TPCP8006 - Toshiba - Datasheet.Directory

TPCP8006

2009-12-08

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)

TPCP8006

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to small and thin package

• Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.)

• High forward transfer admittance:|Yfs| = 36 S (typ.)

• Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)

• Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Drain-source voltage VDSS 20 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V

Gate-source voltage VGSS ±12 V

DC (Note 1) ID 9.1

Drain current

Pulse (Note 1) IDP 36.4

Drain power dissipation (t = 5 s)

(Note 2a) PD 1.68

Drain power dissipation (t = 5 s)

(Note 2b) PD 0.84

Single pulse avalanche energy

(Note 3) EAS 21.5 mJ

Avalanche current IAR 9.1 A

Repetitive avalanche energy

(Note 4) EAR 0.168 mJ

Channel temperature Tch 150 °C

Storage temperature range Tstg −55 to 150 °C

Note: For Notes 1 to 5, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e.operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

1,2,3 ：SOURCE

4 ：GATE

5,6,7,8：DRAIN

0.8

0.05

0.475

0.025

2.4 ± 0.1

0.05

0.65

2.9 ± 0.1

0.33 ± 0.05

0.17 ± 0.02

2.8 ± 0.1

0.28

＋0.1

－0.11

1.12

＋0.13

－0.12

1.12

＋0.13

－0.12

0.28

＋0.1

－0.11

JEDEC ⎯

JEITA ⎯

TOSHIBA 2-3V1K

Weight: 0.017g (typ.)

Circuit Configuration

Marking (Note 5)

1 2 3 4

8 7 6 5

Lot No.

1 2 3 4

8 7 6 5

8006

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TPCP8006

2009-12-08

Thermal Characteristics

Characteristic Symbol Max Unit

Thermal resistance, channel to ambient (t = 5 s)

(Note 2a) Rth (ch-a) 74.4 °C/W

Thermal resistance, channel to ambient (t = 5 s)

(Note 2b) Rth (ch-a) 148.8 °C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 9.1 A

Note 4: Repetitive rating: pulse width limited by maximum channel temperature.

Note 5: ● on the lower left of the marking indicates Pin 1.

* Weekly code (Three digits):

Week of manufacture

(01 for the first week of the year, continuing up to 52 or 53)

Year of manufacture

(The last digit of the year)

(b)

FR-4

25.4 × 25.4 × 0.8t

(Unit: mm)

(a)

FR-4

25.4 × 25.4 × 0.8t

(Unit: mm)

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TPCP8006

2009-12-08

Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±12 V, VDS = 0 V ⎯ ⎯ ±100 nA

Drain cut-off current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA

V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯

Drain-source breakdown

voltage V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.5 ⎯ 1.2 V

VGS = 2.5 V, ID = 4.5 A ⎯ 9.5 13.7

Drain-source ON-resistance RDS (ON)

