RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs * 15A, 50V Formerly developmental type TA09833. * rDS(ON) = 0.150 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol Ordering Information PACKAGE 2387.5 Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. PART NUMBER File Number D BRAND RFD15P05 TO-251AA D15P05 RFD15P05SM TO-252AA D15P05 RFP15P05 TO-220AB RFP15P05 G S NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD15P05SM9A. Packaging JEDEC TO-220AB JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE 4-96 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE(R) is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFD15P05, RFD15P05SM, RFP15P05 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain Gate Voltage (RG = 20K) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg RFD15P05, RFD15P05SM, RFP15P05 -50 -50 20 -15 Refer to Peak Current Curve Refer to UIS Curve 80 0.533 -55 to 175 UNITS V V V A W W/oC oC oC oC 300 260 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage PARAMETER SYMBOL BVDSS ID = 250A, VGS = 0V (Figure 11) -50 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250A Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance IDSS IGSS rDS(ON) Turn-On Time tON Turn-On Delay Time tD(ON) -4.0 V - -1 A VDS = 0.8 x Rated BVDSS, TC = 150oC - - 25 A VGS = 20V - - 100 nA ID = 15A, VGS = -10V (Figure 9) - - 0.150 VDD = -25V, ID 7.5A, RG = 12.5, RL = 3.3, VGS = -10V (Figures 16, 17) - - 60 ns - 16 - ns - 30 - ns tD(OFF) - 50 - ns tF - 20 - ns Fall Time Turn-Off Time - - tR Rise Time Turn-Off Delay Time -2.0 VDS = Rated BVDSS tOFF Total Gate Charge QG(TOT) VGS = 0V to -20V Gate Charge at -10V QG(-10) VGS = 0V to -10V Threshold Gate Charge QG(TH) VGS = 0V to -2V Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDD = -40V, ID = 15A, RL = 2.67, IG(REF) = -0.65mA (Figures 18, 19) VDS = -25V, VGS = 0V f = 1MHz (Figure 12) - - 100 ns - - 150 nC - - 75 nC - - 3.5 nC - 1150 - pF - 300 - pF - 56 - pF Thermal Resistance Junction to Case RJC TO-220AB, TO-251AA, TO-252AA - - 1.875 oC/W Thermal Resistance Junction to Ambient RJA TO-251AA, TO-252AA - - 100 oC/W TO-220AB - - 62.5 oC/W MIN TYP MAX UNITS Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS Source to Drain Diode Voltage VSD ISD = -15A - - -1.5 V Reverse Recovery Time tRR ISD = -15A, dISD/dt = -100A/s - - 125 ns NOTES: 2. Pulse test: pulse duration 300ms, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4-97 RFD15P05, RFD15P05SM, RFP15P05 Typical Performance Curves -16 POWER DISSIPATION MULTIPLIER 1.2 ID , DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 -12 -8 -4 0.2 0 0 25 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 25 175 150 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 THERMAL IMPEDANCE ZJC, NORMALIZED TRANSIENT 2 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE TC = 25oC TJ = MAX RATED 100s -10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10ms 100ms DC -1 -1 -10 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 4-98 -100 -200 IDM , PEAK CURRENT CAPABILITY (A) ID , DRAIN CURRENT (A) -100 VGS = -20V -100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: 175 - T C I = I 25 ---------------------- 150 VGS = -10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION -10 10-5 10-4 10-3 10-2 10-1 100 t, PULSE WIDTH (s) FIGURE 5. PEAK CURRENT CAPABILITY 101 RFD15P05, RFD15P05SM, RFP15P05 Typical Performance Curves (Continued) -40 -50 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC STARTING TJ = 25oC ID , DRAIN CURRENT (A) IAS , AVALANCHE CURRENT (A) STARTING TJ = 150oC -10 If R = 0 tAV = (L) (IAS) / (1.3RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] -1 0.1 1 10 tAV, TIME IN AVALANCHE (ms) VGS = -20V VGS = -7V -20 VGS = -6V -10 VGS = -4.5V 0 -3.0 -4.5 -6.0 -7.5 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 7. SATURATION CHARACTERISTICS 2.5 VDD = -15V PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX -32 25oC -55oC -24 