BAT14-03W Silicon Schottky Diode 2 DBS mixer applications up to 12 GHz 1 Low noise figure Low barrier type VPS05176 2 1 EHA07007 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAT14-03W O/white 1=C SOD323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 4 Forward current IF 90 mA Total power dissipation, TS 85 C Ptot 100 mW Junction temperature Tj 150 C Operating temperature range Top -55 ... 125 C Storage temperature Tstg -55 ... 150 C Value Unit V Thermal Resistance Junction - soldering point1) RthJS 690 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-06-2001 BAT14-03W Electrical Characteristics at TA = 25 C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. 4 - - IF = 1 mA 0.36 0.43 0.52 IF = 10 mA 0.48 0.55 0.66 CT - 0.22 0.35 pF RF - 5.5 - DC characteristics (per diode) Breakdown voltage V(BR) V I(BR) = 5 A Forward voltage VF AC characteristics (per diode) Diode capacitance VR = 0 V, f = 1 MHz Forward resistance IF = 10mA / 50mA 2 Jul-06-2001 BAT14-03W Forward current IF = f (VF ) Reverse current IR = f (VR) TA = parameter T A = Parameter 10 2 10 1 mA mA 10 0 IF IR 10 1 10 0 TA=125C TA=85C 10 -1 -40C 25C 85C 125C TA=25C 10 -1 10 -2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 -2 V 10 -3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1.0 VF V 5.0 VR Diode capacitance CT = f (VR) f = 1MHz 0.50 pF 0.40 CT 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VR 3 Jul-06-2001