VGS = 4.5 V, ID = 4.5 A ⎯ 6.5 10

mΩ

Forward transfer admittance |Yfs| VDS = 10 V, ID = 4.5 A 18 36 ⎯ S

Input capacitance Ciss ⎯ 1480 ⎯

Reverse transfer capacitance Crss ⎯ 330 ⎯

Output capacitance Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯ 470 ⎯

Rise time tr ⎯ 8 ⎯

Turn-on time ton ⎯ 16 ⎯

Fall time tf ⎯ 19 ⎯

Switching time

Turn-off time toff

Duty ≤ 1%, tw = 10 μs ⎯ 53 ⎯

Total gate charge

(gate-source plus gate-drain) Qg ⎯ 22 ⎯

Gate-source charge 1 Qgs1 ⎯ 4 ⎯

Gate-drain (“Miller”) charge Qgd

VDD ≈ 16 V, VGS = 5 V, ID = 9.1 A

⎯ 7 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 36.4 A

Forward voltage (diode) VDSF IDR = 9.1 A, VGS = 0 V ⎯ ⎯ −1.2 V

RL = 2.22 Ω

VDD ≈ 10 V

0 V

VGS

5 V

4.7 Ω

ID = 4.5 A

VOUT

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TPCP8006

2009-12-08

0.4

0.6

0.8

0 2 4 6 8 10

ID = 9.1 A

2.3

0.2

4.5

0.1 1 10 100

100

VGS = 2.5 V

4.5

0.1 1 10 100

100

25°C

100°C

Ta = −55°C

0 0.5 1 1.5 2 3 2.5

100

0 0.4 0.8 1.2 1.6

VGS = 1.4 V

1.5

1.6

1.7

1.8

1.9

0 0.2 0.4 0.6 1

1.8

0.8

1.7

VGS = 1.4 V

1.5

1.6

1.9 4 2

Forward transfer admittance |Yfs| (S)

Drain−source voltage VDS (V)

ID – VDS

Drain current ID (A)

Drain

−

source voltage VDS (V)

ID – VDS

Drain current ID (A)

Gate−source voltage VGS (V)

ID – VGS

Drain current ID (A)

Drain−source ON-resistance

RDS (ON) (mΩ)

Common source

Ta = 25°C

Pulse test

Common source

VDS = 10 V

Pulse test

Common source

Ta = 25°C

Pulse test

Common source

VDS = 10 V

Pulse test

|Yfs| – ID

RDS (ON) – ID

Drain−source voltage VDS (V)

Gate

−

source voltage VGS (V)

VDS – VGS

Common source

Ta = 25°C

Pulse test

Common source

Ta = 25°C

Pulse test

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TPCP8006

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VDD = 16 V

4 V

8 V

VGS

VDS

0 10 30 40 20

(1)

(2)

0.5

1.5

0 40 80 120 160

2.0

−80 −40 0 40 80 120 160

0.4

0.8

1.2

1.6

0.01 0.1 10 100

100

1000

10000

Ciss

Coss

Crss

0.1

100

−0.2 −0.4 −0.6 −0.8 −1.2

VGS = −1 V

−1

−80 −40 0 40 80 120 160

4.5 V

VGS = 2.5 V

ID = 2.3,4.5,9.1 A

Common source

VGS = 0 V

f = 1 MHz

Ta = 25°C

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain−source ON-resistance

RDS (ON) (mΩ)

Drain

−

source voltage VDS (V)

IDR – VDS

Drain reverse current IDR (A)

Drain−source voltage VDS (V)

C – VDS

Capacitance C (pF)

Ambient temperature Ta (°C)

Vth – Ta

Gate threshold voltage Vth (V)

Ambient temperature Ta (°C)

PD – Ta

Drain power dissipation PD (W)

Gate−source voltage VGS (V)

Dynamic input/output

characteristics

Drain−source voltage VDS (V)

Common source

Ta = 25°C

Pulse test

Common source

VDS = 10 V

ID = 1mA

Pulse test

Common source

ID = 9.1 A

Ta = 25°C

Single Pulse test

Common source

Pulse test

Total gate charge Qg (nC)

(1) Device mounted on a glass-epoxy

board (a)(Note 2a)

(2) Device mounted on a glass-epoxy

board (b) (Note 2b)

t = 5 s

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TPCP8006

2009-12-08

0.1

100

.1 1 1

t = 10 ms*

1 ms*

VDSS max

0.1

100

1000

0.001 0.01 0.1 110 100 1000

(1)

(2)

Safe operating area

Drain−source voltage VDS (V)

Drain current ID (A)

*: Single nonrepetitive pulse

Ta = 25°C

Curves must be derated

linearly with increase in

temperature.

rth(j−c) − tw

Pulse width tw (s)

Transient thermal impedance

th (°C/W)

(1) Device mounted on a glass-epoxy board (a) (Note 2a)

(2) Device mounted on a glass-epoxy board (b) (Note 2b)

Single pulse

ID max (pulsed)*

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TPCP8006

2009-12-08

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR

APPLICATIONS.

• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or

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noncompliance with applicable laws and regulations.

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