Document Number: 83673 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.9, 10-Dec-08 651
Optocoupler, Phototransistor Output,
Low Input Current
SFH618A, SFH6186
Vishay Semiconductors
DESCRIPTION
The SFH618A (DIP) and SFH6186 (SMD) feature a high
current transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infrared diode
emitter, which is optically coupled to silicon planar
phototransistor detector, and is incorporated in a plastic
DIP-4 or SMD package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.The couplers are
end-stackable with 2.54 mm lead spacing. Creepage and
clearance distances of > 8.0 mm achieved with option 6. This
version complies with IEC 60950 (DIN VDE 0805) for
reinforced insulation to an operation voltage of 400 VRMS or
DC.
FEATURES
• Good CTR linearity depending on forward
current
• Low CTR degradation
• High collector emitter voltage, VCEO = 55 V
• Isolation test voltage, 5300 VRMS
• Low coupling capacitance
• End stackable, 0.100" (2.54 mm) spacing
• High common mode transient immunity
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
APPLICATIONS
• Telecom
• Industrial controls
• Battery powered equipment
• Office machines
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• CSA 93751
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• BSI IEC 60950; IEC 60065
•FIMKO
Note
For additional information on the available options refer to option information.
1
1
i179061
E
C
A
C
1
2
4
3
ORDER INFORMATION
PART REMARKS
SFH618A-2 CTR 63 % to 125 %, DIP-4
SFH618A-3 CTR 100 % to 200 %, DIP-4
SFH618A-4 CTR 160 % to 320 %, DIP-4
SFH618A-5 CTR 250 % to 500 %, DIP-4
SFH6186-2 CTR 63 % to 125 %, SMD-4
SFH6186-3 CTR 100 % to 200 %, SMD-4
SFH6186-4 CTR 160 % to 320 %, SMD-4
SFH6186-5 CTR 250 % to 500 %, SMD-4
SFH618A-3X006 CTR 100 % to 200 %, DIP-4 400 mil (option 6)
SFH618A-3X007 CTR 100 % to 200 %, SMD-4 (option 7)
SFH618A-4X006 CTR 160 % to 320 %, DIP-4 400 mil (option 6)
SFH618A-5X006 CTR 250 % to 500 %, DIP-4 400 mil (option 6)
SFH618A-5X007 CTR 250 % to 500 %, SMD-4 (option 7)
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83673
652 Rev. 1.9, 10-Dec-08
SFH618A, SFH6186
Vishay Semiconductors Optocoupler, Phototransistor Output,
Low Input Current
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
Power dissipation Pdiss mW
Forward current IF60 mA
OUTPUT
Collector emitter voltage VCE 55 V
Emitter collector voltage VEC 7V
Collector current IC50 mA
tp ≤ 1.0 ms IC100 mA
Power dissipation Pdiss 150 mW
COUPLER
Isolation test voltage
between emitter and detector VISO 5300 VRMS
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω
Storage temperature range Tstg - 55 to + 150 °C
Ambient temperature range Tamb - 55 to + 100 °C
Junction temperature Tj100 °C
Soldering temperature (2) max. 10 s, dip soldering distance
to seating plane ≥ 1.5 mm Tsld 260 °C
0
50
100
150
200
020406080 100 120
19386
P - Power Dissipation (mW)
tot
Detector
LED
Tamb - Ambient Temperature (°C)
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 5 mA VF1.1 1.5 V
Reverse current VR = 6 V IR0.01 10 µA
Capacitance VR = 0 V, f = 1 MHz CO25 pF
