BU208D
BU508DFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
■STMicroelectronicsPREFERRED
SALESTYPES
■HIGH VOLTAGECAPABILITY
■U.L.RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734(N)
■JEDEC TO-3METAL CASE
■NPNTRANSISTOR WITH INTEGRATED
FREEWHEELINGDIODE
APPLICATIONS:
■HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208D and BU508DFI are manufactured
using Multiepitaxial Mesa technology for
cost-effectivehigh performance and use a Hollow
Emitter structure to enhance switching speeds. INTERNAL SCHEMATIC DIAGRAM
November 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1500 V
VCEO Collector-Emitter Voltage (IB=0) 700 V
V
EBO Emitter-Base Voltage (IC=0) 10 V
I
CCollector Current 8 A
ICM Collector Peak Current (tp<5ms) 15 A
TO - 3 ISOWATT218
Ptot Total Dissipation at Tc=25o
C 150 50 W
Tstg Storage Temperature -65 to 175 -65 to 150 oC
TjMax. Operating Junction Temperature 175 150 oC
TO-3 ISOWATT218
123
12
For TO-3 :
C =Tab
E = Pin2.
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THERMAL DATA
TO-3 ISOWATT218
Rthj-case Thermal Resistance Junction-case Max 1 2.5 oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0) V
CE = 1500 V
VCE = 1500 V Tj=125o
C1
2mA
mA
IEBO Emitter Cut-off Current
(IC=0) V
EB =5V 300 mA
V
CEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB=0)
I
C= 100 m A 700 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC=4.5A I
B=2A 1 V
V
BE(sat)∗Base-Emitter
Saturation Voltage IC=4.5A I
B=2A 1.3 V
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
IC=4.5A h
FE =2.5 V
CC =140V
L
C=0.9mH L
B=3µH7
550 µs
ns
VFDiode Forward Voltage IF=4A 2 V
f
TTransition Frequency IC=0.1A V
CE = 5 V f = 5 MHz 7 MHz
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area(TO-3) Safe OperatingArea (ISOWATT218)
BU208D / BU508DFI
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DCCurrent Gain
Base Emitter SaturationVoltage
SwitchingTime InductiveLoad (seefigure 1)
Collector EmitterSaturation Voltage
Switching Time InductiveLoad
Switching Time Percentancevs. Case
BU208D / BU508DFI
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Figure1: InductiveLoad Switching TestCircuit.
BU208D / BU508DFI
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
E
B
R
C
DA
P
G
N
V
U
O
P003F
TO-3 MECHANICAL DATA
BU208D / BU508DFI
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
P025C/A
ISOWATT218MECHANICAL DATA
- Weight: 4.9g (typ.)
- MaximumTorque (applied to mountingflange) Recommended: 0.8 Nm; Maximum:1 Nm
- Theside of thedissipator must beflat within 80 µm
BU208D / BU508DFI
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1999 STMicroelectronics – Printed in Italy – AllRights Reserved
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BU208D / BU508DFI
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