BAT14-03W
Jul-06-20011
Silicon Schottky Diode
DBS mixer applications up to 12 GHz
Low noise figure
Low barrier type
VPS05176
12
21
EHA07007
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BAT14-03W O/white 1 = C 2 = A SOD323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR4 V
Forward current IF90 mA
Total power dissipation, TS
85 °C Ptot 100 mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 125 °C
Storage temperature Tst
g
-55 ... 150 °C
Thermal Resistance
Junction - soldering point1) RthJS
690 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BAT14-03W
Jul-06-20012
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics (per diode)
Breakdown voltage
I(BR) = 5 µA V(BR) 4 - - V
Forward voltage
IF = 1 mA
IF = 10 mA
VF
0.36
0.48
0.43
0.55
0.52
0.66
AC characteristics (per diode)
Diode capacitance
VR = 0 V, f = 1 MHz CT- 0.22 0.35 pF
Forward resistance
IF = 10mA / 50mA RF- 5.5 -
BAT14-03W
Jul-06-20013
Forward current IF = f (VF)
TA = parameter
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V1.0
VF
-2
10
-1
10
0
10
1
10
2
10
mA
I
F
-40°C
25°C
85°C
125°C
Reverse current IR = f (VR)
TA = Parameter
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
VR
-3
10
-2
10
-1
10
0
10
1
10
mA
I
R
TA=125°C
TA=85°C
TA=25°C
Diode capacitance CT = f (VR)
f = 1MHz
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
VR
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
pF
0.50
C
T
