Z SILICONIX INC L6E D MM 8254735 0014841 1 my SF Silicone IRFF9220/9221 /9222/9223 P-Channel Enhancement Mode Transistors T=34-1% TO-205AF BOTTOM VIEW - PRODUCT SUMMARY wbncen | aap? | mage | & IRFF9220 -200 1.6 -2.5 IRFF9221 ~150 1.5 -2.5 1 DRAIN 2 GATE IRFF9222 ~200 2.4 -2.0 3 SOURCE IRFF9223 -150 2.4 ~2,0 ABSOLUTE MAXIMUM RATINGS (Tg = 25C Unless Otherwise Noted) IRFFE PARAMETERS/TEST CONDITIONS SYMBOL | 9220 9221 9222 9223 | UNITS Drain-Source Voltage Vos 200 150 200 150 Vv Gate-Source Voltage Ves _ 20 +20 20 +20 Continuous Drain Current Toe = 25C Ip 2.5 2.5 2.0 2.0 To = 100C 1.6 1.6 1.2 1.2 A Pulsed Drain Current? lpm 10 10 8 8 Avalanche Current (See Figure 9) la 2.6 2.5 2.0 2.0 Power Dissipation To = 25C Pp 20 20 20 20 WwW To = 100C 8 8 8 8 Operating Junction & Storage Temperature Range | Ty, Tstg -55 to 150 C Lead Temperature ('/;, from case for 10 sec.) Th 300 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case Rinuc 6.25 KW Junction-to-Ambient RingaA 175 INegative signs for current and voltage ratings have been omitted for the sake of clarity. 2Pulse width limited by maximum junction temperature (refer to transient thermai impedance data, Figure 14). 4-261- SILICONIX INC 18E D MM 8254735 goLyaya 3 = IRFF9220/9221 /9222/9223 $F Siliconix ELECTRICAL CHARACTERISTICS (Ty = 25C Unless Otherwise Noted) , T- 39. ig P-Channel Device - Negative Signs Have Been Omitted for Clarity LIMITS PARAMETER SYMBOL TEST CONDITIONS TYP | MIN MAX | UNIT STATIC BreakdovmVotage | IRFFESeT cosy | VONSS Vos = OV. lo = 260 HA 180 Vv Gate Threshold Voltage Vestn) Vos = Vas, Ip = 250 PA 2.0 40 Gate-Body Leakage lass Vos = OV, Vos = 20V 100 | nA Zero Gate Voltage Drain Current loss Vos = Vienoss: Vag = OV 250 | yA Vos = 0.8 X Vienjnss. Vag = OV, Ty = 125C 1000 Cire" rae 385 | oo toe Bes = OV 23 , Drain-Source On-State | [RFF9220, 9221 Vas = 10V, Ip = 1.5A 1.0 15 Resistancet IRFF9222, 9223 | Trogon 15 24 a IRFF9220, 9224 Vas = 10V. Ip = 115A 18 27 IRFF9222, 9223 Ty = 125C 26 43 Forward Transconductance! os Vos = 18Vilp = 15A 14 1.0 s DYNAMIC : Input Capacitance Cig 310 Cutput Capacitance Coss Vas = OV, Vog = 25 Vf = 1 MHz 110 pF Reverse Transter Capacttarice Cus 40 Total Gate Charge? Q 11 5.0 20 Gate-Source Charge? Qgs Vos = 0.5% Verjoss Vas = 10V.Ip =25A | 3.0 1.0 6.0 nc Gate-Drain Charge? Qoa . 45 3 7.0 Tun On Delay Time? tazon 10 40 Rise Time? % Voo = 100V, R, = 66.2 23 50 ns Tum-Oif Delay Time? taom Ip 1.5 A, Von = 10V, Rg = 25.0, 45 50 Fall Time? % 31 40 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (To = 25C) Continuous Curent | IRFF9220, 9221] Ig 25 IRFF9222, 9223 2.0 A Pulsed Current? IRFF220, 9221 Isat 10.0 IRFF9222, 9223 8.0 Forward Voltage! IRFF9220, 9221 Vsp Ip = Is, Vag = OV 7.0 Vv IRFF9222, 9223 68 Reverse Recovery Time tr Ip = Ig, dip/dt = 100 A/us 105 ns Reverse Recovery Charge Qn 0.23 uc 'Pulse test: Pulse Width < 300 jiseo, Duty Cycle <= 2%. 2inde: pendent of operating temperature, Pulse width limited by maximum Junction temperature (refer to transient thermal Impedance data, Figure 11). 4-262SILICONIX INC LBE D MM 8254735 0014843 5 mm Se IRFF9220/9221/9222/ 9223 TYPICAL CHARACTERISTICS (25C Unless Otherwise Specified) T-39-19 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 3.0 1 . E 25 cl Vag = 9 10 To=~85'C HI fe. 125 et, 2.5 = = / B 2.0 a ac ac =< 3 B18 3 3 5 E10 \ 1 Vy 2 2 0,5 0 WY | 0 2 4 6 & 10 0 2 4 6 8 10 Vos - DRAIN-TO-SOURCE VOLTAGE (V) Vas - GATE-TO-SOURCE VOLTAGE (Vv) Figure 3. Transconductance Figure 4. On-Resistance ~ To= -55C a 8 We Vas =10V 5 26C = 3 b 3 125C ty 8 3 g o & t f & = 0 1 2 3 4 5 0 2 4 6 8 10 lp - DRAIN CURRENT (A) lp - DRAIN CURRENT (A) Figure Capacitance Figure 6. Gate Charge 750 18.0 = O8xV, Dss 600 2 12.6 & a w ig 10.0 2 450 oO = 5 5 o 7.5 < 9 a& 300 o So it .0 t 3 . Qo 150 1 28 o oO > 0 0 0 10 20 30 40 50 0 70 16 20 26 Vos - DRAIN-TO-SOURCE VOLTAGE (Vv) Qg - TOTAL GATE CHARGE (nC) 4-263STLICONIX INC 18E D M@M@ 8254735 oo1yayy ? = IRFF9220/9221/9222/9223 TYPICAL CHARACTERISTICS (Cont'd) Figure 7. On-Resistance vs. Junction Temperature ~ Figure 8. Source-Drain Diode Forward Voltage SF Siliconix incorporated T-39-19 _ 2.00 7 100 Gs1475 V4 = Ww 9 S| B 2 q 1.50 yy aS Vv 8 ] = 150C Ww = 1.26 wy 10 5 A & = 1,00 1& 10 | a ! 3 0.75 a 7) 0.50 1 ~0 = -10 30 70 110 150 0 1 2 3 4 5 T; - JUNCTION TEMPERATURE (C) Vsp - SOURCE-TO-DRAIN VOLTAGE (V) THERMAL RATINGS Figure 9. Maximum Avalanche and Drain Current vs, Case Temperature Figure 10. Safe Operating Area 3.0 50 2.6 = 10 2 2 ; 5 1.5 3 q 2 oc = 1 3 1.0 & * i 0.5 * 0.1 0 0.05 0 25 50 75 100 125 150 5 10 100 500 Te - CASE TEMPERATURE (C) Vos - DRAIN-TO-SOURCE VOLTAGE (Vv) Operation in this area may be limited by roszon) Figure 11. Normalized Effective Transtent Thermal Impedance, Junction-to-Case 2 7 a { NORMALIZED EFFECTIVE TRANSI THERMAL IMPEDANCE 0.01 0.1 10+ 10 io? io71 1 SQUARE WAVE PULSE DURATION (seo) 4-264