APTGT600U170D4G Single switch Trench + Field Stop IGBT Power Module 1 3 5 2 VCES = 1700V IC = 600A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * * * * Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C Reverse Bias Safe Operating Area Tj = 125C 1200A@1600V TC = 25C TC = 80C TC = 25C Unit V A July, 2008 IC Max ratings 1700 1100 600 1200 20 2900 RBSOA Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT600U170D4G - Rev 2 Symbol VCES APTGT600U170D4G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 600A Tj = 125C VGE = VCE , IC = 24 mA VGE = 20V, VCE = 0V 5.2 Typ 2.0 2.4 5.8 Max Unit 5 2.4 mA 6.4 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn On Energy Eoff Turn Off Energy Isc Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=600A VCE=900V Inductive Switching (25C) VGE = 15V VBus = 900V IC = 600A RG = 2.4 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 600A RG = 2.4 VGE = 15V Tj = 125C VBus = 900V IC = 600A Tj = 125C RG = 2.4 VGE 15V ; VBus = 1000V tp 10s ; Tj = 125C Min Test Conditions Min 1700 Typ 51 1.8 nF 6.8 C 280 100 850 ns 150 330 100 1000 ns 230 200 mJ 190 2200 A Reverse diode ratings and characteristics Maximum Reverse Leakage Current IF DC forward current VF Diode Forward Voltage Err Reverse Recovery Energy trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=1700V IF = 600A VGE = 0V IF = 600A VR = 900V di/dt =5200A/s www.microsemi.com Tj = 25C Tj = 125C Tc=80C Tj = 25C Tj = 125C Tj = 25C 600 1.8 1.9 85 Tj = 125C 145 Tj = 25C 450 Tj = 125C 600 Tj = 25C 150 Tj = 125C 250 Max 750 1000 Unit V A A 2.2 V mJ July, 2008 IRRM Typ ns C 2-5 APTGT600U170D4G - Rev 2 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT600U170D4G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M4 M6 3500 -40 -40 -40 1 3 Typ Max 0.044 0.065 Unit C/W V 150 125 125 2 5 350 C N.m g www.microsemi.com 3-5 APTGT600U170D4G - Rev 2 July, 2008 D4 Package outline (dimensions in mm) APTGT600U170D4G Typical Performance Curve Output Characteristics 1200 1000 1000 800 TJ=125C 600 VGE=15V 400 400 200 200 VGE=9V 0 0 1 2 VCE (V) 3 4 0 1 2 3 VCE (V) 4 5 Energy losses vs Collector Current Transfert Characteristics 1200 500 VCE = 900V VGE = 15V RG = 2.4 TJ = 125C TJ=25C 1000 400 E (mJ) 800 600 TJ=125C 400 300 Eon Eoff 200 Er Er 100 200 0 0 5 6 7 8 9 10 0 11 200 Switching Energy Losses vs Gate Resistance 800 1000 1400 VCE = 900V VGE =15V IC = 600A TJ = 125C 1200 Eon 1000 IC (A) 600 600 Reverse Bias Safe Operating Area 1000 800 400 IC (A) VGE (V) E (mJ) VGE=13V VGE=19V 600 0 IC (A) TJ = 125C 800 TJ=25C IC (A) IC (A) Output Characteristics (VGE=15V) 1200 400 Eoff 800 600 VGE=15V TJ=125C RG=2.4 400 200 200 Er 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 0 30 400 800 1200 1600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.04 0.03 0.9 IGBT 0.7 0.01 0 0.00001 July, 2008 0.5 0.02 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT600U170D4G - Rev 2 Thermal Impedance (C/W) 0.05 APTGT600U170D4G Forward Characteristic of diode 1200 25 VCE=900V D=50% RG=2.4 TJ=125C TC=75C ZVS 20 15 1000 TJ=25C 800 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 30 ZCS 10 5 600 400 0 0 200 TJ=125C 200 hard switching 0 TJ=125C 400 IC (A) 600 0 800 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.07 0.06 0.9 0.05 0.7 0.04 Diode 0.5 0.03 0.02 0.01 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT600U170D4G - Rev 2 July, 2008 rectangular Pulse Duration (Seconds)