ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
DB92010-AAS/A4
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
ll VDE 0884 in 2 available lead forms : -
- STD
- G form
DESCRIPTION
The H11C_ series are optically coupled isolators
consisting of infrared light emitting diode and a
light activated silicon controlled rectifier in a
standard 6pin dual in line plastic package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lHigh Surge Anode Current (5.0 A)
lHigh Blocking Voltage (200V*1, 400V*1)
lLow Turn on Current (5mA typical)
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
l10A, T2L compatible, Solid State Relay
l25W Logic Indicator Lamp Driver
l400V Symmetrical transistor coupler
H11C1X, H11C2X, H11C3X, H11C4X, H11C5X, H11C6X
H11C1, H11C2, H11C3, H11C4, H11C5, H11C6
PHOTON COUPLED ISOLATOR Ga As
INFRARED EMITTING DIODE &
LIGHT ACTIVATED SCR
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Forward Current (Peak)
(1µs pulse, 300 pps) 3A
Reverse Voltage 6V
Power Dissipation 100mW
DETECTOR
Peak Forward Voltage
H11C1, H11C2, H11C3 200V*1
H11C4, H11C5, H11C6 400V*1
Peak Reverse Gate Voltage 6V
RMS On-state Current 300mA
Peak On-state Current
(100µs, 1% duty cycle) 10A
Surge Current (10ms) 5A
Power Dissipation 300mW
*1 IMPORTANT : A resistor must be connected
between gate and cathode (pins 4 & 6) to prevent false
firing (RGK < 56kΩ)
1
34
6
2 5
Dimensions in mm
2.54
7.0
6.0
7.62
max.
0.5
min. 3.9
3.1
5.1
max.
15°
Max
0.25
0.48
8.3 max.
OPTION G
8.3 max
SURFACE MOUNT
OPTION SM
10.16
10.2
9.5
0.26
1.2
0.6 1.4
0.9
5/12/00
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92010-AAS/A4
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.5 VIF = 10mA
Reverse Voltage (VR)3VIR = 10µA
Output Peak Off-state Voltage (VDM )
(note 2) H11C1, H11C2, H11C3 200 VRGK=10kΩ, ID= 50µA,
TA= 100°C
H11C4, H11C5, H11C6 400 VRGK=10kΩ,ID=150µA,
TA=100°C
Peak Reverse Voltage (VRM )
H11C1, H11C2, H11C3 200 VRGK=10kΩ, ID= 50µA,
TA=100°C
H11C4, H11C5, H11C6 400 VRGK=10kΩ,ID=150µA,
TA=100°C
On-state Voltage (VTM )1.1 1.3 VITM = 300mA
Off-state Current (IDM )
H11C1, H11C2, H11C3 50 µARGK=10kΩ, IF= 0,
VDM=200V, TA=100°C
H11C4, H11C5, H11C6 150 µARGK=10kΩ, IF= 0,
VDM=400V, TA=100°C
Reverse Current (IR )
H11C1, H11C2, H11C3 50 µARGK=10kΩ, IF= 0,
VDM=200V, TA=100°C
H11C4, H11C5, H11C6 150 µARGK=10kΩ, IF= 0,
VDM=400V, TA=100°C
Coupled Input Current to Trigger ( IFT ) (note 2)
H11C1, H11C2, H11C4, H11C5 20 mA VAK =50V, RGK=10kΩ
H11C3, H11C6 30 mA VAK =50V, RGK=10kΩ
H11C1, H11C2, H11C4, H11C5 11 mA VAK=100V, RGK=27kΩ
H11C3, H11C6 14 mA VAK=100V, RGK=27kΩ
Coupled dv/dt, Input to Output (dv/dt) 500 V/µs
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 1011 ΩVIO = 500V (note 1)
Input-output Capacitance Cf 2pF V = 0, f =1MHz
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
5/12/00
DB92010-AAS/A4
0 0.5 1 1.5 2 2.5 3
Forward voltage VF ( V )
Input Current to Trigger vs.
