T4-LDS-0299, Rev. 1 (7/29/13) ©2013 Microsemi Corporation Page 1 of 4
2N1483 – 2N1486
Availa ble on
commercial
versions
NPN Silicon Medium Power Transistor
Qualified per MIL-PRF-19500/180
Qualified Levels:
JAN and JANTX
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
TO-8 Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N1483 through 2N1486 series.
• JAN and JANTX qualifications are available per MIL-PRF-19500/180.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• General purpo se tr an si stors for medium pow er applic ati ons r equiring high frequency switching and
low package profile.
• Military and other high-rel iability a pplica tions.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol
2N1483
2N1485
2N1484
2N1486
Unit
Collector-Emitter Voltage VCEO 40 55 V
Collector-Base Voltage VCBO 60 100 V
Emitter-Base Voltage VEBO 12 V
Collector Current
I
C
3.0
A
Total Power Dissipation
@ TA = +25 °C
(1)
@ TC = +25 °C (2) PT 1.75
25 W
Operating & Storage Junction Temperature Range
T
J
, T
stg
-65 to +200
°C
Notes: 1. Derate linearly 0.010 mW/°C for TA > +25 °C.
2. Derate linearly 0.143 mW/°C for TC > +25 °C.
T4-LDS-0299, Rev. 1 (7/29/13) ©2013 Microsemi Corporation Page 2 of 4
2N1483 – 2N1486
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap
• TERMINALS: Alloy 52 with nickel plating and hot solder dip (Sn63/Pb37) or matte-tin plating for RoHS compliance (available on
commercial grade only).
• MARKING: Part number, date code, manufacturer’s ID
• POLARITY: See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N1483 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-base open-circuit output capacitance.
ICEO
Collector cutoff current, base open.
ICEX
Collector cut of f curr ent, circuit bet ween bas e and emitter.
IEBO
Emitter cutoff current, collector open.
hFE
Common-emitter static forward current transfer ratio.
VCEO
Collector-emitter voltage, base open.
VCBO
Collector-emitter voltage, emitter open.
VEBO
Emitter-base voltage, collector open.
T4-LDS-0299, Rev. 1 (7/29/13) ©2013 Microsemi Corporation Page 3 of 4
2N1483 – 2N1486
ELECTRICA L CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
OFF CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Collector-Emitter Breakdown Current
V(BR)CEO
V
I
C
= 100 mA
2N1483, 2N1485
2N1484, 2N1486
40
55
Collector-Emitter Cutoff Current
ICEX
60
100
µA
V
BE
= 1.5 V, I
C
= 0.25 mA
2N1483, 2N1485
2N1484, 2N1486
Collector-Base Cutoff Current
VCB = 30 V
VCB = 50 V
2N1483, 2N1485
2N1484, 2N1486
ICEO
15.0
15.0
µA
Emitter-Base Cutoff Current
VEB = 12.0 V
IEBO 15 µA
ON CHA RACTERISTICS (1)
Parameters / Test Conditions Symbol Min. Max. Unit
Forward-Current Transfer Ratio
hFE
I
C
= 750 mA, V
CE
= 4.0 V
2N1483, 2N1484
2N1485, 2N1486
20
35
60
100
Collector-Emitter Saturation Voltage
VCE(sat)
V
I
C
= 750 A, I
B
= 75 mA
I
C
= 750 A, I
B
= 40 mA
2N1483, 2N1484
2N1485, 2N1486
1.20
0.75
Base-Emitter Voltage
IC = 750 mA, VCE = 4.0 V
VBE
2.0
V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Current Transfer Ratio
fhtb 600 kHz
IC = 5.0 mA, VCB = 28 V
Output Capac ita nc e
Cobo 400 pF
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions (for al l symbols) Symbol Min. Max. Unit
Turn-On Time
V
CC
= 12 V, R
C
= 15.9 Ω,
IBO = IB2 = 35 mA, RB1 = 65 mA
ton+ toff 25 µs
NOTES: (1) Pulse Test: Pulse W idth = 300 µs, Dut y Cycl e ≤ 2.0%.
T4-LDS-0299, Rev. 1 (7/29/13) ©2013 Microsemi Corporation Page 4 of 4
2N1483 – 2N1486
PACKAGE DIMENSIONS
1. Dimens i ons are in inches.
2. Millim et ers are gi ven for general informat i on only.
3. Measured in the zone beyond 0.050 (1.27 mm) from seati ng plane.
4. The collector shall be internally connected to the case.
5. All three leads.
Dimensions
Symbol
Inch
Millimeters
Note
Min
Max
Min
Max
CD
0.444
0.524
11.28
13.31
CH
0.270
0.330
6.86
8.38
HD
0.550
0.650
13.97
16.51
J
0.136
0.146
3.45
3.71
LD
0.027
0.033
0.69
0.84
3, 5
LL
0.360
0.440
9.14
11.18
5
Q
-
0.115
-
2.92
