2N1483 - 2N1486 Qualified Levels: JAN and JANTX NPN Silicon Medium Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/180 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES TO-8 Package * JEDEC registered 2N1483 through 2N1486 series. * JAN and JANTX qualifications are available per MIL-PRF-19500/180. * RoHS compliant versions available (commercial grade only). APPLICATIONS / BENEFITS * * General purpose transistors for medium power applications requiring high frequency switching and low package profile. Military and other high-reliability applications. MAXIMUM RATINGS Symbol 2N1483 2N1485 2N1484 2N1486 Unit Collector-Emitter Voltage V CEO 40 55 V Collector-Base Voltage V CBO 60 100 V Emitter-Base Voltage V EBO 12 V IC 3.0 A PT 1.75 25 W T J , T stg -65 to +200 C Parameters / Test Conditions Collector Current Total Power Dissipation (1) @ T A = +25 C (2) @ T C = +25 C Operating & Storage Junction Temperature Range Notes: 1. Derate linearly 0.010 mW/C for T A > +25 C. 2. Derate linearly 0.143 mW/C for T C > +25 C. MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0299, Rev. 1 (7/29/13) (c)2013 Microsemi Corporation Page 1 of 4 2N1483 - 2N1486 MECHANICAL and PACKAGING * * * * CASE: Hermetically sealed, kovar base, nickel cap TERMINALS: Alloy 52 with nickel plating and hot solder dip (Sn63/Pb37) or matte-tin plating for RoHS compliance (available on commercial grade only). MARKING: Part number, date code, manufacturer's ID POLARITY: See Package Dimensions on last page. PART NOMENCLATURE JAN 2N1483 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level Blank = Commercial RoHS Compliance e3 = RoHS Compliant (available on commercial grade only) Blank = non-RoHS Compliant JEDEC type number (see Electrical Characteristics table) Symbol C obo I CEO I CEX I EBO h FE V CEO V CBO V EBO SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance. Collector cutoff current, base open. Collector cutoff current, circuit between base and emitter. Emitter cutoff current, collector open. Common-emitter static forward current transfer ratio. Collector-emitter voltage, base open. Collector-emitter voltage, emitter open. Emitter-base voltage, collector open. T4-LDS-0299, Rev. 1 (7/29/13) (c)2013 Microsemi Corporation Page 2 of 4 2N1483 - 2N1486 ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted OFF CHARACTERISTICS Parameters / Test Conditions Collector-Emitter Breakdown Current I C = 100 mA 2N1483, 2N1485 2N1484, 2N1486 Collector-Emitter Cutoff Current V BE = 1.5 V, I C = 0.25 mA 2N1483, 2N1485 2N1484, 2N1486 Collector-Base Cutoff Current V CB = 30 V 2N1483, 2N1485 V CB = 50 V 2N1484, 2N1486 Emitter-Base Cutoff Current V EB = 12.0 V ON CHARACTERISTICS Min. Max. Unit V (BR)CEO 40 55 V I CEX 60 100 A I CEO 15.0 15.0 A I EBO 15 A Unit (1) Parameters / Test Conditions Forward-Current Transfer Ratio I C = 750 mA, V CE = 4.0 V 2N1483, 2N1484 2N1485, 2N1486 Collector-Emitter Saturation Voltage I C = 750 A, I B = 75 mA 2N1483, 2N1484 I C = 750 A, I B = 40 mA 2N1485, 2N1486 Base-Emitter Voltage I C = 750 mA, V CE = 4.0 V DYNAMIC CHARACTERISTICS Parameters / Test Conditions Forward Current Transfer Ratio I C = 5.0 mA, V CB = 28 V Output Capacitance V CB = 10 V, I E = 0, 100 kHz f 1.0 MHz SWITCHING CHARACTERISTICS Parameters / Test Conditions (for all symbols) Turn-On Time Symbol V CC = 12 V, R C = 15.9 , I BO = I B2 = 35 mA, R B1 = 65 mA Symbol Min. Max. h FE 20 35 60 100 1.20 0.75 V CE(sat) V BE 2.0 Symbol Min. f htb 600 C obo Symbol t on + t off Min. Max. V V Unit kHz 400 pF Max. Unit 25 s NOTES: (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. T4-LDS-0299, Rev. 1 (7/29/13) (c)2013 Microsemi Corporation Page 3 of 4 2N1483 - 2N1486 PACKAGE DIMENSIONS Symbol CD CH HD J LD LL Q 1. 2. 3. 4. 5. Dimensions Millimeters Max Min Max 0.524 11.28 13.31 0.330 6.86 8.38 0.650 13.97 16.51 0.146 3.45 3.71 0.033 0.69 0.84 0.440 9.14 11.18 0.115 2.92 Inch Min 0.444 0.270 0.550 0.136 0.027 0.360 - Note 3, 5 5 Dimensions are in inches. Millimeters are given for general information only. Measured in the zone beyond 0.050 (1.27 mm) from seating plane. The collector shall be internally connected to the case. All three leads. T4-LDS-0299, Rev. 1 (7/29/13) (c)2013 Microsemi Corporation Page 4 of 4