measurement Circuit Diagram.
HEATSINKS
A heatsink effectively increases the surface area of the
package to improve the flow of heat away from the IC and
into the surrounding air.
Each material in the heat flow path between the IC and the
outside environment will have a thermal resistance. Like
series electrical resistances, these resistances are summed to
determine the value of RqJA:
RqJA +RqJC )RqCS )RqSA (eq. 6)
where:
RqJC = the junction−to−case thermal resistance,
RqCS = the case−to−heat sink thermal resistance, and
RqSA = the heat sink−to−ambient thermal resistance.
RqJC appears in the package section of the data sheet. Like
RqJA, it too is a function of package type. RqCS and RqSA are
functions of the package type, heatsink and the interface
between them. These values appear in data sheets of
heatsink manufacturers. Thermal, mounting, and
heatsinking considerations are discussed in the
ON Semiconductor application note AN1040/D, available
on the ON Semiconductor website.
NCV4269A
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16
ORDERING INFORMATION
Device Output Voltage Package Shipping†
NCV4269AD150G
5.0 V
SO−8
(Pb−Free) 98 Units/Rail
NCV4269AD150R2G SO−8
(Pb−Free) 2500 Tape & Reel
NCV4269APD50G SO−8 EP
(Pb−Free) 98 Units/Rail
NCV4269APD50R2G SO−8 EP
(Pb−Free) 2500 Tape & Reel
NCV4269AD250G SO−14
(Pb−Free) 55 Units/Rail
NCV4269AD250R2G SO−14
(Pb−Free) 2500 Tape & Reel
NCV4269ADW50G SO−20L
(Pb−Free) 38 Units/Rail
NCV4269ADW50R2G SO−20L
(Pb−Free) 1000 Tape & Reel
NCV4269AD133R2G 3.3 V SO−8
(Pb−Free) 2500 Tape & Reel
†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NCV4269A
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17
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
SEATING
PLANE
1
4
58
N
J
X 45_
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
BS
D
H
C
0.10 (0.004)
DIM
AMIN MAX MIN MAX
INCHES
4.80 5.00 0.189 0.197
MILLIMETERS
B3.80 4.00 0.150 0.157
C1.35 1.75 0.053 0.069
D0.33 0.51 0.013 0.020
G1.27 BSC 0.050 BSC
H0.10 0.25 0.004 0.010
J0.19 0.25 0.007 0.010
K0.40 1.27 0.016 0.050
M0 8 0 8
N0.25 0.50 0.010 0.020
S5.80 6.20 0.228 0.244
−X−
−Y−
G
M
Y
M
0.25 (0.010)
−Z−
Y
M
0.25 (0.010) ZSXS
M
____
1.52
0.060
7.0
0.275
0.6
0.024 1.270
0.050
4.0
0.155
ǒmm
inchesǓ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NCV4269A
www.onsemi.com
18
PACKAGE DIMENSIONS
SOIC−8 EP
CASE 751AC
ISSUE B
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉ
ÇÇ
ÇÇ
ÇÇ
H
C0.10
D
E1
A
D
PIN ONE
2 X
8 X
SEATING
PLANE
EXPOSED
GAUGE
PLANE
14
58
D
C0.10 A-B
2 X
E
B
e
C0.10
2 X
TOP VIEW
SIDE VIEW
BOTTOM VIEW
DETAIL A
END VIEW
SECTION A−A
8 X b
A-B0.25 D
C
C
C0.10
C0.20
A
A2
G
F
14
58
NOTES:
1. DIMENSIONS AND TOLERANCING PER
ASME Y14.5M, 1994.
2. DIMENSIONS IN MILLIMETERS (ANGLES
IN DEGREES).
3. DIMENSION b DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE
0.08 MM TOTAL IN EXCESS OF THE “b”
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
4. DATUMS A AND B TO BE DETERMINED
AT DATUM PLANE H.
DIM MIN MAX
MILLIMETERS
A1.35 1.75
A1 0.00 0.10
A2 1.35 1.65
b0.31 0.51
b1 0.28 0.48
c0.17 0.25
c1 0.17 0.23
D4.90 BSC
E6.00 BSC
e1.27 BSC
L0.40 1.27
L1 1.04 REF
F2.24 3.20
G1.55 2.51
h0.25 0.50
q0 8
h
AA
DETAIL A
(b)
b1
c
c1
0.25 L
(L1) q
PAD
E1 3.90 BSC
__
A1
LOCATION
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
Exposed
Pad
1.52
0.060
2.03
0.08
0.6
0.024 1.270
0.050
4.0
0.155
ǒmm
inchesǓ
SCALE 6:1
7.0
0.275
2.72
0.107
NCV4269A
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19
PACKAGE DIMENSIONS
SO−14
CASE 751A−03
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
−A−
−B−
G
P7 PL
14 8
71 M
0.25 (0.010) B M
S
B
M
0.25 (0.010) A S
T
−T−
F
RX 45
SEATING
PLANE D14 PL K
C
J
M
_DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A8.55 8.75 0.337 0.344
B3.80 4.00 0.150 0.157
C1.35 1.75 0.054 0.068
D0.35 0.49 0.014 0.019
F0.40 1.25 0.016 0.049
G1.27 BSC 0.050 BSC
J0.19 0.25 0.008 0.009
K0.10 0.25 0.004 0.009
M0 7 0 7
P5.80 6.20 0.228 0.244
R0.25 0.50 0.010 0.019
__ __
NCV4269A
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20
PACKAGE DIMENSIONS
SO−20 WB
CASE 751D−05
ISSUE G
20
1
11
10
B20X
H10X
C
L
18X A1
A
SEATING
PLANE
q
hX 45_
E
D
M
0.25 M
B
M
0.25 S
AS
B
T
eT
B
A
DIM MIN MAX
MILLIMETERS
A2.35 2.65
A1 0.10 0.25
B0.35 0.49
C0.23 0.32
D12.65 12.95
E7.40 7.60
e1.27 BSC
H10.05 10.55
h0.25 0.75
L0.50 0.90
q0 7
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
__
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