TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS Designed for Complementary Use with TIP110, TIP111 and TIP112 TO-220 PACKAGE (TOP VIEW) 50 W at 25C Case Temperature 4 A Continuous Collector Current B 1 Minimum hFE of 500 at 4V, 2 A C 2 E 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) TIP116 V CBO E T E L O S B O TIP117 TIP115 Collector-emitter voltage (IB = 0) TIP116 V CEO TIP117 Emitter-base voltage VALUE UNIT -60 TIP115 -80 V -100 -60 -80 V -100 VEBO -5 V IC -4 A ICM -6 A IB -50 mA Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 50 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 2 W 1/2LIC2 25 mJ Tj -65 to +150 C Tstg -65 to +150 C TL 260 C Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.4 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 , V BE(off) = 0, RS = 0.1 , VCC = -20 V. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE VEC Collector-emitter breakdown voltage TEST CONDITIONS MIN TIP115 IC = -30 mA IB = 0 (see Note 5) TYP MAX TIP116 -80 TIP117 -100 V VCE = -30 V IB = 0 TIP115 -2 VCE = -40 V IB = 0 TIP116 -2 VCE = -50 V IB = 0 TIP117 -2 VCB = -60 V IE = 0 TIP115 -1 VCB = -80 V IE = 0 TIP116 -1 VCB = -100 V IE = 0 TIP117 -1 VEB = -5 V IC = 0 Forward current VCE = -4 V IC = -1 A transfer ratio VCE = -4 V IC = -2 A -8 mA IC = -2 A Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage IB = UNIT -60 mA mA -2 mA -2.5 V 1000 (see Notes 5 and 6) 500 (see Notes 5 and 6) E T E L O S B O VCE = -4 V IC = -2 A (see Notes 5 and 6) -2.8 V IE = -5 A IB = 0 (see Notes 5 and 6) -3.5 V MAX UNIT NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25C case temperature PARAMETER ton Turn-on time toff Turn-off time TEST CONDITIONS MIN IB(on) = -8 mA IB(off) = 8 mA 2.6 s VBE(off) = 5 V RL = 15 tp = 20 s, dc 2% 4.5 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP IC = -2 A DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS115AA 20000 TC = -40C TC = 25C TC = 100C 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 1000 -1*0 tp = 300 s, duty cycle < 2% IB = IC / 100 -1*5 -1*0 -0*5 E T E L O S B O VCE = -4 V tp = 300 s, duty cycle < 2% 100 -0*5 TCS115AB -2*0 -5*0 0 -0*5 IC - Collector Current - A -1*0 TC = -40C TC = 25C TC = 100C -5*0 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS115AC VBE(sat) - Base-Emitter Saturation Voltage - V -3*0 -2*5 TC = -40C TC = 25C TC = 100C -2*0 -1*5 -1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% -0*5 -0*5 -1*0 -5*0 IC - Collector Current - A Figure 3. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -10 SAS115AA -1*0 -0*1 E T E L O S B O TIP115 TIP116 TIP117 -0.01 -1*0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS110AA Ptot - Maximum Power Dissipation - W 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.