175oC -16 -8 0 -2 -4 -6 -8 NORMALIZED DRAIN TO SOURCE ON RESISTANCE IDS(ON) , DRAIN TO SOURCE CURRENT (A) -1.5 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -10V, ID = -15A 2.0 1.5 1.0 0.5 0 -80 -10 -40 FIGURE 8. TRANSFER CHARACTERISTICS 40 80 120 160 200 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2.0 2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = -250A 1.5 1.0 0.5 0 -80 0 TJ , JUNCTION TEMPERATURE (oC) VGS , GATE TO SOURCE VOLTAGE (V) NORMALIZED GATE VGS = -5V 0 100 -40 THRESHOLD VOLTAGE VGS = -8V -30 FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY 0 VGS = -10V -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 4-99 ID = -250A 1.5 1.0 0.5 0 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE RFD15P05, RFD15P05SM, RFP15P05 Typical Performance Curves (Continued) C, CAPACITANCE (pF) VDD = BVDSS VDD = BVDSS -7.5 -37.5 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS 800 600 COSS 400 RL = 3.33 IG(REF) = -0.65mA VGS = -10V -25 0.25 BVDSS 0.25 BVDSS -12.5 200 CRSS -5.0 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS -2.5 0.0 0 0 0 -5 -10 -15 -20 -25 20 VDS , DRAIN TO SOURCE VOLTAGE (V) IG(REF) t, TIME (ms) IG(ACT) 80 IG(REF) IG(ACT) NOTE: Refer to Intersil Application Notes AN7254 and AN7260 FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS tAV L 0 VARY tP TO OBTAIN REQUIRED PEAK IAS - RG + 0V VGS VDD DUT VDD tP IAS IAS VDS tP 0.01 BVDSS FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(OFF) td(ON) tr 0 RL DUT VGS RG VDD + tf 10% 10% VDS VGS 0 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 16. SWITCHING TIME TEST CIRCUIT 4-100 FIGURE 17. RESISTIVE SWITCHING WAVEFORMS VGS , GATE TO SOURCE VOLTAGE (V) CISS 1200 -10.0 -50 VDS , DRAIN TO SOURCE VOLTAGE (V) 1400 RFD15P05, RFD15P05SM, RFP15P05 Test Circuits and Waveforms (Continued) VDS RL VDS Qg(TH) 0 VGS = -2V VGS - Qg(-10) + DUT VGS = -10V -VGS VDD VGS = -20V VDD Ig(REF) Qg(TOT) 0 Ig(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT 4-101 FIGURE 19. GATE CHARGE WAVEFORMS RFD15P05, RFD15P05SM, RFP15P05 PSPICE Electrical Model .SUBCKT RFP15P05 2 1 3 REV 9/06/94 CA 12 8 1.6e-9 CB 15 14 1.47e-9 CIN 6 8 1.09e-9 LDRAIN 5 10 2 DRAIN DPLCAP DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 6 DPLCAPMOD 5 51 ESG + RGATE 9 1 LDRAIN 2 5 1e-9 LGATE 1 9 6.73e-9 LSOURCE 3 7 6.69e-9 VTO - EBREAK 17 18 + - 16 DBODY MOS2 21 - 18 20 8 LGATE RDRAIN 6 8 EVTO + GATE ESCL + EBREAK 5 11 17 18 -73.0 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1 IT 8 17 1 RSCL1 RSCL2 RIN 11 MOS1 6 DBREAK CIN 8 RSOURCE LSOURCE 3 SOURCE MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 63.6e-3 RGATE 9 20 7.37 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 46.5e-3 RVTO 18 19 RVTOMOD 1 S1A 12 13 8 S1B 7 S2A 14 13 13 15 17 RBREAK S2B RVTO CB CA IT + 6 EGS 8 - + EDS - 14 5 8 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.65 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/35,4))} .MODEL DBDMOD D (IS = 1.27e-13 RS = 1.62e-2 TRS1 = 1.35e-3 TRS2 = -4.33e-6 CJO = 1.25e-9 TT = 7.97e-8) .MODEL DBKMOD D (RS = 2.54e-1 TRS1 = 4.54e-3 TRS2 = -1.12e-5) .MODEL DPLCAPMOD D (CJO = 285e-12 IS = 1e-30 N = 10) .MODEL MOSMOD PMOS (VTO = -3.78 KP = 6.97 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 9.15e-4 TC2 = -4.0e-7) .MODEL RDSMOD RES (TC1 = 5.47e-3 TC2 = 1.37e-5) .MODEL RSCLMOD RES (TC1 = 1.9e-3 TC2 = -7.5e-6) .MODEL RVTOMOD RES (TC1 = -3.71e-3 TC2 = -2.41e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.65 VOFF = 1.65) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.65 VOFF = 3.65) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.60 VOFF = -4.40) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.40 VOFF = 0.60) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authored by William J. Hepp and C. Frank Wheatley. 4-102 18 19 - VBAT + RFD15P05, RFD15P05SM, RFP15P05 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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