APTGT600U170D4G
APTGT600U170D4G – Rev 2 July, 2008
www.microsemi.com 1-5
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1700 V
TC = 25°C 1100
IC Continuous Collector Current TC = 80°C 600
ICM Pulsed Collector Current TC = 25°C 1200
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 2900 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 1200A@1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
3
5
2
1
VCES = 1700V
IC = 600A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• M6 connectors for power
• M4 connectors for signal
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Single switch
Trench + Field Stop IGBT
Power Module
APTGT600U170D4G
APTGT600U170D4G – Rev 2 July, 2008
www.microsemi.com 2-5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 5 mA
Tj = 25°C 2.0 2.4
VCE(sat) Collector Emitter saturation Voltage VGE = 15V
IC = 600A Tj = 125°C 2.4 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 24 mA 5.2 5.8 6.4 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 51
Cres Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz 1.8 nF
QG Gate charge VGE=±15V, IC=600A
VCE=900V 6.8 µC
Td(on) Turn-on Delay Time 280
Tr Rise Time 100
Td(off) Turn-off Delay Time 850
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 600A
RG = 2.4Ω 150
ns
Td(on) Turn-on Delay Time 330
Tr Rise Time 100
Td(off) Turn-off Delay Time 1000
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 600A
RG = 2.4Ω 230
ns
Eon Turn On Energy Tj = 125°C 200
Eoff Turn Off Energy
VGE = ±15V
VBus = 900V
IC = 600A
RG = 2.4Ω Tj = 125°C 190
mJ
Isc Short Circuit data VGE ≤15V ; VBus = 1000V
tp ≤ 10µs ; Tj = 125°C 2200 A
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1700 V
Tj = 25°C 750
IRRM Maximum Reverse Leakage Current VR=1700V Tj = 125°C 1000 µA
IF DC forward current Tc=80°C 600 A
Tj = 25°C 1.8 2.2
VF Diode Forward Voltage IF = 600A
VGE = 0V Tj = 125°C 1.9 V
Tj = 25°C 85
Err Reverse Recovery Energy
Tj = 125°C 145
mJ
Tj = 25°C 450
trr Reverse Recovery Time Tj = 125°C 600 ns
Tj = 25°C 150
Qrr Reverse Recovery Charge
IF = 600A
VR = 900V
di/dt =5200A/µs
Tj = 125°C 250 µC
APTGT600U170D4G
APTGT600U170D4G – Rev 2 July, 2008
www.microsemi.com 3-5
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.044
RthJC Junction to Case Thermal Resistance Diode 0.065 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
°C
M4 1 2
Torque Mounting torque M6 3 5
N.m
Wt Package Weight 350 g
D4 Package outline (dimensions in mm)
APTGT600U170D4G
APTGT600U170D4G – Rev 2 July, 2008
www.microsemi.com 4-5
Typical Performance Curve
Output Characteristi cs (V
GE
=15V)
T
J
=25°C T
J
=125°C
0
200
400
600
800
1000
1200
01234
V
CE
(V)
I
C
(A)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=19V
V
GE
=9V
0
200
400
600
800
1000
1200
012345
V
CE
(V)
I
C
(A)
T
J
= 125°C
Transfert Characteristics
T
J
=25°C
T
J
=125°C
0
200
400
600
800
1000
1200
567891011
V
GE
(V)
I
C
(A)
Energy losses vs Collector Current
Eon
Eoff
Er Er
0
100
200
300
400
500
0 200 400 600 800 1000
I
C
(A)
E (mJ)
V
CE
= 900V
V
GE
= 15V
R
G
= 2.4 Ω
T
J
= 125°C
Eon
Eoff
Er
0
200
400
600
800
1000
0 5 10 15 20 25 30
Gate Resistance (ohms)
E (mJ)
V
CE
= 900V
V
GE
=15V
I
C
= 600A
T
J
= 125°C
Switch i n g En er gy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
200
400
600
800
1000
1200
1400
0 400 800 1200 1600
V
CE
(V)
I
C
(A)
V
GE
=15V
T
J
=125°C
R
G
=2.4 Ω
maximum Effective Transient Thermal Im p edan ce, Jun ction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Second s)
Thermal Impedance (°C/W)
IGBT
APTGT600U170D4G
APTGT600U170D4G – Rev 2 July, 2008
www.microsemi.com 5-5
Forward Characteristic of d i ode
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
200
400
600
800
1000
1200
0 0.5 1 1.5 2 2.5 3
V
F
(V)
I
F
(A)
hard
switching
ZCS
ZVS
0
5
10
15
20
25
30
0 200 400 600 800
I
C
(A)
Fmax, Operatin g Frequency (kHz)
V
CE
=900V
D=50%
R
G
=2.4 Ω
T
J
=125°C
T
C
=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal I mpedance (°C/W)
Diode
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
