FTD2017R
No. A0472-1/4
Features
•Low ON-resistance.
•2.5V drive.
•Mount height 1.1mm.
•Composite type, facilitating high-density mounting.
•Drain common specifications.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGSS ±12 V
Drain Current (DC) ID6A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 40 A
Allowable Power Dissipation PD
Mounted on a ceramic board (1000mm
2
✕0.8mm)1unit
1.2 W
Total Dissipation PTMounted on a ceramic board (1000mm2✕0.8mm) 1.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 20 V
Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS= ±8V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.5 1.3 V
Forward T ransfer Admittance yfsVDS=10V, ID=6A 6.9 11.5 S
RDS(on)1 ID=6A, VGS=4.5V 11 17 23 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=6A, VGS=4V 12 18 24 mΩ
RDS(on)3 ID=3A, VGS=3.1V 14 19 30 mΩ
RDS(on)4 ID=3A, VGS=2.5V 14.4 20 33 mΩ
Marking : D2017R Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0472
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
N1506PA TI IM TC-00000296
SANYO Semiconductors
DATA SHEET
FTD2017R N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
FTD2017R
No. A0472-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Turn-ON Delay T ime td(on) See specified Test Circuit. 960 ns
Rise T ime trSee specified Test Circuit. 2700 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 5500 ns
Fall T ime tfSee specified Test Circuit. 5400 ns
Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=6A 10 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4.5V, ID=6A 1 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4.5V, ID=6A 4 nC
Diode Forward Voltage VSD IS=6A, VGS=0V 0.83 1.2 V
Package Dimensions Electrical Connection
unit : mm (typ)
7006A-005
Switching Time Test Circuit
1 : Drain
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain
SANYO : TSSOP8
6.4
3.0
0.65
4.5 0.95
0.95
0.5
0.125
85
14
0.25
0.425
0.05 1.0
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=5A
RL=2Ω
VDD=10V
VOUT
FTD2017R
VIN
4.5V
0V
VIN
Rg
Rg=2.4kΩ
8765
1234
1 : Drain
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain
Top view
FTD2017R
No. A0472-3/4
RDS(on) -- VGS RDS(on) -- Tc
ID -- VDS ID -- VGS
IS -- VSD
y
fs -- ID
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C
Forward T ransfer Admittance,
y
fs -- S Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
IT11323
0.1
523 57 23 57
1.0
10000
7
5
3
2
1000
7
2
10
td(on)
td(off)
tr
tf
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
IT11788
IT11785
--100 --50 200
IT11790
IT11789
0.01 0.1
23 57
3
0.1
1.0
71.21.00.80.40.2 0.60
0.1
2
1.0
5
7
3
2
5
7
3
10
7
5
2
2
3
2
3
10
7
5
21.0
357 2 10
357
050100 150
Tc=
--25
°C
25
°
C
75°
C
VDS=10V
Tc=
75°
C
25°
C
--
25
°
C
VGS=0V
0.05 0.10 0.15 0.20 0.25 0.30 0.400.350
0
1
6
4
3
5
2
0
5
10
50
30
25
20
40
35
45
15
IT11787
02468 1210 0
5
10
40
25
20
15
30
35
IT11786
0.5 1.5 2.01.0 2.50
0
1
3
2
10
7
6
5
8
9
4
VGS=1.5V
10V
2.5V
VDS=6V
--25
°
C
25°
C
Ta=7
5
°
C
ID=
3A, VGS=2.5V
ID=3A, VGS=3.1V
ID=6A, VGS=4.0V
ID=
6
A,
VGS=4.5V
7.5V 4.5V 4.0V
3.1V
Ta=25°C
3A
ID=6A
IT11791
02 8610417593
0
2
4
6
1
3
5
8
7
9
10 VDS=10V
ID=6A
FTD2017R
No. A0472-4/4PS
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
1.0
10
100
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
IT11852
0.01 23 57 1.0 10
0.1 23 57 2357 23
ID=6A
Operation in this area
is limited by RDS(on).
10ms
100ms
1ms
100
µ
s
IDP=40A
DC operation
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.2
0.4
0.6
20 40 60 80 100 120
0.8
1.0
1.2
1.25
1.4
140 160
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
IT11853
IT11854
1unit
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
≤10µs
Ta=25°C
Single pulse
Mounted on a ceramic board (1000mm
2
✕0.8mm) 1unit
Ambient Temperature, Ta -- °C
PD -- Ta
PD(FET1) -- PD(FET2)
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation(FET2), PD -- W
Allowable Power Dissipation(FET1), PD -- W
Total dissipation
Mounted on a ceramic board (1000mm
2
✕0.8mm)
Mounted on a ceramic board (1000mm
2
✕0.8mm)
Note on usage : Since the FTD2017R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
