R07DS0016EJ0100 Rev.1.00 Page 1 of 6
Jul 01, 2010
Preliminary Data Sheet
NP35N04YUG
MOS FIELD EFFECT TRANSISTOR
Description
The NP35N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 17.5 A)
• Low Ciss: Ciss = 1900 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON
Ordering Information
Part No. LEAD PLATING PACKING Package
NP35N04YUG -E1-AY ∗1 8-pin HSON, Taping (E1 type)
NP35N04YUG -E2-AY ∗1
Pure Sn (Tin) Tape 2500 p/reel
8-pin HSON, Taping (E2 type)
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Item Symbol Ratings Unit
Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±35 A
Drain Current (pulse) ∗1 I
D(pulse) ±105 A
Total Power Dissipation (TC = 25°C) PT1 77 W
Total Power Dissipation (TA = 25°C) ∗2 P
T2 1.0 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg −55 to +175 °C
Repetitive Avalanche Current ∗3 I
AR 22 A
Repetitive Avalanche Energy ∗3 E
AR 48 mJ
Thermal Resistance
Channel to Case Thermal Resistance Rth(ch-C) 1.95 °C/W
Channel to Ambient Thermal Resistance ∗2 R
th(ch-A) 150 °C/W
Notes: ∗1. TC = 25°C, PW ≤ 10
μ
s, Duty Cycle ≤ 1%
∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
*3. Tch(peak) ≤ 150°C, RG = 25 Ω
R07DS0016EJ0100
Rev.1.00
Jul 01, 2010
NP35N04YUG Chapter Title
R07DS0016EJ0100 Rev.1.00 Page 2 of 6
Jul 01, 2010
Electrical Characteristics (TA = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero Gate Voltage Drain Current IDSS 1
μ
A VDS = 40 V, VGS = 0 V
Gate Leakage Current IGSS ±100 nA VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage V
GS(th) 2.0 3.0 4.0 V VDS = VGS, ID = 250
μ
A
Forward Transfer Admittance ∗1 | yfs | 8.0 16 S VDS = 5 V, ID = 17.5 A
Drain to Source On-state
Resistance ∗1
RDS(on) 7.9 10 mΩ V
GS = 10 V, ID = 17.5 A
Input Capacitance Ciss 1900 2850 pF VDS = 25 V,
Output Capacitance Coss 190 290 pF VGS = 0 V,
Reverse Transfer Capacitance Crss 120 220 pF f = 1 MHz
Turn-on Delay Time td(on) 18 36 ns VDD = 20 V, ID = 17.5 A,
Rise Time tr 10 25 ns VGS = 10 V,
Turn-off Delay Time td(off) 38 76 ns RG = 0 Ω
Fall Time tf 5 13 ns
Total Gate Charge QG 36 54 nC
Gate to Source Charge QGS 10 nC
Gate to Drain Charge QGD 12 nC
VDD = 32 V,
VGS = 10 V,
ID = 35 A
Body Diode Forward Voltage ∗1 V
F(S-D) 0.9 1.5 V IF = 35 A, VGS = 0 V
Reverse Recovery Time trr 31 ns
Reverse Recovery Charge Qrr 30 nC
IF = 35 A, VGS = 0 V,
di/dt = 100 A/
μ
s
Note: ∗1. Pulsed
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20 → 0 V
PG.
R
G
= 25 Ω
50 Ω
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1 s
Duty Cycle ≤ 1%
τμ
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10% 10%
NP35N04YUG Chapter Title
R07DS0016EJ0100 Rev.1.00 Page 3 of 6
Jul 01, 2010
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
PT - Total Power Dissipation - W
0
10
20
30
40
50
60
70
80
90
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
0.1
1
10
100
1000
0.1 1 10 100
I
D(pulse)
T
C
= 25C
Single Pulse
Power Dissipation Limited
1
1
m
1
s
1
1
0 m
1
s
R
DS(on)
Lim
1
ited
(V
GS
= 1
1
0 V)
PW = 1
1
00 μs
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
0.01
0.1
1
10
100
1000
R
th(ch-A)
: 150°C/W
R
th(ch-C)
: 1.95°C/W
Single pulse
Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
PW - Pulse Width - s
100
μ
1 m 10 m 100 m 1 10 100 1000
NP35N04YUG Chapter Title
R07DS0016EJ0100 Rev.1.00 Page 4 of 6
Jul 01, 2010
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
0
10
20
30
40
50
60
70
80
90
100
110
120
00.511.5
V
GS
= 10 V
Pulsed
VDS - Drain to Source Voltage - V
ID - Drain Current - A
0.001
0.01
0.1
1
10
100
234567
V
DS
= 10 V
Pulsed
T
A
= −55°C
25°C
75°C
125°C
175°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
VGS(th) - Gate to Source Threshold Voltage - V
0
0.5
1
1.5
2
2.5
3
3.5
4
-100 0 100 200
V
DS
= V
GS
I
D
= 250
μ
A
Tch - Channel Temperature - °C
| yfs | - Forward Transfer Admittance - S
1
10
100
0.1 1 10 100
V
DS
= 5 V
Pulsed
Ta =
−
55
°
C
25
°
C
75
°
C
125
°
C
175
°
C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
5
10
15
20
0.1 1 10 100 1000
V
GS
= 10 V
Pulsed
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
0
5
10
15
20
0 5 10 15 20
Pulsed
I
D
= 35A
17.5 A
7 A
VGS - Gate to Source Voltage - V
NP35N04YUG Chapter Title
R07DS0016EJ0100 Rev.1.00 Page 5 of 6
Jul 01, 2010
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
5
10
15
20
25
-100 0 100 200
V
GS
= 10 V
I
D
= 17.5 A
Pulsed
Tch - Channel Temperature - °C
Ciss, Coss, Crss - Capacitance - pF
10
100
1000
10000
0.1 1 10 100
C
iss
C
oss
C
rss
V
GS
= 0 V
f = 1MHz
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
1
10
100
1000
0.1 1 10 100
V
DD
= 20 V
V
GS
= 10 V
R
G
= 0
Ω
t
d(off)
t
d(on)
t
r
t
f
ID - Drain Current - A
VDS - Drain to Source Voltage - V
0
5
10
15
20
25
30
35
40
0 10203040
0
2
4
6
8
10
12
V
DS
V
GS
I
D
= 35 A
V
DD
= 32 V
20 V
8 V
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Diode Forward Current - A
0.1
1
10
100
1000
00.511.5
0 V
V
GS
= 10 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
trr - Reverse Recovery Time - ns
1
10
100
0.1 1 10 100
di/dt = 100 A/
μ
s
V
GS
= 0 V
IF - Drain Current - A
NP35N04YUG Chapter Title
R07DS0016EJ0100 Rev.1.00 Page 6 of 6
Jul 01, 2010
Package Drawings (Unit: mm)
8-pin HSON (Mass: 0.13 g TYP.)
1
2
3
4
7
8
6
5
1.27
5.0 ±0.2
5.15 ±0.2
6.0 ±0.2
3.18 ±0.2
0.8 ±0.15
0.6 ±0.15
0.42
−0.05
+0.1
0.10 M
0.10 S
0
−0
+0.05
0.42 ±0.05
1.45 MAX.
3.8 ±0.2
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
5.4 ±0.2
0.73
0.4
Equivalent Circuit
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History NP35N04YUG
Description
Rev. Date
Page Summary
1.00 Jul 01, 2010 − First Eddition Issued
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