
APTGT600U170D4G
APTGT600U170D4G – Rev 2 July, 2008
www.microsemi.com 5-5
Forward Characteristic of d i ode
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
200
400
600
800
1000
1200
0 0.5 1 1.5 2 2.5 3
V
F
(V)
I
F
(A)
hard
switching
ZCS
ZVS
0
5
10
15
20
25
30
0 200 400 600 800
I
C
(A)
Fmax, Operatin g Frequency (kHz)
V
CE
=900V
D=50%
R
G
=2.4 Ω
T
J
=125°C
T
C
=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal I mpedance (°C/W)
Diode
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