DESCRIPTION The MGFC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers . package guarantees high reliability. FEATURES @Class A operation @ internally matched to 50Q system @ High output power Prag = AW(TYP) @6.4~7.2GHz @ High power gain Gi = SdB(TYP) @6.4~7.2GHz @ High power added efficiency add = 30%(TYP) @6.4~7.2GHz @ Hermetically sealed metal-ceramic package @ Low distortion [item : 51) IM3 = ~ 45dBe(TYP) @ Po = 25(dBm) S.C.L. APPLICATION Item-01 : 6.4~7.2GHz band power amplifier Item-51 : Digital radio communication QUALITY GRADE eIG ABSOLUTE MAXIMUM RATINGS (Ta = 25C) The hermetically sealed metal - cerarnic MITSUBISHI SEMICONDUCTOR (GaAs FET) MGFC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET (0.445) "(0.102 # 0.008) OUTLINE DRAWING Unit : millimeters (inches) 21.0 + 0.3(0.827 + 0.012) = | @ z 3 | 0.6 +0.15 =\2 0.024+0.006) als \ ~ N 8 @ ~ alS = aly R16 al t] (R-0.063) IS 2 5 7 zIz $|z A 2 3 10.70.421) |) 17.0 + 0.2 = (0.669 + 6.008) af ss] 8 H+ | J ort at ; 3 = 12.0(0.472) ny 8 @GATE oN @SOURCE (FLANGE) GF-8 @DRAIN RECOMMENDED BIAS CONDITIONS @ Vos = 10V @ip = 1.2A @ Ro = 100(Q) @ Refer to Bias Procedure Symbol Parameter Ratings Unit Veoo Gate to drain voltage - 15 Vv Vaso Gate to source voltage ~15 Vv lo Drain current 3.75 A Isr Reverse gate current -10 mA Ior Forward gate current 21 mA Pr Total power dissipation *1 25 Ww Ten Channel temperature 175 c Tstg Storage temperature - 65~+ 175 c *1:Tc = 25 ELECTRICAL CHARACTERISTICS (Ta = 25) Symboi Parameter Test conditions Limits Unit Min Typ Max loss Saturated drain current Vos = 3V, Ves = OV - > 3.75 A gm Transconductance Vos = 3V, lp = 1.1A - 1 - S Vestott) | Gate to source cutoff voltage Vos = 3V, Ip = 10mA - - -45 Vv Prap Output power at 1dB gain compression 35 36 ~ dBm GP Linear power gain 8 9 = dB Ip Drain current Vos = 10V, lo = 1.2A, f = 6.4~7.2GHz - - 1.8 A Nadd Power added efficiency ~ 30 - % IM3 3rd order IM distortion * 1] ~42 | - 45 - dBc Rtnich-e) | Thermal resistance * 2| AVt method - 5 6 | C/W * 1: Item-51, 2-tone test Po = 25dBm Single Carrier Level f = 7.2GHz Af = 10MHz 2: Channel to case MITSUBISHI ELECTRIC 5-13MITSUBISHI SEMICONDUCTOR (GaAs FET) MGFC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS Pia, Gip vs.f Po, add vs. Pin ~ t x Vos = 1 3 Vos = 10V Gr= 10987 68 ~ E zg|los= 12a 2 gg[los= 1.24 3 8 0, a f=6.8GHz | Po = 37 OS 3 & z g 3 7 = 40 9 or $ & S| /| 3 a) = 25 y 30 = . o S 2 wi a . S _ 20 jadd| 2 9 > QT 8 a a p a 5 i Qa 15 Z 10 ~ 3 Z _ & 64 65 66 6.768 69 7.0 7.1 7.2 10 15. 20 a5 30 9 2 FREQUENCY f (GHz) INPUT POWER Pin (dBm) Po, iM3 vs. Pin 32 z a Po = 3 $3 ~ 28 103 E Om = SB 26 -20 == wi S ~ 24 -30 5 FE w Vos = 1 xo & 22 ios=12A 1 Bb > # = 7.2GHz 58 & 20 Af= 10MHz{ 750 5 a 2 - 5 18 tone test ~60 on Bo 13 18 17 19 21 23 25 27 INPUT POWER Pin (dBm) S.C. L. S PARAMETERS (Ta = 25C, Vos = 10V, Ips = 1.2A) S parameters (Gh $y S21 Si2 S22 Magn. Angle(deg.) Maan. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) 6.4 0.50 178 2.68 ~61 0.078 ~110 0.15 48 6.5 0.43 162 2.76 ~75 0.084 124 0.18 32 66 0.36 143 2.83 -90 0.088 ~138 0.21 15 6.7 0.30 122 2.88 -104 0.080 ~152 0.24 -1 6.8 0.25 99 2.93 -119 0.082 -165 0.27 -17 6.9 0.21 17 2.92 -133 0.095 ~179 0.29 -31 7.0 0.18 53 2.87 ~148 0.098 167 0.30 -47 Td 0.15 31 2.80 ~162 0.101 153 0.31 ~62 7.2 0.12 | 2.71 -177 0.102 137 0.32 -79 oe ES 5-14 ELECTRIC