Thermal resistance Rthja 1070 K/W
Document Number: 83673 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.9, 10-Dec-08 653
SFH618A, SFH6186
Optocoupler, Phototransistor Output,
Low Input Current Vishay Semiconductors
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Collector emitter leakage current VCE = 10 V ICEO 10 200 nA
Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 7pF
Thermal resistance Rthja 500 K/W
COUPLER
Collector emitter saturation voltage
IC = 0.32 mA, IF = 1 mA SFH618A-2 VCEsat 0.25 0.4 V
SFH6186-2 VCEsat 0.25 0.4 V
IC = 0.5 mA, IF = 1 mA SFH618A-3 VCEsat 0.25 0.4 V
SFH6186-3 VCEsat 0.25 0.4 V
IC = 0.8 mA, IF = 1 mA SFH618A-4 VCEsat 0.25 0.4 V
SFH6186-4 VCEsat 0.25 0.4 V
IC = 1.25 mA, IF = 1 mA SFH618A-5 VCEsat 0.25 0.4 V
SFH6186-5 VCEsat 0.25 0.4 V
Coupling capacitance CC0.25 pF
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IF
IF = 1 mA, VCE = 0.5 V SFH618A-2 CTR 63 125 %
SFH6186-2 CTR 63 125 %
IF = 0.5 mA, VCE = 1.5 V SFH618A-2 CTR 32 75 %
SFH6186-2 CTR 32 75 %
IF = 1 mA, VCE = 0.5 V SFH618A-3 CTR 100 200 %
SFH6186-3 CTR 100 200 %
IF = 0.5 mA, VCE = 1.5 V SFH618A-3 CTR 50 120 %
SFH6186-3 CTR 50 120 %
IF = 1 mA, VCE = 0.5 V SFH618A-4 CTR 160 320 %
SFH6186-4 CTR 160 320 %
IF = 0.5 mA, VCE = 1.5 V SFH618A-4 CTR 80 200 %
SFH6186-4 CTR 80 200 %
IF = 1 mA, VCE = 0.5 V SFH618A-5 CTR 250 500 %
SFH6186-5 CTR 250 500 %
IF = 0.5 mA, VCE = 1.5 V SFH618A-5 CTR 125 300 %
SFH6186-5 CTR 125 300 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn on time VCC = 5 V, IC = 2 mA, RL = 100 Ωton 6µs
Rise time VCC = 5 V, IC = 2 mA, RL = 100 Ωtr3.5 µs
Turn off time VCC = 5 V, IC = 2 mA, RL = 100 Ωtoff 5.5 µs
Fall time VCC = 5 V, IC = 2 mA, RL = 100 Ωtf5µs
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83673
654 Rev. 1.9, 10-Dec-08
SFH618A, SFH6186
Vishay Semiconductors Optocoupler, Phototransistor Output,
Low Input Current
Fig. 2 - Test Circuit Fig. 3 - Test Circuit and Waveforms
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 4 - Current Transfer Ratio (typ.) Fig. 5 - Current Transfer Ratio (typ.)
isfh618a_10
Input
VOUT
VCC = 5 V
RL
isfh618a_12
10 %
90 %
Inputpulse
Outputpulse
tr
ton
tf
toff
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification
(according to IEC 68 part 1) 55/100/21
Comparative tracking index CTI 175 399
VIOTM 10000 V
VIORM 890 V
PSO 400 mW
ISI 275 mA
TSI 175 °C
Creepage distance standard DIP-4 7 mm
Clearance distance standard DIP-4 7 mm
Creepage distance 400 mil DIP-4 8 mm
Clearance distance 400 mil DIP-4 8 mm
Insulation thickness,
reinforced rated per IEC 60950 2.10.5.1 0.4 mm
240
280
%
200
160
- 40 - 20 0 20 40 60 ºC
100
isfh618a_01
T
A
120
80
40
0
CTR
IF = 5mA
IF = 1mA
IF = 2mA
IF = 0.5mA
VCE = 0.5 V, CTR = f (TA)
240
280
%
200
160
- 40 - 20 0 20 40 60 ºC
100
isfh618a_02
TA
120
80
40
0
CTR
IF = 5mA
IF = 1mA
IF = 2mA
IF = 0.5mA
Document Number: 83673 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.9, 10-Dec-08 655
SFH618A, SFH6186
Optocoupler, Phototransistor Output,
Low Input Current Vishay Semiconductors
Fig. 6 - Diode Forward Voltage (typ.)