Ambient Temperature
1 2 4 6 10 20 40 60 100 200 400 1000
Pulse width ( µs )
Forward current I F (mA)
Input Characteristics IF vs. VF
Normalized input current to trigger I FT
0 10 20 30 40 50 60 70 80 90 100
Input current IF (mA)
Turn on time t on (
µ
s)
Turn on Time vs. Input Current
0.1
0.1
0.2
Anode to cathode voltage VAK ( V )
Input Current to Trigger vs.
Anode to Cathode Voltage
Normalized input current to trigger I FT
0.1
0.2
1 5 10 50 100 200
0.4
1.0
2
4
10
20
40
100 Normalized to
VAK = 50V
RGK =10kΩ
TA = 25 °C
RGK =300Ω
10kΩ
27kΩ
56kΩ
1kΩ
RGK =300Ω
10kΩ
27kΩ
56kΩ
1kΩ
Normalized to VAK = 50V,
RGK =10kΩ, TA = 25 °C
-60 -40 -20 0 20 40 60 80 100 120
Ambient temperature TA ( °C )
Normalized input current to trigger I FT
0.1
0.2
0.4
1.0
2
4
10
12
Input Current to Trigger Distribution
vs. Ambient Temperature
Ambient temperature TA ( °C )
-40 -20 0 20 40 60 80 100
Normalized to
VAK = 50V
RGK =10kΩ
TA = 25 °C
90th percentile
10th percentile
Input Current to Trigger vs.
Pulse Width
Normalized to
VAK = 50V
RGK =10kΩ
TA = 25 °C
RGK =300Ω
1kΩ
10kΩ
27kΩ
56kΩ
Normalized input current to trigger I FT
0.2
0.4
1
2
4
10
20
40
100
0.1
0.4
1
2
4
10
4
6
8
10
12
14
0
16
18
20
22
24
2
VAK = 50V
ton = td + tr
tr = 1µs
RGK=1kΩ
10kΩ
56kΩ
0.2
0.4
1
2
4
10
20
40
100
100°C -55°C
25°C
5/12/00
DB92010-AAS/A4
0 1 2 3 4
On state voltage VT ( V )
Maximum Transient Thermal Impedence
0 0.2 0.4 0.6 0.8 1.0
On state current ( Α )
On state current I T (A)
On State Characteristics
Normalized forward current off state ( I D )
25 50 75 100
Critical rate of rise applied forward voltage dV/dt (V/
µ
s)
dV/dt vs. Ambient temperature
Holding Current vs. Ambient
Temperature
Holding current IH (
µ
A)
10
Normalized to
VAK = 50V
RGK =10kΩ
TA = 25 °C
RGK =300Ω
10kΩ
27kΩ
56kΩ
1kΩ
0.001 0.01 0.1 1 2 4 10 100
Time (seconds)
Transient thermal impedance ( °C / Watt )
Off State Forward Current vs.
Ambient Temperature
Ambient temperature TA ( °C )
0 25 50 75 100
Normalized to
VAK = 50V
TA = 25 °C
On State Current vs. Maximum
Allowable Temperature
Maximum allowable temperature ( °C )
10
100
0
1
2
4
10
20
40
100
200
400
2000
1000
4000
10000
-60 -40 -20 0 20 40 60 80 100 120
Ambient temperature TA ( °C )
1. Lead temperature measured at the
widest portion of the SCR anode lead.
2. Ambient temperature measured at
a point 1/2" from the device.
Junction to lead
Junction to ambient
1
2
4
10
20
40
100
200
400
1000
VAK = 400V
VAK = 50V
20
40
100
200
400
1000
4000
10000
2000
VAK = 200V
1. Ambient temp. half-sine wave avg
2. Ambient temp. DC current
3. Anode lead temp. half-sine wave avg
4. Anode lead temp. DC current
1. 2. 4.3.
20
30
40
50
60
70
80
90
RGK =300Ω
10kΩ
27kΩ
56kΩ
1kΩ
0.1
1
10
40
100
4
0.4
400
1000
Ambient temperature TA ( °C )
Junction temperature = 25°C
Junction temperature = 100°C
Increases to forward
breakover voltage
0.01
0.02
0.04
0.1
0.2
0.4
1
2
5/12/00
