2N5089G - ON SEMICONDUCTOR - Datasheet.Directory

March, 2007 − Rev. 4 1Publication Order Number:

2N5088/D

2N5088, 2N5089

Amplifier Transistors

NPN Silicon

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage 2N5088

2N5089

VCEO 30

Vdc

Collector − Base Voltage 2N5088

2N5089

VCBO 35

Vdc

Emitter − Base Voltage VEBO 3.0 Vdc

Collector Current − Continuous IC50 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°CPD625

5.0 mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD1.5

12 W

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

(Note 1) RqJA 200 °C/W

Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. RqJA is measured with the device soldered into a typical printed circuit board.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

x = 8 or 9

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

MARKING DIAGRAM

3 COLLECTOR

BASE

1 EMITTER

Device Package Shipping†

2N5089G

2N2089RLRE

ORDERING INFORMATION

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

TO−92 2000/Tape & Reel

TO−92

(Pb−Free) 5000 Units/Bulk

508x

AYWW G

(Note: Microdot may be in either location)

2N5088G TO−92

(Pb−Free) 5000 Units/Bulk

2N2088RLRAG TO−92

(Pb−Free) 2000/Tape & Reel

12312

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

TO−92

CASE 29

STYLE 1

2N5088, 2N5089

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 2)

(IC = 1.0 mAdc, IB = 0) 2N5088

2N5089

V(BR)CEO 30

25 −

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0) 2N5088

2N5089

V(BR)CBO 35

30 −

−

Vdc

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0) 2N5088

(VCB = 15 Vdc, IE = 0) 2N5089

ICBO −

−50

nAdc

Emitter Cutoff Current

(VEB(off) = 3.0 Vdc, IC = 0)

(VEB(off) = 4.5 Vdc, IC = 0)

IEBO −

−50

100

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5.0 Vdc) 2N5088

2N5089

(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5088

2N5089

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2) 2N5088

2N5089

hFE 300

400

350

450

300

400

900

1200

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) − 0.5 Vdc

Base−Emitter On Voltage

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2) VBE(on) − 0.8 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz) fT50 − MHz

Collector−Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb − 4.0 pF

Emitter−Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 10 pF

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N5088

2N5089

hfe 350

450 1400

1800

−

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) 2N5088

2N5089

NF −

−3.0

2.0

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

RSin

enIDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

2N5088, 2N5089

http://onsemi.com

Figure 2. Effects of Frequency

f, FREQUENCY (Hz)

7.0

5.0

Figure 3. Effects of Collector Current

IC, COLLECTOR CURRENT (mA)

Figure 4. Noise Current

f, FREQUENCY (Hz)

Figure 5. Wideband Noise Figure

RS, SOURCE RESISTANCE (OHMS)

3.0

NOISE CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C)

NOISE VOLTAGE

en, NOISE VOLTAGE (nV)

In, NOISE CURRENT (pA)

NF, NOISE FIGURE (dB)

20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz

BANDWIDTH = 1.0 Hz

IC = 10 mA

300 mA

30 mA

RS ≈ 0

3.0 mA

1.0 mA 7.0

5.0

3.0

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10

RS ≈ 0

f = 10 Hz

100 Hz

1.0 kHz

10 kHz

100 kHz

IC = 10 mA

3.0 mA

1.0 mA

300 mA

100 mA

10 mA

RS ≈ 0

10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

0.1

0.2

0.3

1.0

0.7

2.0

3.0

5.0

7.0

10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

4.0

8.0

BANDWIDTH = 10 Hz to 15.7 kHz

IC = 1.0 mA

500 mA

100 mA

10 mA

100 Hz NOISE DATA

300

200

100

3.0

5.0

7.0

RS, SOURCE RESISTANCE (OHMS)

10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

VT, TOTAL NOISE VOLTAGE (nV)

NF, NOISE FIGURE (dB)

4.0

8.0

Figure 6. Total Noise Voltage

BANDWIDTH = 1.0 Hz IC = 10 mA

3.0 mA

1.0 mA

300 mA

100 mA

30 mA

10 mA

10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

IC = 10 mA

300 mA

100 mA

30 mA

3.0 mA

1.0 mA

10 mA

BANDWIDTH = 1.0 Hz

RS, SOURCE RESISTANCE (OHMS)

Figure 7. Noise Figure

0.5

2N5088, 2N5089

http://onsemi.com

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.4

1.0

2.0

3.0

4.0

0.3

0.01

h , DC CURRENT GAIN (NORMALIZED)

0.05 2.0 3.0 100.02 0.03

0.2

1.00.1 5.0

VCE = 5.0 V

TA = 125°C

25°C

−55 °C

0.7

0.5

0.50.2 0.3

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

Figure 9. “On” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

Figure 10. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

0.01

−0.8

−1.2

−1.6

−2.4

TJ = 25°C

VCE(sat) @ IC/IB = 10

VBE @ VCE = 5.0 V

TJ = 25°C to 125°C

−55 °C to 25°C

RVBE, BASE−EMITTER

TEMPERATURE COEFFICIENT (mV/ C)°

−0.4

−2.0

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

fT, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

C, CAPACITANCE (pF)

8.0

0.8

1.0

2.0

3.0

4.0

6.0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

TJ = 25°C

Ccb

Cob Ceb Cib

1.0 2.0 5.03.0 7.0 10 20 30 50 70 100

500

300

200

100

VCE = 5.0 V

TJ = 25°C

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. Current−Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

2N5088, 2N5089

http://onsemi.com

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AM

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND

DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P

AND BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX

MILLIMETERS

A4.45 5.20

B4.32 5.33

C3.18 4.19

D0.40 0.54

G2.40 2.80

J0.39 0.50

K12.70 −−−

N2.04 2.66

P1.50 4.00

R2.93 −−−

V3.43 −−−

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

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2N5088/D

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