Fig. 7 - Diode Forward Voltage (typ.)
Fig. 8 - Transistor Capacitance
Fig. 9 - Output Characteristics
Fig. 10 - Switching Times (typ.)
1.15
1.2
V
1.1
1.05
mA
isfh618a_03
IF
1
0.95
0.9
Vr
TA = 25 ºC, VF = f (IF)
10-1 100101
1.15
1.2
V
1.1
- 40 - 20 0 20 40 60 ºC
100
isfh618a_04
T
A
1.05
1
0.95
0
VF
IF = 1.0 mA, VF = f (TA)
16
20
pF
12
V
isfh618a_05
V
CE
8
4
0
C
CE
TA = 25 ºC, f = 1.0 MHz
CEE = f (VCE)
10-1 100101102
10-2
10
12
mA
8
V
isfh618a_06
V
CE
6
4
2
0
I
CE
TA = 25 ºC,
CE = f
(VCE, IF)
10
-1
10
0
10
1
10
2
10
-2
IF = 5 mA
IF = 2 mA
IF = 1 mA
IF = 0.5 mA
OHOO2119
103
102
101
100
Ω
isfh618a_09
RL
t
103104105
102
μ5
tF
t off
tR
t on
TA = 25 ºC, IF = 1.0 mA,
VCC = 5.0 V, tON, tR,
tOFF, tF, = f (RL)
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83673
656 Rev. 1.9, 10-Dec-08
SFH618A, SFH6186
Vishay Semiconductors Optocoupler, Phototransistor Output,
Low Input Current
PACKAGE DIMENSIONS in inches (millimeters)
i178027
0.255 (6.48)
0.268 (6.81)
1
2
4
3
0.179 (4.55)
0.190 (4.83)
Pin one ID
0.030 (0.76)
0.045 (1.14)
4°
typ.
0.100 (2.54)
0.130 (3.30)
0.150 (3.81)
0.020 (0.508)
0.035 (0.89)
10°
3° to 9°
0.018 (0.46)
0.022 (0.56)
0.008 (0.20)
0.012 (0.30)
0.031 (0.79) typ.
0.050 (1.27) typ.
0.300 (7.62) typ.
0.110 (2.79)
0.130 (3.30)
0.230 (5.84)
0.250 (6.35)
0.050 (1.27)
ISO method A
i178029
0.255 (6.48)
0.268(6.81)
3 4
0.179 (4.55)
0.190 (4.83)
Pin one ID
0.030 (0.76)
0.045 (1.14)
4° typ.
1.00 (2.54) typ.
0.130 (3.30)
0.150 (3.81)
0.0098(0.249)
0.035 (0.102)
0.020 (0.508)
0.040 (1.02)
0.031 (0.79)
typ.
0.050 (1.27)
typ.
0.010 (0.25)
typ.
10 °
3° to 7°
0.375 (9.52)
0.395 (10.03)
0.296 (7.52)
0.312 (7.90)
0.315 (8.00)
min.
Lead
coplanarity
0.004 max.
SMD
ISO method A
0.100 (2.54) R 0.010 (0.25)
0.070 (1.78)
0.030 (0.76)
0.315 (8.00) min. 0.060 (1.52)
0.435 (11.05)
0.407 (10.36)
0.391 (9.96)
Optio n6
min.
0.300 (7.62)
typ.
min.
max.
0.028 (0.7)
Option 7
18450-1
0.307 (7.8)
0.291 (7.4)
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
0.180 (4.6)
0.160 (4.1)
0.315 (8.0)
0.331 (8.4)
0.406 (10.3)
Document Number: 83673 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.9, 10-Dec-08 657
SFH618A, SFH6186
Optocoupler, Phototransistor Output,
Low Input Current Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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