Silicon Schottky Detector Diodes 120 __J 276 Description This family of low capacitance Schottky diodes is designed to give superior performance in video detectors and power monitors from 100 MHz through 40 GHz. They have low junction capacitance and repeatable video impedance. These diodes are available in a wide range of ceramic, stripline and axial lead packages and as bondable chips. Both P and N type diodes are offered. Case Styles L. thy 54 Features M WIDE SELECTION OF PACKAGES FOR STRIPLINE, COAXIAL AND WAVEGUIDE DETECTORS @ CHIP DIODES AVAILABLE @ BOTH P AND N TYPE DIODES M@ EXCELLENT SENSITIVITY THROUGH Ka-BAND M@ LOW 1/f NOISE Applications Detectors and power monitors in stripline, coaxial and waveguide circuits through 40 GHz. -| CATHODE 3 119 135A M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 w 800-366-2266 243Chip and Packaged Silicon Schottky Dectector Diodes Packaged N Type Silicon Schottky Detector Diodes These low barrier packaged detector diodes are suitable for use in stripline, waveguide and coaxial detectors. They feature high sensitivity and low I/f noise. These diodes are Specifications @ Ta = 25C listed by increasing test frequency, grouped by packaged style and decreasing Tss. Other case styles than those specified are available upon request. Minimum? Video Impedance? Tang. Sig. Range Test Frequency Sens. Tss Min./Max. Model Number' Case Style (GHz) (dBm) (K Ohms) MA40041 3 3.0 -55 1-2 MA40040 3 3.0 -50 1-2 MA40053 54 3.0 ~5 1-2 MA40052 54 3.0 - 50 1-2 MA40064 119 3.0 55 1-2 MA40063 119 3.0 - 50 1-2 MA40043 3 10.0 52 1-2 MA40042 3 10.0 -50 1-2 MA40202 54 10.0 -55 1-2 MA40204 54 10.0 ~52 1-2 MA40072 54 10.0 ~50 1-2 MA40201 119 10.0 -55 1-2 MA40203 119 10.0 -52 1-2 MA40065 119 10.0 -50 1-2 MA40207 120 10.0 -55 1-2 MA40208 120 10.0 -52 1-2 MA40205 119 16.0 ~52 1-2 MA40206 119 16.0 -50 1-2 MA40215 120 16.0 -52 1-2 MA40216 120 16.0 - 50 1-2 MA40267 119 36.0 -49 1-2 MA40268 120 36.0 - 49 1-2 NOTES 1. Schottky barrier junction diodes are thermocompression bonded in case style 119 and 120. Case styles 3 and 54 use pressure contacts. The standard case style is given for aach model number. Other case styles are available upon request. For additional information, contact the factory. MAXIMUM RATINGS 2. The video amplifier bandwidth is 2 MHz and the nominal amplifier noise figure is 3 dB. DC impedance is 10 K ohms. The dc bias is 20 pA. 3. RF Power = -30 dBM. The dc forward bias is +20 pA. 4. Measured at the indicated test frequency and at 30 d8m RF power with RAL~ 10K ohms and DC forward bias = 20,4. TEMPERATURE RATINGS Storage Operating Temperature POWER RATINGS at 25C Maximum Peak Incident RF Power - 65C to + 150C S-X Band 1 Watt-1 microsecond maximum pulse length Ku-K Band .5W-1 microsecond maximum pulse length S-X Band 150 mW (maximum) Ku-K band 100 mW (maximum) Maximum CW RF Power Derate Linearly to Zero at 150C SOLDER TEMPERATURE RATINGS For case styles 54, 276, 186 For case style 120 230C for 5 seconds, 1 mm from package 200C for 5 seconds M/A-COM, Inc. a 244 43 South Ave, Burlington, MA 01803 a 800-366-2266Chip and Packaged Silicon Schottky Dectector Diodes Packaged P Type Silicon Schottky Detector Diodes This series of low barrier P type detector diodes is suitable noise than N type diodes. They are listed by test frequency, for use in waveguide, coaxial and stripline circuits. Each case style and descending Tss. These diodes are most diode in this family features high sensitivity and lower 1/f appropriate for detectors with low video amplifier frequency. Specifications @ Ta = 25C Minimum! Video impedance Tang. Sig. Range Minimum Test Frequency Sens. Tsg Min./Max. Sensitivity Mode! Number Case Style (GHz) (dBm) (Ohms) (mV/mW) MA40252 54 10.0 ~55 1.2-1.8 5000 MA40254 54 10.0 -52 1.2-1.8 3500 MA40251 119 10.0 - 55 1.2-1.8 5000 MA40253 119 10.0 -52 1.2-1.8 3500 MA40257 120 10.0 -55 1.2-1.8 5000 MA40258 120 10.0 -52 1.2-1.8 3500 MA40257-276 276 10.0 -55 1.2-1.8 5000 MA40258-276 276 10.0 -52 1.2-1.8 3500 MA40255 119 16.0 -52 1.2-1.8 3500 MA40256 119 16.0 -50 1.2-1.8 3000 MA40265 120 16.0 ~-52 1.2-1.8 3500 MA40266 120 16.0 ~50 1.2-1.8 3000 MA40265-276 276 16.0 -52 1.2-1.8 3500 MA40266-276 276 16.0 ~50 1.2-1.8 3000 P Type Silicon Schottky Chip Detector Diodes These low barrier P type chip detector diodes are suitable for use in microstrip or stripline circuits. These diodes are listed by increasing test frequency. Specifications @ Ty, = 25C Voltage? Nominal Nominai* Test Breakdown Nominal! Forward Total Model Case Frequency Vb Tss Voltage Capacitance Number Style (GHz) (Volts) (dBM) (Volts) (pF) MA40270 135A 10.0 4.0 -52 0.4 0.12 MA40272 135A 16.0 4.0 -52 0.4 0.09 NOTES: 1. The video amplifier bandwidth is 2 MHz and the noise figure is 3 dB. Impedance is 10 Kilohms and dc bias is +20 pA. 2. Breakdown voltage is measured at 10 vA reverse bias current. 3. Forward voltage is measured at a forward current of 1 mA. 4. Capacitance is measured at 0 volts and 1 MHz. 5. RF power = ~30 dBm. The DC forward bias is +20 pA. 6. Measured at the indicated test frequency and at -30 dBm RF power with A - 10 K ohms and DC forward bias +20 yA. M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 245Chip and Packaged Silicon Schottky Detector Diodes N Type Silicon Schottky Detector Diodes These low barrier packaged detector diodes are suitable for use in stripline applications. They feature high sensitivity, and low I/f noise. These diodes are listed by increasing frequency, and grouped by package style and Tss. Case styles other than those specified are available on request for a nominal charge. For addtional information, contact the factory. Minimum? Video Impedance?* Tang. Sig. Range Test Frequency Sens. Tss Min./Max. Model Number Case Style (GHz) (dBm) (K Ohms) MA40069 137 3.0 ~55 1-2 MA40067 137 3.0 -50 1-2 MA40261 186 3.0 -55 1-2 MA40260 186 3.0 - 50 1-2 MA40144 213 3.0 -55 1-2 MA40143 213 3.0 - 50 1-2 MA40114 137 10.0 - 55 1-2 MA40108 137 10.0 - 52 1-2 MA40070 137 10.0 -50 1-2 MA40264 186 10.0 ~55 1-2 MA40263 186 10.0 -52 1-2 MA40262 186 10.0 -50 1-2 MA40147 213 10.0 ~55 1-2 MA40146 213 10.0 -52 1-2 MA40145 213 10.0 - 50 1-2 MA40207-276 276 10.0 - 55 1-2 MA40208-276 276 10.0 -52 1-2 MA40118 137 16.0 48 1-2 MA40149 213 16.0 ~ 50 1-2 MA40148 213 16.0 - 48 1-2 MA40215-276 276 16.0 -52 1-2 MA40216-276 276 16.0 - 50 1-2 NOTES 1. This series of Schottky barrier junction diodes are thermocompression bonded. The input impedance is 10 Kahms and dc bias is 20 yA. 3. Pinc = -30 dBM. The dc forward bias is +20 pA. 2. The video amplifier bandwidth is 2 MHz and the noise figure is 3 dB. N Type Silicon Schottky Chip Detector Diodes These low barrier N type detector diodes are suitable for use in stripline applications. They feature sensitivity, and low I/f noise. These diodes are listed by increasing frequency, and grouped according to case style and Tss. Other case styles are available upon request at a nominal charge. For additional information, contact the factory. Voltage? Nominal* Nominal* Test Minimum! Breakdown Forward Total Model Case Frequency Tss Vb Voltage Capacitance Number Style (GHz) (dBM) (Volts) (Volts) (pF) MA40220 135 10.0 -52 2.0 0.3 0.12 MA40222 135 16.0 -52 2.0 0.3 0.09 NOTES: 1. The video amplifier bandwidth is 2 MHz and the noise figure is 3 dB. impedance is 10 kilohms and dc bias is +20 yA. Wafers are evaluated on a sample basis for Tg. 2. Breakdown voltage is measured at 10 yA reverse bias current. 3. Forward voltage is measured at a forward current of 1 mA. 4, Capacitance is measured at 0 volts and 1 MHz. M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 246Chip and Packaged Silicon Schottky Detector Diodes Typical Performance Curves 1,000 10,000 34 > 1,000 = E o 3 < < 5 Hy 10.0 oO $ $ bE ke 2 z =10 & 5 Lo , a1 FREQ. = 9.375 GHz 31 FREQ, = 9.375 GHz Ip = 20 uA [pt Qua HOLDER = JD2078 HOLDER = JD2078 (502 7MM AIR LINE} (5092 7MM AIR LINE) 04 1 NO TUNING 50 45 40 35 30 25 20 -15 10 5 40 -35 -30 25 -20 -15~10 -5 0 5 10 INPUT POWER (dBm) INPUT POWER (dBm) FIGURE 1. MA40250 Series Nominal Output Voltage at FIGURE 2. MA40250 Series Nominai Output Voltage at X-band (with Forward Bias) X-band (with Zero Bias) 60 - PS 55 I BW = 2 MHz INN p 20 uA TANGENTIAL SIGNAL SENSITIVITY (dBm) > a 4 6 8 10 #12 14 WG 18 20 FREQUENCY (GHz) FIGURE 3. MA40250 Series Nominal Tangential Signal Sensitivity vs. Frequency 100 BW = MHz FREQ. = 9.375 GHz 10K IZED TUN VIDEO IMPEDANCE (OHMS) s z (25> 50 TANGENTIAL SIGNAL SENSITIVITY (dBm) 0 10 20 30 40 50 60 70 80 90 100 1 10 100 1000 BIAS CURRENT (uA) BIAS CURRENT (uA) FIGURE 4. MA40250 Series Nominal Tangential Signal FIGURE 5. MA40250 Nominal Video Impedance vs. Sensitivity vs. Bias Current at X-band Bias Current M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 247